Battrax® Dual Port Negative SLIC Protector RoHS (R) 4 Ground 5 This Battrax device is an integrated overvoltage protection solution for SLIC-based (Subscriber Line Interface Circuit) line cards. This six-pin device is constructed using four SCRs and four gate diodes. The device is referenced to VBAT and conducts when a voltage that is more negative than -VREF is applied to the cathode (Pins 1, 3, 4, or 6) of the SCR. During conduction, all negative transients are shorted to Ground. All positive transients are passed to Ground by the diodes. 1 (T) 3 (R) 2 (-VREF) For specific diagrams showing these Battrax applications, see Figure 6.48 in Section 6, “Reference Designs” of this Telecom Design Guide. Electrical Parameters Part Number * VDRM Volts VS Volts VT Volts IDRM µAmps IGT mAmps IT Amps IH mAmps 100 B1101U_ 4L |-VREF| + |-1.2V| |-VREF| + |-10V| 4 5 100 2.2 B1161U_ 4L |-VREF| + |-1.2V| |-VREF| + |-10V| 4 5 100 2.2 160 B1201U_ 4L |-VREF| + |-1.2V| |-VREF| + |-10V| 4 5 100 2.2 200 * “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number. For individual “UA” and “UC” surge ratings, see table below. General Notes: • All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range. • IPP is a repetitive surge rating and is guaranteed for the life of the product. • IPP ratings assume a VREF = ±48 V. • VDRM is measured at IDRM. • VS is measured at 100 V/µs. • VREF maximum value for the negative Battrax is -200 V. Surge Ratings in Amps Series IPP 0.2x310 * 2x10 * 8x20 * 0.5x700 ** 2x10 ** 1.2x50 ** 10x160 * 10x160 ** 10x560 * 10x560 ** 5x320 * 9x720 ** Amps Amps Amps 10x360 * 10x1000 * 5x310 * ITSM 10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz Amps Amps Amps Amps A 20 150 150 90 50 75 75 C 50 500 400 200 150 200 175 Amps di/dt Amps Amps Amps/µs 45 75 20 500 100 200 50 500 * Current waveform in µs ** Voltage waveform in µs Telecom Design Guide • © 2006 Littelfuse 3 - 81 www.littelfuse.com SIDACtor Devices (T) 6 Battrax® Dual Port Negative SLIC Protector Thermal Considerations Package Symbol Modified MS-013 TJ Operating Junction Temperature Range -40 to +125 °C TS Storage Temperature Range -65 to +150 °C 60 °C/W 6 5 Parameter Thermal Resistance: Junction to Ambient RθJA 4 Value Unit 1 2 3 Capacitance Values pF Part Number B1101UA 4L B1101UC 4L B1161UA 4L B1161UC 4L B1201UA 4L B1201UC 4L MIN 50 50 50 50 50 50 MAX 200 200 200 200 200 200 Note: Off-state capacitance (CO) is measured at 1 MHz with a 2 V bias. IPP – Peak Pulse Current – %IPP +I VF VS VDRM VT -V IDRM +V IH IGT IT 100 50 0 tr td t – Time (µs) 10 IH 8 6 25 ˚C 4 2 IH (TC = 25 ˚C) tr x td Pulse Waveform Ratio of Percent of VS Change – % Half Value 0 14 12 0 -4 -6 2.0 1.8 1.6 1.4 25 ˚C 1.2 1.0 0.8 0.6 0.4 -40 -20 0 -8 -40 -20 0 20 40 60 80 100 120 140 160 Normalized VS Change versus Junction Temperature 20 40 60 80 100 120 140 160 Case Temperature (TC) – ˚C Junction Temperature (TJ) – ˚C www.littelfuse.com tr = rise time to peak value td = decay time to half value Waveform = tr x td -I V-I Characteristics Peak Value Normalized DC Holding Current versus Case Temperature 3 - 82 © 2006 Littelfuse • Telecom Design Guide