MMBT3904ZW 200 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free WBFBP-03E FEATURES Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION General switching and amplification. MARKING REF. A B C D E F G (Top View) PACKAGING DIMENSION Package MPQ Leader Size WBFBP03E 10K 7 inch Millimeter Min. Max. 0.95 1.05 0.55 0.65 0.27 0.37 0.45REF. 0.27 0.37 0.45REF. 0.50REF. REF. H I J K L M Millimeter Min. Max. 0.50RE 0.20 0.30 0.30 0.40 0.10 0.20 0.01 0.10 0.45 0.55 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameters Symbol Rating Unit Collector - Emitter Voltage VCEO 40 V Collector - Base Voltage VCBO 60 V Emitter - Base Voltage VEBO 6 V IC 200 mA 1 PD 100 mW Collector Current - Continuous Total Device Dissipation 2 PD Thermal Resistance, Junction to Ambient Junction, Storage Temperature 1 590 mW RθJA 1 1250 °C / W RθJA 2 212 °C / W 150, -55 ~ +150 °C TJ, TSTG NOTE: 1. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint 2. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector1cm2 http://www.SeCoSGmbH.com/ 13-Dec-2013 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 MMBT3904ZW 200 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(Continued) Parameters Symbol MIN. MAX. Unit TEST CONDITIONS OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO 60 - Collector-Emitter Breakdown Voltage V(BR)CEO 40 - V IC =1mA, IB =0 Emitter-Base Breakdown Voltage V(BR)EBO 6 - V IE =10µA, IC=0 Collector cut-off current ICBO - 0.1 µA VCB=60V, IE =0 Collector Cut-Off Current ICEX - 50 nA VCE=30V, VBE(OFF)=3V µA VEB=5V, IC=0 Emitter cut-off current IEBO - 0.1 DC current gain hFE(2) 100 300 Collector-Emitter Saturation Voltage VCE(sat) - 0.3 Base-Emitter Saturation Voltage VBE(sat) - Current-Gain-Bandwidth Product fT 300 Delay Time td - Rise Time tr Storage Time ts Fall Time tf http://www.SeCoSGmbH.com/ 13-Dec-2013 Rev. A V IC=10µA, IE=0 IC=10mA, VCE=1V V IC =50mA, IB =5mA 0.95 V IC =50mA, IB =5mA - MHz 35 nS - 35 nS - 200 nS - 50 nS IC= 10mA, VCE= 20V, f=100MHz VCC=3V,VBE=-0.5V, IC=10mA, IB1 =1mA VCC=3V,IC=10mA IB1=IB2=1mA Any changes of specification will not be informed individually. Page 2 of 2