MOTOROLA MMJT9410 Bipolar power transistor Datasheet

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by MMJT9410/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
NPN Silicon
• Collector –Emitter Sustaining Voltage — VCEO(sus)
= 30 Vdc (Min) @ IC = 10 mAdc
POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
VCE(sat) = 0.2 VOLTS
• High DC Current Gain — hFE
= 85 (Min) @ IC = 1.0 Adc
= 60 (Min) @ IC = 3.0 Adc
• Low Collector –Emitter Saturation Voltage — VCE(sat)
= 0.2 Vdc (Max) @ IC = 1.2 Adc
= 0.55 Vdc (Max) @ IC = 5.0 Adc
• SOT–223 Surface Mount Packaging
C 2,4
CASE 318E–04, Style 1
C
B1
E3
B
Schematic
C
E
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Top View
Pinout
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VCEO
30
Vdc
Collector–Base Voltage
VCB
45
Vdc
Emitter–Base Voltage
VEB
± 8.0
Vdc
Base Current — Continuous
IB
1.0
Adc
Collector Current — Continuous
Collector Current — Peak
IC
3.0
5.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Total PD @ TA = 25_C mounted on 1” sq. (645 sq. mm) Drain pad on FR–4 bd material
Total PD @ TA = 25_C mounted on 0.92” sq. (590 sq. mm) Drain pad on FR–4 bd material
Total PD @ TA = 25_C mounted on 0.012” sq. (7.6 sq. mm) Drain pad on FR–4 bd material
PD
3.0
0.025
2.0
1.5
0.8
Watts
mW/_C
Watts
TJ, Tstg
– 55 to + 150
_C
Symbol
Max
Unit
RθJC
RθJA
RθJA
RθJA
40
60
85
156
_C/W
TL
260
_C
Collector–Emitter Voltage
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance – Junction to Case
– Junction to Ambient on 1” sq. (645 sq. mm) Drain pad on FR–4 bd material
– Junction to Ambient on 0.92” sq. (590 sq. mm) Drain pad on FR–4 bd material
– Junction to Ambient on 0.012” sq. (7.6 sq. mm) Drain pad on FR–4 bd material
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds
This document contains information on a new product. Specifications and information are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
 Motorola, Inc. 1997
Motorola Bipolar Power Transistor Device Data
1
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MMJT9410
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
30
—
—
—
—
20
—
—
10
—
—
—
0.110
0.140
—
0.150
0.200
0.550
—
—
1.45
—
—
1.10
85
80
60
170
—
—
—
—
—
—
80
135
—
200
—
—
100
—
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0 Adc)
Collector Cutoff Current
(VCE = 30 Vdc, RBE = 200
VCEO(sus)
Vdc
µAdc
ICER
)
Emitter Cutoff Current
(VBE = 5.0 Vdc)
IEBO
Adc
ON CHARACTERISTICS(1)
Collector–Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 20 mAdc)
(IC = 1.2 Adc, IB = 20 mAdc)
(IC = 5.0 Adc, IB = 1.0 Adc)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 1.0 Adc)
VBE(sat)
Base–Emitter On Voltage
(IC = 1.2 Adc, VCE = 4.0 Vdc)
VBE(on)
DC Current Gain
(IC = 1.0 Adc, VCE = 1.0 Vdc)
(IC = 1.2 Adc, VCE = 1.0 Vdc)
(IC = 3.0 Adc, VCE = 1.0 Vdc)
hFE
Vdc
Vdc
Vdc
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = 8.0 Vdc)
Cib
Current–Gain — Bandwidth Product(2)
(IC = 500 mA, VCE = 10 Vdc, Ftest = 1.0 MHz)
pF
pF
fT
MHz
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) fT = |hFE| S ftest
2
Motorola Bipolar Power Transistor Device Data
MMJT9410
1.0
VBE(sat)
150°C
25°C
–55°C
100
V, VOLTAGE (V)
h FE , DC CURRENT GAIN
1000
10
0.1
VCE(sat)
VCE = 1 V
IC/IB = 70
1.0
0.01
1.0
0.1
0.01
10
0.1
1.0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
Figure 2. “ON” Voltages
10
1000
1.00
0.25 A 0.5 A
0.8 A IC = 1.2 A
0.75
CAPACITANCE (pF)
VCE(sat) , COLLECTOR–EMITTER VOLTAGE (V)
0.01
0.50
Cob
100
0.25
10
0
1.0
10
100
0.1
1.0
10
IB, BASE CURRENT (mA)
VR, REVERSE BIAS (V)
Figure 3. Collector Saturation Region
Figure 4. Capacitance
Motorola Bipolar Power Transistor Device Data
100
3
MMJT9410
PACKAGE DIMENSIONS
A
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
4
S
B
1
2
3
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
D
L
G
J
C
0.08 (0003)
M
H
INCHES
DIM MIN
MAX
A
0.249
0.263
B
0.130
0.145
C
0.060
0.068
D
0.024
0.035
F
0.115
0.126
G
0.087
0.094
H 0.0008 0.0040
J
0.009
0.014
K
0.060
0.078
L
0.033
0.041
M
0_
10 _
S
0.264
0.287
MILLIMETERS
MIN
MAX
6.30
6.70
3.30
3.70
1.50
1.75
0.60
0.89
2.90
3.20
2.20
2.40
0.020
0.100
0.24
0.35
1.50
2.00
0.85
1.05
0_
10 _
6.70
7.30
K
CASE 318E–04
ISSUE H
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4
◊
Motorola Bipolar Power Transistor Device
Data
MMJT9410/D
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