Analog Power AM4835EP P-channel 30-v (d-s) mosfet Datasheet

AM4835EP
Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
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•
•
•
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
19 @ VGS = -10V
-30
30 @ VGS = -4.5V
ID (A)
-9.5
-7.5
SOIC-8
Top View
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
S
S
S
1
2
8
7
D
D
S
G
3
4
6
5
D
D
G
D
P-Channel MOSFET
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
-30
Drain-Source Voltage
VDS
V
VGS
±25
Gate-Source Voltage
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
-9.5
ID
IDM
±50
IS
-2.1
o
TA=25 C
a
Power Dissipation
o
TA=70 C
THERMAL RESISTANCE RATINGS
Parameter
a
Maximum Junction-to-Case
a
Maximum Junction-to-Ambient
t <= 5 sec
t <= 10 sec
RθJC
RθJA
W
2.6
TJ, Tstg
Symbol
A
3.1
PD
Operating Junction and Storage Temperature Range
A
-8.3
o
C
-55 to 150
Maximum
25
50
Units
o
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM4835E_C
AM4835EP
Analog Power
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = -250 uA
VDS = VGS, ID = -250 uA
Limits
Unit
Min Typ Max
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
A
IDSS
ID(on)
Drain-Source On-Resistance
A
rDS(on)
-30
-1
Diode Forward Voltage
Dynamic
A
g fs
VSD
V
-3
VDS = 0 V, VGS = ±4.5 V
±200
nA
VDS = -24 V, VGS = 0 V
-1
-5
uA
VDS = -24 V, VGS = 0 V, T J = 55oC
VDS = -5 V, VGS = -10 V
VGS = -10 V, ID = -9.5 A
VGS = -4.5 V, ID = -7.5 A
-50
A
16
26
19
30
VGS = -10 V, ID = -9.5 A, TJ = 55 C
20
29
VDS = -15 V, ID = -9.5 A
IS = -2.1 A, VGS = 0 V
31
-0.7
-1.2
12.8
20
o
Forward Tranconductance
-1.6
mΩ
S
V
b
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
VDS = -15 V, VGS = -4.5 V,
ID = -9.5 A
nC
4.5
5
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
td(on)
tr
td(off)
tf
VDD = -15 V, RL = 15 Ω , ID = -1 A,
VGEN = -10 V, RG = 6Ω
15
12
62
46
26
21
108
71
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM4835E_C
AM4835EP
Analog Power
Typical Electrical Characteristics (P-Channel)
50
0 .0 4
RDS(ON) Resistance (Ω)
4 .5 V
IDS Drain Current (A)
40
5 Vthr ough 10 V
4V
30
20
3 .5
10
3
0 .0 3 2
VGS=4.5V
0 .0 2 4
VGS=10V
0 .0 16
0 .0 0 8
0
0
0
0 .5
1
1.5
2
2 .5
3
3 .5
0
4
20
30
40
50
I D Drain Current (A)
VDS (V)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance with Drain Current
0 .0 6
1.6
VGS = 10V
ID = 9.5A
1.4
Resistance (Ω )
Normalized RDS(on)
10
1.2
1.0
0 .0 5
0 .0 4
0 .0 3
0 .0 2
0.8
R
0 .0 1
0.6
- 50
- 25
0
25
50
75
100
125
0
150
0
2
4
6
8
10
VGS Gate to Source Voltage (V)
T J Juncation T emperature (ºC)
Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance Variation with
Gate to Source Voltage
60
VD=VG
100
-55C
25C
40
I Source Current (A)
ID Drain Current (A)
50
30
125C
20
10
10
T J = 150 C
T J = 25C
1
0
0
1
2
3
4
5
6
0 .1
VGS Ga te to S o urc e Vo lta ge (V)
0
0 .2
0 .4
0 .6
0 .8
1
1 .2
VS D Source to Drain Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
3
PRELIMINARY
Publication Order Number:
DS-AM4835E_C
AM4835EP
Analog Power
Typical Electrical Characteristics (P-Channel)
2000
10
Vgs Gate to Source ( V
VD= 10V
ID= -9.5A
Ciss
8
Capacitance (pF)
1500
6
4
2
0
0
5
10
15
20
25
1000
Coss
500
Crss
0
30
0
Qg, Total Gate Charge (nC)
5
Figure 7. Gate Charge Characteristics
limited
RDS(ON)
100
ID
15
20
Figure 8. Capacitance Characteristics
50
10 us
100 us
45
40
10
1ms
10ms
1
POWER (W
ID Curren
10
VDS (V)
100
1s
1
0.1
35
30
25
20
10s
15
100s
DC
10
5
0.01
0.1
1
10
0
100
0.001
VDS Drain to Source Voltage (V)
Figure 9. Maximum Safe Operating Area
0.1
TIME(S) 10
1000
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
.5
.2
P DM
.1
.05
.02
t1
t2
1. Duty C yc a l D = t1/t2
2. P e r Unit B a s e R θJ A
=70C /W
3. T J M - T A = P DM Z θjc
4. S ure fa c e M o unte d
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (S)
Figure 11. Transient Thermal Response Curve
4
PRELIMINARY
Publication Order Number:
DS-AM4835E_C
AM4835EP
Analog Power
Package Information
SO-8: 8LEAD
H x 45°
5
PRELIMINARY
Publication Order Number:
DS-AM4835E_C
AM4835EP
Analog Power
Ordering information
• AM4835EP-T1-XX
–
–
–
–
–
–
–
A:
M:
4835:
E:
P:
T1:
XX:
Analog Power
MOSFET
Part number
ESD Protected
P-Channel
Tape & reel
Blank:
Standard
PF:
Leadfree
6
PRELIMINARY
Publication Order Number:
DS-AM4835E_C
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