CET CEB62A3 N-channel logic level enhancement mode field effect transistor Datasheet

CEP62A3/CEB62A3
Feb. 2003
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
D
30V , 60A , RDS(ON)=10mΩ @VGS=10V.
RDS(ON)=15m Ω @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
G
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
S
CEP SERIES
TO-220
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
Ć20
V
ID
60
A
-Pulsed
IDM
180
A
Drain-Source Diode Forward Current
IS
60
A
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
PD
68
0.45
W
W/ C
Drain Current-Continuous
Operating and Storage Temperature Range
TJ, TSTG
-55 to 175
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
RįJC
2.2
C/W
Thermal Resistance, Junction-to-Ambient
RįJA
62.5
C/W
4-177
44
CEP62A3/CEB62A3
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
4
Parameter
Symbol
Condition
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
VDS = 30V, VGS = 0V
Gate-Body Leakage
IGSS
VGS = Ć20V, VDS = 0V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
Drain-Source On-State Resistance
RDS(ON)
Min Typ Max Unit
OFF CHARACTERISTICS
30
V
1
µA
Ć100
nA
3
V
ON CHARACTERISTICS a
ID(ON)
gFS
On-State Drain Current
Forward Transconductance
1
VGS = 10V, ID = 26A
8.5
10
mΩ
VGS = 4.5V, ID = 21A
12
15
mΩ
VGS = 10V, VDS = 5V
VDS = 10V, ID = 26A
60
A
36
S
1100
PF
600
PF
180
PF
DYNAMIC CHARACTERISTICSb
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDS =15V, VGS = 0V
f =1.0MHZ
b
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDD = 15V,
ID =60A,
VGEN = 10V
RG =24Ω
VDS =15V, ID = 30A,
VGS =10V
4-178
19
48
ns
36
72
ns
97
175
ns
68
135
ns
35
42
nC
6
nC
11
nC
CEP62A3/CEB62A3
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Min Typ Max Unit
Condition
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
VGS = 0V, Is =26A
VSD
1.3
Notes
a.Pulse Test:Pulse Width ś300ijs, Duty Cycle ś 2%.
b.Guaranteed by design, not subject to production testing.
60
60
VGS=10,8,6,4V
50
ID, Drain Current (A)
ID, Drain Current(A)
50
40
30
VGS=3V
20
10
40
30
-55 C
20
25 C
10
Tj=125 C
0
0
2
1
0
4
3
1
5
2
VDS, Drain-to-Source Voltage (V)
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
1800
C, Capacitance (pF)
1500
Ciss
900
Coss
600
300
Crss
0
0
5
10
15
20
25
4
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
3
30
2.2
1.9
ID=26A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
TJ, Junction Temperature( C)
VDS, Drain-to Source Voltage (V)
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Capacitance
4-179
V
4
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.30
VDS=VGS
ID=250ijA
1.20
1.10
1.00
0.90
0.80
0.70
0.60
-50 -25
0
25 50
75 100 125 150
1.15
ID=250ijA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
25
50
75 100 125 150
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
50
50
40
Is, Source-drain current (A)
gFS, Transconductance (S)
0
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
30
20
10
VDS=10V
10
1.0
0.1
0
0
10
20
30
40
0.4
IDS, Drain-Source Current (A)
10
0.6
0.8
1.2
1.0
1.4
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
Figure 8. Body Diode Forward Voltage
Variation with Source Current
VDS=15V
ID=30A
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
4
Vth, Normalized
Gate-Source Threshold Voltage
CEP62A3/CEB62A3
6
4
2
10 2
R
10 0
10
0
10
20
30
40
Qg, Total Gate Charge (nC)
N)
Lim
10
it
10
1m
0ij
s
s
m
10
s
DC 0ms
10 1
-1
0
(O
DS
TC=25 C
Tj=175 C
Single Pulse
10 -1
10 0
10 1
10
VDS, Drain-Source Voltage (V)
Figure 10. Maximum Safe
Operating Area
Figure 9. Gate Charge
4-180
2
CEP62A3/CEB62A3
4
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 12. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 11. Switching Test Circuit
10 0
D=0.5
0.2
10
-1
PDM
0.1
t1
0.05
t2
0.02
0.01
1. RįJC (t)=r (t) * RįJC
2. RįJC=See Datasheet
3. TJM-TC = P* RįJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10 -2 -2
10
10 -1
10 0
10 1
10 2
10 3
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
4-181
10
4
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