CEL NX8346TS-AZ 1 310 nm algainas mqw-dfb laser diode for 10 gb/s application Datasheet

LASER DIODE
NX8346TS
1 310 nm AlGaInAs MQW-DFB LASER DIODE
FOR 10 Gb/s APPLICATION
DESCRIPTION
The NX8346TS is a 1 310 nm Multiple Quantum Well (MQW) structured
Distributed
Feed-Back
(DFB)
laser
diode
TOSA
(transmitter
optical
subassembly) with InGaAs monitor PIN-PD in a receptacle type package
designed for SFP+/XFP transceiver.
APPLICATIONS
• 10 G BASE-LW/LR
• 10 G Fibre Channel
FEATURES
• Internal optical isolator
• Optical output power
Pf = −3 dBm
• Low threshold current
lth = 8 mA TYP. @ TC = 25°C
• Wide operating temperature range
TC = −5 to +95°C
• InGaAs monitor PIN-PD
Document No. PL10723EJ01V0DS (1st edition)
Date Published July 2008 NS
2008
NX8346TS
PACKAGE DIMENSIONS (UNIT : mm)
BOTTOM VIEW
φ 5.0
φ 2.99
Remarks1.
2.
3.
4.
2
φ 5.6±0.05
5.15
8.7
(4.05)
Signal surface
1.01
1.0±0.2
5–0.79
6–0.36
4.84
(14.8 MAX.)
PD Cathode
GND
LD Cathode
LD Anode
GND
NC
1.0 MAX.
GND surface
Receptacle is electrically isolated from CAN.
Characteristic impedance of flexible printed circuit is 25 Ω.
NX8346TS has no matching resistor installed.
( ) indicates nominal dimension.
Data Sheet PL10723EJ01V0DS
2.29
φ 4.7±0.05
φ 5.2±0.05
2– φ 1.0
1.85
φ 5.2±0.05
5.55 MAX.
3±0.1
1.3
φ 3.5±0.1
9.60
φ 3.5±0.04
OPTICAL
REFERENCE
PLANE
0.55
1.35
1.75
φ 2.92
NX8346TS
ORDERING INFORMATION
Part Number
NX8346TS-AZ
Receptacle Type
LC, Electrically isolated
Note
Differential input with short length flexible PCB, without matching resistor
Data Sheet PL10723EJ01V0DS
3
NX8346TS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Storage Temperature
Tstg
−40 to +95
°C
Operating Case Temperature
TC
−5 to +95
°C
Forward Current of LD
IFLD
120
mA
Reverse Voltage of LD
VRLD
2
V
Forward Current of PD
IFPD
10
mA
Reverse Voltage of PD
VRPD
20
V
Soldering Temperature
Tsld
260 (10 sec.)
°C
Pf
5
mW
(Flexible Printed Circuit)
Optical Output Power
4
Data Sheet PL10723EJ01V0DS
NX8346TS
ELECTRO-OPTICAL CHARACTERISTICS (TC = −5 to +95°C, BOL, unless otherwise specified)
Parameter
Symbol
Conditions
MIN.
Pf
Peak Emission Wavelength
λp
CW, Pf = −3 dBm
1 260
SMSR
CW, Pf = −3 dBm
35
Threshold Current
Ith
CW, TC = 25°C
ηd
nm
dB
2
15
mA
26
CW, Pf = −3 dBm, TC = 25°C
0.020
CW, Pf = −3 dBm
0.012
0.060
−3.5
1.5
dB
Δηd
Temperature Dependence of
Unit
dBm
1 355
8
CW
Differential Efficiency
MAX.
−3
Mean Optical Output Power
Side Mode Suppression Ratio
TYP.
Δηd = 10 log
Differential Efficiency
ηd
0.033
0.040
W/A
ηd (@ 25°C)
Operation Voltage
Vop
CW, Pf = −3 dBm
0.5
2.2
V
Monitor Current
Im
CW, Pf = −3 dBm
70
700
μA
Monitor Dark Current
ID
VR = 3.3 V, TC = 25°C
10
nA
VR = 3.3 V
500
Rise Time
tr
20-80%
*1
50
ps
Fall Time
tf
20-80%
*1
50
ps
Monitor PD Terminal Capacitance
Ct
VR = 3.3 V, f = 1 MHz
20
pF
−128
dB/Hz
1.0
dB
Relative Intensity Noise
RIN
6
*1
−1.0
γ
*2
Tracking Error
31
*1 9.95/10.3/10.5 Gb/s, PRBS 2 −1, NRZ, Duty Cycle = 50%
*2 Tracking Error: γ
Pf
γ = 10 log
(mW)
Pf
Pf @ 25°C
[dB]
TC = 25°C
Pf @ 25°C
TC = –5 to +95°C
Pf
0
Im
Im
(mA)
Data Sheet PL10723EJ01V0DS
5
NX8346TS
REFERENCE
Document Name
Opto-Electronics Devices Pamphlet
6
Document No.
PX10160E
Data Sheet PL10723EJ01V0DS
NX8346TS
• The information in this document is current as of July, 2008. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
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representative for availability and additional information.
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or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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M8E 02. 11-1
Data Sheet PL10723EJ01V0DS
7
NX8346TS
SAFETY INFORMATION ON THIS PRODUCT
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER
mW MAX
WAVELENGTH
nm
CLASS lllb LASER PRODUCT
Warning
Laser Beam
SEMICONDUCTOR LASER
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
Caution
Optical Fiber
A glass-fiber is attached on the product. Handle with care.
• When the fiber is broken or damaged, handle carefully to avoid injury from the damaged part
or fragments.
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