CEP62A3/CEB62A3 Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 30V , 60A , RDS(ON)=10mΩ @VGS=10V. RDS(ON)=15m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G D G S CEB SERIES TO-263(DD-PAK) G D S S CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS Ć20 V ID 60 A -Pulsed IDM 180 A Drain-Source Diode Forward Current IS 60 A Maximum Power Dissipation @Tc=25 C Derate above 25 C PD 68 0.45 W W/ C Drain Current-Continuous Operating and Storage Temperature Range TJ, TSTG -55 to 175 C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case RįJC 2.2 C/W Thermal Resistance, Junction-to-Ambient RįJA 62.5 C/W 4-177 44 CEP62A3/CEB62A3 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) 4 Parameter Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS VDS = 30V, VGS = 0V Gate-Body Leakage IGSS VGS = Ć20V, VDS = 0V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA Drain-Source On-State Resistance RDS(ON) Min Typ Max Unit OFF CHARACTERISTICS 30 V 1 µA Ć100 nA 3 V ON CHARACTERISTICS a ID(ON) gFS On-State Drain Current Forward Transconductance 1 VGS = 10V, ID = 26A 8.5 10 mΩ VGS = 4.5V, ID = 21A 12 15 mΩ VGS = 10V, VDS = 5V VDS = 10V, ID = 26A 60 A 36 S 1100 PF 600 PF 180 PF DYNAMIC CHARACTERISTICSb Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =15V, VGS = 0V f =1.0MHZ b SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD = 15V, ID =60A, VGEN = 10V RG =24Ω VDS =15V, ID = 30A, VGS =10V 4-178 19 48 ns 36 72 ns 97 175 ns 68 135 ns 35 42 nC 6 nC 11 nC CEP62A3/CEB62A3 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Min Typ Max Unit Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS a Diode Forward Voltage VGS = 0V, Is =26A VSD 1.3 Notes a.Pulse Test:Pulse Width ś300ijs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing. 60 60 VGS=10,8,6,4V 50 ID, Drain Current (A) ID, Drain Current(A) 50 40 30 VGS=3V 20 10 40 30 -55 C 20 25 C 10 Tj=125 C 0 0 2 1 0 4 3 1 5 2 VDS, Drain-to-Source Voltage (V) Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 1800 C, Capacitance (pF) 1500 Ciss 900 Coss 600 300 Crss 0 0 5 10 15 20 25 4 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 1200 3 30 2.2 1.9 ID=26A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 TJ, Junction Temperature( C) VDS, Drain-to Source Voltage (V) Figure 4. On-Resistance Variation with Temperature Figure 3. Capacitance 4-179 V 4 BVDSS, Normalized Drain-Source Breakdown Voltage 1.30 VDS=VGS ID=250ijA 1.20 1.10 1.00 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 1.15 ID=250ijA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 25 50 75 100 125 150 Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature 50 50 40 Is, Source-drain current (A) gFS, Transconductance (S) 0 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) 30 20 10 VDS=10V 10 1.0 0.1 0 0 10 20 30 40 0.4 IDS, Drain-Source Current (A) 10 0.6 0.8 1.2 1.0 1.4 VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current Figure 8. Body Diode Forward Voltage Variation with Source Current VDS=15V ID=30A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) 4 Vth, Normalized Gate-Source Threshold Voltage CEP62A3/CEB62A3 6 4 2 10 2 R 10 0 10 0 10 20 30 40 Qg, Total Gate Charge (nC) N) Lim 10 it 10 1m 0ij s s m 10 s DC 0ms 10 1 -1 0 (O DS TC=25 C Tj=175 C Single Pulse 10 -1 10 0 10 1 10 VDS, Drain-Source Voltage (V) Figure 10. Maximum Safe Operating Area Figure 9. Gate Charge 4-180 2 CEP62A3/CEB62A3 4 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 12. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 11. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 t2 0.02 0.01 1. RįJC (t)=r (t) * RįJC 2. RįJC=See Datasheet 3. TJM-TC = P* RįJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -2 -2 10 10 -1 10 0 10 1 10 2 10 3 Square Wave Pulse Duration (msec) Figure 13. Normalized Thermal Transient Impedance Curve 4-181 10 4