FFA60UP30DN tm Features 60 A, 300 V Ultrafast Dual Diode • Ultrafast Recovery, Trr = 55 ns (@IF = 30 A) • Max. Forward Voltage, VF = 1.5 V (@ TC = 25°C) The FFA60UP30DN is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applicationa as welder and UPS application. • Reverse Voltage: VRRM = 300 V • Avalanche Energy Rated • RoHS Compliant Applications • General Purpose • Switching Mode Power Supply • Free-Wheeling Diode for Motor Application • Power Switching Circuits 1 1 TO-3PN 2 3 1. Anode 2. Cathode 3. Anode 1.Anode 2.Cathode 3.Anode Absolute Maximum Ratings Symbol (per diode) Ta = 25°C unless otherwise noted Value Unit VRRM Peak Repetitive Reverse Voltage Parameter 300 V VRWM Working Peak Reverse Voltage 300 V VR DC Blocking Voltage 300 V IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics T a Symbol RθJC @ TC = 135°C Maximum Thermal Resistance, Junction to Case FFA60UP30DN Rev. A A A - 65 to +150 °C = 25°C unless otherwise noted Parameter ©2005 Fairchild Semiconductor Corporation 30 300 1 Max Units 0.53 °C/W www.fairchildsemi.com FFA60UP30DN 60 A, 300 V Ultrafast Dual Diode Septempber 2005 Symbol (per diode) Ta = 25°C unless otherwise noted Parameter Min. Typ. Max. Unit IF = 30 A IF = 30 A TC = 25 °C TC = 150 °C - - 1.5 1.3 V V VR = 300 V VR = 300 V TC = 25 °C TC = 150 °C - - 100 500 µA µA trr IF =1 A, di/dt = 100 A/µs, VCC = 30 V IF =30 A, di/dt = 200 A/µs, VCC = 195 V TC = 25 °C TC = 25 °C - - 45 55 ns ns ta tb Qrr IF =30 A, di/dt = 200 A/µs, VCC = 195 V TC = 25 °C TC = 25 °C TC = 25 °C - 17 15 50 - ns ns nC WAVL Avalanche Energy (L = 20 mH) 20 - - mJ VF * IR * *Pulse Test: Pulse Width=300 µs, Duty Cycle=2% ©2005 Fairchild Semiconductor Corporation FFA60UP30DN Rev. A 2 www.fairchildsemi.com FFA60UP30DN 60 A, 300 V Ultrafast Dual Diode Electrical Characteristics Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current 100 100 o o Reverse Current, IR [µA] Forward Current, IF [A] TC = 100 C TC = 25 C 10 1 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 o TC = 100 C 1 o TC = 25 C 0.1 0.01 3.5 0 50 100 Forward Voltage, VF [V] Figure 3. Typical Junction Capacitance Capacitance, CJ [pF] Reverse Recovery Time, Trr [ns] 1 10 350 50 o TC = 100 C 40 30 o TC = 25 C 20 100 100 200 Average Rectified Forward Current, IF(AV) [A] 10 8 o TC = 100 C 6 4 o TC = 25 C 2 300 400 500 500 40 35 30 25 DC 20 15 10 5 0 125 130 135 140 145 150 o di / dt [A/µs] ©2005 Fairchild Semiconductor Corporation 400 Figure 6. Forward Current Deration Curve 12 200 300 di / dt [A/µs] Figure 5. Typical Reverse Recovery Current Reverse Recovery Current, Irr [A] 300 60 Reverse Voltage, VR [V] FFA60UP30DN Rev. A 250 70 100 0 100 200 Figure 4. Typical Reverse Recovery Time 1000 10 0.1 150 Reverse Voltage, VR [V] Case Temperature, Tc [ C] 3 www.fairchildsemi.com FFA60UP30DN 60 A, 300 V Ultrafast Dual Diode Typical Performance Characteristics FFA60UP30DN 60 A, 300 V Ultrafast Dual Diode Mechanical Dimensions TO-3PN Dimensions in Millimeters ©2005 Fairchild Semiconductor Corporation FFA60UP30DN Rev. A ©2005 Fairchild Semiconductor Corporation FFA60UP30DN Rev. A