PRELIMINARY < High-power GaN HEMT (small signal gain stage) > MGF0843G L to C BAND / 20W non - matched DESCRIPTION OUTLINE DRAWING The MGF0843G, GaN HEMT with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. Unit : m illim eters FEATURES ① 4.4+0/-0.3 2MIN High voltage operation VDS=47V High output power Po=43.5dBm(TYP.) @f=2.6GHz,P3dB High efficiency d=60%(TYP.) @f=2.6GHz,P3dB Designed for use in Class AB linear amplifiers ② 2MIN ② φ2.2 0.6±0.2 APPLICATION MMDS/UMTS/WiMAX ③ QUALITY GG Packaging 5.0 0.1 4 inch Tray (25 pcs) Rg=60 Absolute maximum ratings Symbol VDS VGS IGR IGF PT*1 Tch Tstg Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature 14.0 (Ta=25C) Parameter Drain to Source Voltage Gate to source voltage 0.65 9.0±0.2 Ratings Unit 120 -10 -3 60 39 230 -65 to +175 V V mA mA W C C (1) GATE (2) SOURCE (FLANGE) (3) DRAIN GF-7 *1:Tc=25C Electrical characteristics Symbol (Ta=25C) Parameter Test conditions Gate to source cut-off voltage VDS=47V,ID=6mA 3dB gain compression power VDS=47V,ID(RF off)=170mA d Drain efficiency f=2.6GHz GLP *2 Linear power gain *2 : Pin=20dBm Rth(ch-c) *3 Thermal resistance ΔVf method VGS(off) P3dB Limits Unit Min. Typ. Max. -1 - -5 V 42.5 43.5 - dBm - 60 - % 13 14 - dB - 3.9 5.3 C/W *3 :Channel-case Specification are subject to change without notice. Note DC aging is recommended to perform before operating in order to stabilize a characteristics of GaN-HEMT. (Ta≧80C) Bias conditions Vds=47V , Ids=170mA Time 10hrs Publication Date : May., 2011 1 1.9±0.4 Ids=170mA 1.65 RECOMMENDED BIAS CONDITIONS Vds=47V < High-power GaN HEMT (small signal gain stage) > PRELIMINARY MGF0843G L to C BAND / 20W non - matched IDRF(A) 50 45 40 35 30 25 20 15 10 5 0 f=2.6GHz VD=47V IDQ=180mA Ta=25deg. Effi Gp 0.8 0.4 0.0 5 10 15 20 25 30 35 Pin(dBm) Publication Date : May., 2011 2 100 90 80 70 60 50 40 30 20 10 0 Efficiency(%) Po(dBm),Gp(dB) MGF0843G Example of Circuit Schematic and Charactreistics : f = 2.6 GHz < High-power GaN HEMT (small signal gain stage) > PRELIMINARY MGF0843G L to C BAND / 20W non - matched MGF0843G S-parameters( Ta=25deg.C , VDS=47(V),IDS=180(mA) ) S Parameters(Typ.) f (GHz) S11 S21 S12 S22 Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) Magn. Angle(deg.) 0.6 0.941 -155.7 8.876 92.2 0.038 7.8 0.488 -154.4 1.0 0.841 -166.9 5.442 79.2 0.038 5.3 0.470 -163.8 1.4 0.839 -176.4 3.987 69.6 0.053 14.8 0.458 -168.9 1.8 0.854 176.0 3.255 61.3 0.042 -3.4 0.458 -169.0 2.2 0.835 170.9 2.744 52.5 0.048 -6.4 0.472 -172.5 2.6 0.850 164.3 2.305 42.4 0.043 -10.0 0.492 -175.9 3.0 0.819 155.7 2.115 34.6 0.037 -9.3 0.462 -177.8 3.4 0.850 149.3 1.966 25.1 0.048 -7.7 0.462 176.4 3.8 0.833 141.1 1.743 14.3 0.054 -10.0 0.488 170.6 4.2 0.856 136.0 1.590 6.6 0.049 -26.0 0.510 164.0 4.6 0.856 130.1 1.459 -0.8 0.044 -22.8 0.525 159.2 5.0 0.848 127.4 1.373 -7.5 0.045 -22.7 0.548 154.9 5.4 0.837 121.5 1.287 -15.2 0.048 -19.1 0.574 152.0 5.8 0.823 115.3 1.237 -23.7 0.051 -21.8 0.603 148.9 6.2 0.818 105.7 1.180 -32.3 0.057 -27.6 0.620 147.2 6.6 0.813 95.0 1.138 -41.6 0.057 -27.3 0.621 143.1 7.0 0.828 81.9 1.085 -52.3 0.061 -32.2 0.610 137.5 7.4 0.839 72.5 1.030 -61.1 0.064 -32.6 0.597 130.3 7.8 0.845 64.2 0.979 -70.2 0.062 -38.2 0.596 122.1 8.2 0.855 58.3 0.941 -78.3 0.071 -41.7 0.601 112.4 Publication Date : May., 2011 3 < High-power GaN HEMT (small signal gain stage) > PRELIMINARY MGF0843G L to C BAND / 20W non - matched Keep safety first in your circuit designs! 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