3.2mm ROUND SOLID STATE LED LAMPS L174XHT BRIGHT RED L174XGT GREEN L174XIT HIGH EFFICIENCY RED L174XYT YELLOW L174XSRT SUPER BRIGHT RED Features Description !LOW The Bright Red source color devices are made with Gallium POWER CONSUMPTION. !WIDE VIEWING ANGLE. !AVAILABLE ON Phosphide Red Light Emitting Diode. TAPE FOR AUTOMATIC MOUNTING MACHINE. !LONG The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange LIFE-SOLID STATE RELIABILITY. Light Emitting Diode. The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode. The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO: CDA0700 APPROVED : J. Lu REV NO: V.1 CHECKED : DATE: NOV/11/2001 DRAWN: Z.W.Yan PAGE: 1 OF 5 Selection Guide Par t No . Dic e Iv (m c d ) @ 10 m A *20 m A L en s Ty p e V i ew i n g An g l e Min . Ty p . 2θ1/2 L174XHT BRIGHT RED (GaP) RED TRANSPARENT 2 5 10 0 ° L174XIT HIGH EFFICIENCY RED (GaAsP/GaP) RED TRANSPARENT 8 30 10 0 ° L174XGT GREEN (GaP) GREEN TRANSPARENT 8 30 10 0 ° L174XYT YELLOW (GaAsP/GaP) YELLOW TRANSPARENT 8 30 10 0 ° L174XSRT SUPER BRIGHT RED (GaAlAs) RED TRANSPARENT *100 *400 10 0 ° Un it s Tes t Co n d it io n s Notes: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. 2. * Luminous intensity with asterisk is measured at 20mA. Electrical / Optical Characteristics at T)=25°°C Sy m b o l Par am et er D ev i c e Ty p . Max . Peak Wavelength Bright Red High Efficiency Red Green Yellow Super Bright Red 700 627 565 590 660 nm IF=20mA Dominate Wavelength Bright Red High Efficiency Red Green Yellow Super Bright Red 660 625 568 588 640 nm IF=20mA Bright Red High Efficiency Red Spectral Line Halfwidth Green Yellow Super Bright Red 45 45 30 35 20 nm IF=20mA Capacitance Bright Red High Efficiency Red Green Yellow Super Bright Red 40 15 15 20 45 pF VF=0V;f=1MHz VF Forward Voltage Bright Red High Efficiency Red Green Yellow Super Bright Red 2.25 2.0 2.2 2.1 1.85 2.5 2.5 2.5 2.5 2.5 V IF=20mA IR Reverse Current All 10 uA V R = 5V λpeak λD ∆λ1/2 C SPEC NO: CDA0700 APPROVED : J. Lu REV NO: V.1 CHECKED : DATE: NOV/11/2001 DRAWN: Z.W.Yan PAGE: 2 OF 5 Absolute Maximum Ratings at T)=25°°C B r i g h t R ed Hig h E f f i c i en c y R ed Gr een Yello w S u p er B r i g h t R ed Un it s Power dissipation 120 105 105 105 100 mW DC Forward Current 25 30 25 30 30 mA Peak Forward Current [1] 120 160 140 14 0 155 mA 5 5 5 5 5 V Par am et er Reverse Voltage -40°C To +85°C Operating/Storage Temperature 260°C For 5 Seconds Lead Solder Temperature [2] Notes: 1. 1/10 Duty Cycle, 0.1ms Pulse Width. 2. 4mm below package base. Bright Red L174XHT SPEC NO: CDA0700 APPROVED : J. Lu REV NO: V.1 CHECKED : DATE: NOV/11/2001 DRAWN: Z.W.Yan PAGE: 3 OF 5 High Efficiency Red L174XIT Green L174XGT SPEC NO: CDA0700 APPROVED : J. Lu REV NO: V.1 CHECKED : DATE: NOV/11/2001 DRAWN: Z.W.Yan PAGE: 4 OF 5 Yellow L174XYT Super Bright Red L174XSRT SPEC NO: CDA0700 APPROVED : J. Lu REV NO: V.1 CHECKED : DATE: NOV/11/2001 DRAWN: Z.W.Yan PAGE: 5 OF 5