Mitsubishi MGF0843G High-power gan hemt (small signal gain stage) Datasheet

PRELIMINARY
< High-power GaN HEMT (small signal gain stage) >
MGF0843G
L to C BAND / 20W
non - matched
DESCRIPTION
OUTLINE DRAWING
The MGF0843G, GaN HEMT with an N-channel schottky
gate, is designed for MMDS/UMTS/WiMAX applications.
Unit : m illim eters
FEATURES
①
4.4+0/-0.3
2MIN
 High voltage operation
VDS=47V
 High output power
Po=43.5dBm(TYP.) @f=2.6GHz,P3dB
 High efficiency
d=60%(TYP.) @f=2.6GHz,P3dB
 Designed for use in Class AB linear amplifiers
②
2MIN
②
φ2.2
0.6±0.2
APPLICATION
 MMDS/UMTS/WiMAX
③
QUALITY
 GG
Packaging
5.0
0.1
 4 inch Tray (25 pcs)
 Rg=60
Absolute maximum ratings
Symbol
VDS
VGS
IGR
IGF
PT*1
Tch
Tstg
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
14.0
(Ta=25C)
Parameter
Drain to Source Voltage
Gate to source voltage
0.65
9.0±0.2
Ratings
Unit
120
-10
-3
60
39
230
-65 to +175
V
V
mA
mA
W
C
C
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
GF-7
*1:Tc=25C
Electrical characteristics
Symbol
(Ta=25C)
Parameter
Test conditions
Gate to source cut-off voltage
VDS=47V,ID=6mA
3dB gain compression power
VDS=47V,ID(RF off)=170mA
d
Drain efficiency
f=2.6GHz
GLP *2
Linear power gain
*2 : Pin=20dBm
Rth(ch-c) *3
Thermal resistance
ΔVf method
VGS(off)
P3dB
Limits
Unit
Min.
Typ.
Max.
-1
-
-5
V
42.5
43.5
-
dBm
-
60
-
%
13
14
-
dB
-
3.9
5.3
C/W
*3 :Channel-case
Specification are subject to change without notice.
Note
DC aging is recommended to perform before operating in order to stabilize a characteristics of GaN-HEMT. (Ta≧80C)
 Bias conditions
Vds=47V , Ids=170mA
 Time
10hrs
Publication Date : May., 2011
1
1.9±0.4
 Ids=170mA
1.65
RECOMMENDED BIAS CONDITIONS
 Vds=47V
< High-power GaN HEMT (small signal gain stage) >
PRELIMINARY
MGF0843G
L to C BAND / 20W
non - matched
IDRF(A)
50
45
40
35
30
25
20
15
10
5
0
f=2.6GHz
VD=47V
IDQ=180mA
Ta=25deg.
Effi
Gp
0.8
0.4
0.0
5 10 15 20 25 30 35
Pin(dBm)
Publication Date : May., 2011
2
100
90
80
70
60
50
40
30
20
10
0
Efficiency(%)
Po(dBm),Gp(dB)
MGF0843G Example of Circuit Schematic and Charactreistics : f = 2.6 GHz
< High-power GaN HEMT (small signal gain stage) >
PRELIMINARY
MGF0843G
L to C BAND / 20W
non - matched
MGF0843G S-parameters( Ta=25deg.C , VDS=47(V),IDS=180(mA) )
S Parameters(Typ.)
f
(GHz)
S11
S21
S12
S22
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
0.6
0.941
-155.7
8.876
92.2
0.038
7.8
0.488
-154.4
1.0
0.841
-166.9
5.442
79.2
0.038
5.3
0.470
-163.8
1.4
0.839
-176.4
3.987
69.6
0.053
14.8
0.458
-168.9
1.8
0.854
176.0
3.255
61.3
0.042
-3.4
0.458
-169.0
2.2
0.835
170.9
2.744
52.5
0.048
-6.4
0.472
-172.5
2.6
0.850
164.3
2.305
42.4
0.043
-10.0
0.492
-175.9
3.0
0.819
155.7
2.115
34.6
0.037
-9.3
0.462
-177.8
3.4
0.850
149.3
1.966
25.1
0.048
-7.7
0.462
176.4
3.8
0.833
141.1
1.743
14.3
0.054
-10.0
0.488
170.6
4.2
0.856
136.0
1.590
6.6
0.049
-26.0
0.510
164.0
4.6
0.856
130.1
1.459
-0.8
0.044
-22.8
0.525
159.2
5.0
0.848
127.4
1.373
-7.5
0.045
-22.7
0.548
154.9
5.4
0.837
121.5
1.287
-15.2
0.048
-19.1
0.574
152.0
5.8
0.823
115.3
1.237
-23.7
0.051
-21.8
0.603
148.9
6.2
0.818
105.7
1.180
-32.3
0.057
-27.6
0.620
147.2
6.6
0.813
95.0
1.138
-41.6
0.057
-27.3
0.621
143.1
7.0
0.828
81.9
1.085
-52.3
0.061
-32.2
0.610
137.5
7.4
0.839
72.5
1.030
-61.1
0.064
-32.6
0.597
130.3
7.8
0.845
64.2
0.979
-70.2
0.062
-38.2
0.596
122.1
8.2
0.855
58.3
0.941
-78.3
0.071
-41.7
0.601
112.4
Publication Date : May., 2011
3
< High-power GaN HEMT (small signal gain stage) >
PRELIMINARY
MGF0843G
L to C BAND / 20W
non - matched
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Publication Date : May., 2011
4
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