Infineon BFR182W Low noise silicon bipolar rf transistor Datasheet

BFR182W
Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
3
2
1
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR182W
Marking
RGs
Pin Configuration
1=B
2=E
Package
SOT323
3=C
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
35
Base current
IB
4
Total power dissipation1)
Ptot
250
mW
Junction temperature
TJ
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
TStg
-65 ... 150
V
mA
TS ≤ 90 °C
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
1T
S is
2For
Value
Unit
240
K/W
measured on the collector lead at the soldering point to the pcb
the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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2014-04-07
BFR182W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
12
-
-
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 1 mA, IB = 0
Collector-emitter cutoff current
nA
ICES
VCE = 4 V, VBE = 0
-
1
30
VCE = 15 V, VBE = 0 V, TA = 85 °C
-
5
70
ICBO
-
1
30
IEBO
-
-
50
hFE
70
100
140
(verified by random sampling)
Collector-base cutoff current
VCB = 4 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
-
IC = 10 mA, VCE = 8 V, pulse measured
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2014-04-07
BFR182W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
6
8
-
Ccb
-
0.34
0.5
Cce
-
0.26
-
Ceb
-
0.8
-
AC Characteristics (verified by random sampling)
Transition frequency
GHz
IC = 15 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum noise figure
dB
NFmin
IC = 3 mA, VCE = 8 V, ZS = ZSopt ,
-
0.9
-
-
1.3
-
Gms
-
19
-
dB
Gma
-
12.5
-
dB
f = 900 MHz
IC = 3 mA, VCE = 8 V, ZS = ZSopt ,
f = 1.8 GHz
Power gain, maximum stable1)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
Power gain, maximum available2)
IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
|S21e|2
Transducer gain
dB
IC = 10 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
-
15.5
-
IC = 10 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
-
10
-
1G
ms = |S21 / S12|
1/2
ma = |S21e / S12e | (k-(k²-1) )
2G
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2014-04-07
BFR182W
Total power dissipation P tot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(tp)
10 3
300
mW
RthJS
Ptot
K/W
200
10 2
150
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
100
50
0
0
20
40
60
80
100
120 °C
10 1 -7
10
150
TS
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp )
P totmax/PtotDC
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
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2014-04-07
Package SOT323
5
BFR182W
2014-04-07
BFR182W
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
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For information on the types in question, please contact the nearest Infineon
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6
2014-04-07
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