Yea Shin FF1AS Gpp surface mount fast recovery rectifier Datasheet

DATA SHEET
FF1AS THRU FF1MS
SEMICONDUCTOR
GPP SURFACE MOUNT FAST RECOVERY RECTIFIER
H
50 to 1000 Volts CURRENT 1.0 Amperes
SOD-123S Unit:inch(mm)
• For surface mounted applications
• Low profile package
• Ideal for automated placement
0.112(2.85)
0.100(2.55)
.037(0.94)
TYP
FEATURES
0.067(1.70)
0.055(1.40)
VOLTAGE
• High temperature soldering : 260°C /10 seconds at terminals
• Glass Passivated Chip Junction
• In compliance with EU RoHS 2002/95/EC directives
0.006(0.15)
TYP
0.047(1.20)
MAX
MECHANICAL DATA
0.014(0.35)
MIN
Case:SOD-123S,Molded Plastic over passivated junction
0.152(3.85)
0.140(3.55)
• Terminals: Solderable per MIL-STD-750, Method 2026
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
PARAMETER
SYMBOL FF1AS
Marking Code
FF1BS FF1DS FF1GS
FF1JS
FF1KS FF1MS UNITS
F1
F2
F3
F4
F5
F6
F7
Maximum Recurre nt Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC Blo cking Voltage
VDC
50
100
200
400
600
800
1000
Maximum Average Forw a rd Rect ified Current at TA = 55 °C
I F(AC)
1.0
Amps
IFSM
30
Amps
VF
1.30
Volts
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load(JEDEC Method)
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current at
@TA = 25 °C
Rated DC Blocking Voltage
@TA = 125 °C
Maximum Reverse Recovery Time
IR
trr
R θ JL
Typical thermal resistance(Note 2)
Operating and Storage Temperature Range
uAmps
150
Maxi mum Thermal Resi stance (Note 2)
Typical Junction Capacitance (Note 1)
5.0
Volts
250
150
500
nSec
30
°C / W
R θ JA
65
°C / W
CJ
15
pF
TJ, TSTG
-55 to +150
°C
NOTES: 1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
2.Soldering land: 6mm x 6mm
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RATING AND CHARACTERISTIC CURVES
FF1AS THRU FF1MS
FIG.1-TYPICAL FORWARD
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
AV E R A G E F O R W A R D C U R R E N T,(A )
CHARACTERISTICS
10
3.0
1.0
1.2
1.0
0.8
Single Phase
0.6
Half Wave 60Hz
Resistive Or Inductive Load
0.4
0.2
0
55
T J=25 C
0.1
.6
.8
1.0
1.2
1.4
FORWARD VOLT
1.6
1.8
2.0
AGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
NONINDUCTIVE
10
NONINDUCTIVE
(
(+)
D.U.T.
25Vdc
(approx.)
)
PULSE
GENERATOR
(NOTE 4)
)
P E A K F O R W A A R D S U R G E C U R R E N T,(A )
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
.01
(
150
AMBIENT TEMPERATURE ( C)
Pulse Width 300us
1% Duty Cycle
50
40
30
Sine Wave
20
JEDEC method
10
0
1
5
4. Rise Time= 10ns max., Source Impedance= 50 ohms.
|
|
|
|
|
|
|
|
0
-0.25A
100
FIG.5-TYPICAL JUNCTION CAPACITANCE
NOTES: 3. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
+0.5A
50
10
NUMBER OF CYCLES AT 60Hz
OSCILLISCOPE
(NOTE 3)
trr
8.3ms Single Half
T J=25 C
(+)
1
NONINDUCTIVE
35
JU N C T IO N C A PA C ITA N C E ,(pF )
IN S TA N TA N E O U S F O R W A R D C U R R E N T,(A )
50
30
25
20
15
10
5
0
-1.0A
.01
1cm
.05
SET TIME BASE FOR
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
50 / 10ns / cm
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FF1AS THRU FF1MS
FIG.6
INSTANTANEOUS REVERSE CURRENT,UA
100.00
125℃
10.00
1.00
75℃
0.10
25℃
0.01
200V
400V
800V
600V
1000V
PERCENT OF PEAK REVERSE VOLTAGE
MOUNTING PAD LAYOUT
S
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亞 昕 科 技 股 份 有 限 公 司
YEASHIN
TECHNOLOGY CO., LTD.
Marking Information
F1
F1
(Halogen Free)
(With Halogen)
Device Code
FF1AS : F1
FF1BS : F2
FF1DS : F3
FF1GS : F4
FF1JS : F5
FF1KS : F6
FF1MS : F7
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REV.03 20141119
Version changes Information
FF1AS THRU FF1MS
Version 1:2006/08/01
Version 2:2010/06/01 change YS logo.
Version 3:2014/11/19 added graph drawing number 6.
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REV.03 20141119
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