DATA SHEET FF1AS THRU FF1MS SEMICONDUCTOR GPP SURFACE MOUNT FAST RECOVERY RECTIFIER H 50 to 1000 Volts CURRENT 1.0 Amperes SOD-123S Unit:inch(mm) • For surface mounted applications • Low profile package • Ideal for automated placement 0.112(2.85) 0.100(2.55) .037(0.94) TYP FEATURES 0.067(1.70) 0.055(1.40) VOLTAGE • High temperature soldering : 260°C /10 seconds at terminals • Glass Passivated Chip Junction • In compliance with EU RoHS 2002/95/EC directives 0.006(0.15) TYP 0.047(1.20) MAX MECHANICAL DATA 0.014(0.35) MIN Case:SOD-123S,Molded Plastic over passivated junction 0.152(3.85) 0.140(3.55) • Terminals: Solderable per MIL-STD-750, Method 2026 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. PARAMETER SYMBOL FF1AS Marking Code FF1BS FF1DS FF1GS FF1JS FF1KS FF1MS UNITS F1 F2 F3 F4 F5 F6 F7 Maximum Recurre nt Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blo cking Voltage VDC 50 100 200 400 600 800 1000 Maximum Average Forw a rd Rect ified Current at TA = 55 °C I F(AC) 1.0 Amps IFSM 30 Amps VF 1.30 Volts Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load(JEDEC Method) Maximum Forward Voltage at 1.0A DC Maximum DC Reverse Current at @TA = 25 °C Rated DC Blocking Voltage @TA = 125 °C Maximum Reverse Recovery Time IR trr R θ JL Typical thermal resistance(Note 2) Operating and Storage Temperature Range uAmps 150 Maxi mum Thermal Resi stance (Note 2) Typical Junction Capacitance (Note 1) 5.0 Volts 250 150 500 nSec 30 °C / W R θ JA 65 °C / W CJ 15 pF TJ, TSTG -55 to +150 °C NOTES: 1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC 2.Soldering land: 6mm x 6mm http://www.yeashin.com 1 REV.03 20141119 RATING AND CHARACTERISTIC CURVES FF1AS THRU FF1MS FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE AV E R A G E F O R W A R D C U R R E N T,(A ) CHARACTERISTICS 10 3.0 1.0 1.2 1.0 0.8 Single Phase 0.6 Half Wave 60Hz Resistive Or Inductive Load 0.4 0.2 0 55 T J=25 C 0.1 .6 .8 1.0 1.2 1.4 FORWARD VOLT 1.6 1.8 2.0 AGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50 NONINDUCTIVE 10 NONINDUCTIVE ( (+) D.U.T. 25Vdc (approx.) ) PULSE GENERATOR (NOTE 4) ) P E A K F O R W A A R D S U R G E C U R R E N T,(A ) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT .01 ( 150 AMBIENT TEMPERATURE ( C) Pulse Width 300us 1% Duty Cycle 50 40 30 Sine Wave 20 JEDEC method 10 0 1 5 4. Rise Time= 10ns max., Source Impedance= 50 ohms. | | | | | | | | 0 -0.25A 100 FIG.5-TYPICAL JUNCTION CAPACITANCE NOTES: 3. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. +0.5A 50 10 NUMBER OF CYCLES AT 60Hz OSCILLISCOPE (NOTE 3) trr 8.3ms Single Half T J=25 C (+) 1 NONINDUCTIVE 35 JU N C T IO N C A PA C ITA N C E ,(pF ) IN S TA N TA N E O U S F O R W A R D C U R R E N T,(A ) 50 30 25 20 15 10 5 0 -1.0A .01 1cm .05 SET TIME BASE FOR .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) 50 / 10ns / cm http://www.yeashin.com 2 REV.03 20141119 FF1AS THRU FF1MS FIG.6 INSTANTANEOUS REVERSE CURRENT,UA 100.00 125℃ 10.00 1.00 75℃ 0.10 25℃ 0.01 200V 400V 800V 600V 1000V PERCENT OF PEAK REVERSE VOLTAGE MOUNTING PAD LAYOUT S http://www.yeashin.com 3 REV.03 20141119 亞 昕 科 技 股 份 有 限 公 司 YEASHIN TECHNOLOGY CO., LTD. Marking Information F1 F1 (Halogen Free) (With Halogen) Device Code FF1AS : F1 FF1BS : F2 FF1DS : F3 FF1GS : F4 FF1JS : F5 FF1KS : F6 FF1MS : F7 http://www.yeashin.com 4 REV.03 20141119 Version changes Information FF1AS THRU FF1MS Version 1:2006/08/01 Version 2:2010/06/01 change YS logo. Version 3:2014/11/19 added graph drawing number 6. http://www.yeashin.com 5 REV.03 20141119