Nell N-HFA16TB120 Fred ultrafast soft recovery diode, 16 a Datasheet

RoHS
N-HFA16TB120 RoHS
SEMICONDUCTOR
Nell High Power Products
FEATURES
FRED
Ultrafast Soft Recovery Diode, 16 A
Available
RoHS*
COMPLIANT
Ultrafast recovery
Ultrasoft recovery
Very low I RRM
Very low Q rr
Specified at operating conditions
Lead (Pb)-free
Designed and qualified for industrial level
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
cathode
2
DESCRIPTION
HFA16TB120 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features
a superb combination of characteristics which result
in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 1200V
and 16 A continuous current, the HFA16TB120 is
especially well suited for use as the companion
diode for IGBTs and MOSFETs. In addition to ultrafast
recovery time, the FRED product line features
extremely low values of peak recovery current (I RRM )
and does not exhibit any tendency to “snap-off” during
the t b portion of recovery. The FRED features combine
to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode
and the switching transistor. These FRED advantages
can help to significantly reduce snubbing, component
count and heatsink sizes. The FRED HFA16TB120
is ideally suited for applications in power supplies and
conversion systems (such as inverters), motor drives,
and many other similar applications where high speed,
high efficiency is needed.
1
Cathode
3
Anode
TO-220AC
h
PRODUCT SUMMARY
VR
1200 V
VF at 16A at 25 ºC
3.0 V
IF(AV)
16 A
trr (typical)
30 ns
TJ (maximum)
150 ºC
Qrr (typical)
260 nC
dI(rec)M/dt (typical) at 125 ºC
76 A/µS
IRRM (typical)
5.8 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
SYMBOL
TEST CONDITIONS
VR
Tc = 100 ºC
IF
VALUES
UNITS
1200
V
16
Single pulse forward current
I FSM
190
Maximum repetitive forward current
I FRM
64
Maximum power dissipation
Operating junction and storage temperature range
www.nellsemi.com
PD
Tc = 25 ºC
151
Tc = 100 ºC
60
TJ, TStg
Page 1 of 6
- 55 to + 150
A
W
°C
RoHS
N-HFA16TB120 RoHS
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
Cathode to anode
breakdown voltage
(TJ = 25 ºC unless otherwise specified)
SYMBOL
VBR
TEST CONDITIONS
IR = 100 µA
MIN.
TYP.
MAX.
1200
-
-
-
2.5
3.0
IF = 16 A
Maximum forward voltage
VFM
-
3.0
3.5
IF = 16 A, TJ = 125 ºC
-
2.3
2.8
V R = V R rated
-
0.75
T J = 125°C, V R = V R rated
-
375
20
2000
40
pF
-
nH
UNITS
IRM
Junction capacitance
CT
V R = 200V
-
27
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
SYMBOL
Reverse recovery time
Peak recovery current
Reverse recovery charge
Peak rate of fall of recovery
current during tb
TEST CONDITIONS
MIN.
TYP.
MAX.
-
28
35
IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C
-
30
-
trr1
TJ = 25 ºC
-
90
135
trr2
TJ = 125 ºC
-
164
245
IRRM1
TJ = 25 ºC
-
5.8
10
8.3
15
-
260
675
-
680
1838
TJ = 25 ºC
-
120
-
TJ = 125 ºC
-
76
-
TJ = 125 ºC
Qrr1
TJ = 25 ºC
Qrr2
TJ = 125 ºC
dl(rec)M/dt1
dl(rec)M/dt2
ns
-
IRRM2
µA
(TJ = 25 ºC unless otherwise specified)
I F = 0.5A, I R = 1.0A, I RR = 250mA (RG#1 CKT)
trr
V
IF = 32 A
Maximum reverse
leakage current
PARAMETER
UNITS
IF= 16A
dIF/dt = -200 A/µs
VR = 200 V
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Lead temperature
Tlead
Thermal resistance,
junction to case
RthJC
Thermal resistance,
junction to ambient
RthJA
Thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
-
-
300
ºC
-
-
0.83
Typical socket mount
-
-
80
Mounting surface, flat, smooth and greased
-
0.50
-
-
2.0
-
g
-
0.07
-
6.0
(5.0)
-
12
(10)
oz.
kgf . cm
(lbf . in)
0.063" from case (1.6 mm) for 10 s
Weight
Mounting torque
Marking device
www.nellsemi.com
Case style TO-220AC
Page 2 of 6
HFA16TB120
K/W
RoHS
N-HFA16TB120 RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.2 Typical Reverse Current vs. Reverse Voltage
Fig.1 Maximum Forward Voltage Drop vs. Instantaneous
Forward Current
1000
T J = 150°C
100
100
T J = 125°C
10
1
T J = 25°C
0.1
10
A
0.01
0
200
400
600
800
1000
1200
T J = 150°C
T J = 125°C
Fig.3 Typical Junction C apacitance vs. Reverse Voltage
T J = 25°C
1000
1
100
T J = 25°C
10
0.1
0
2
4
6
8
1
Forward Voltage Drop - V FM (V)
1
10
100
1000
Fig.4 Maximum Thermal Impedance Z thJC Characteristics
1
0.1
D
D
D
D
D
D
=
=
=
=
=
=
0.50
0.20
0.10
0.05
0.02
0.01
PDM
Single Pulse
(Thermal Resistance)
t1
t2
Notes:
1. Duty factor D = t1/ t 2
2. Peak TJ = Pdm x ZthJC + Tc
0.01
0.00001
www.nellsemi.com
0.0001
0.001
0.01
Page 3 of 6
0.1
1
10
100
10000
RoHS
N-HFA16TB120 RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.5 Typical Reverse Recovery Time vs. dIF /dt (Per Leg)
Fig.7 Typical Stored Charge vs. dIF/dt (Per Leg)
270
1600
V R = 200V
T J = 125°C
T J = 25°C
1400
220
1200
lf = 16A
trr (ns)
lf = 8A
lf = 16A
lf = 8A
1000
170
800
120
600
400
70
200
V R = 200V
T J = 125°C
T J = 25°C
0
20
1000
100
100
1000
dl F /dt (A/µs)
dl F /dt (A/µs)
Fig.6 Typical Recovery Current vs. dlF/dt (Per Leg)
Fig.8 Typical dI(rec)M/dt vs. dIF/dt (Per Leg)
30
20
V R = 200V
T J = 125°C
T J = 25°C
dl (rec)M /dt(A/µs)
25
10000
V R = 200V
T J = 125°C
T J = 25°C
lf = 16A
lf = 8A
15
10
1000
lf = 16A
lf = 8A
100
5
0
100
10
100
1000
dl F /dt (A/µs)
www.nellsemi.com
1000
dl F /dt (A/µs)
Page 4 of 6
RoHS
N-HFA16TB120 RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.9 Reverse Recovery Parameter Test Circuit
VR = 200 V
0.01Ω
L = 70 µH
D.U.T.
dIF /dt
adjust
D
IRFP250
G
S
Fig.10 Reverse Recovery Waveform and Definitions
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M /dt (5)
0.75 I RRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
www.nellsemi.com
Page 5 of 6
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
t rrx I RRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
RoHS
N-HFA16TB120 RoHS
SEMICONDUCTOR
Nell High Power Products
ORDERING INFORMATION TABLE
Device code
-
N
1
HFA
16
TB
120
2
3
4
5
1
-
Nell Semiconductors product
2
-
FRED family
3
-
Current rating (16 = 16 A)
4
-
Package : TB = TO-220AC
5
-
Voltage rating (120 = 1200 V)
TO-220AC Package Outline
0.404 [10.26]
0.393 [9.98]
Cathode
0.186 [4.72]
0.174 [4.42]
0.114 [2.90]
0.102 [2.59]
0.058 [1.47]
0.047 [1.19]
Ø0.153 [3.89]
Ø0.149 [3.78]
0.508 [12.90]
0.492 [12.50]
0.362 [9.19]
0.354 [8.99]
0.154 [3.91]
0.134 [3.40]
0.110 [2.79]
0.099 [2.51]
0.531 [13.49]
0.515 [13.08]
0.057 [1.45]
0.047 [1.19]
Cathode
Anode
0.018 [0.46]
0.014 [0.36]
0.100 [2.54] TYP
0.204 [5.18]
0.196 [4.98]
www.nellsemi.com
Page 6 of 6
0.034 [0.86]
0.030 [0.76]
Similar pages