DATA SHEET LASER DIODE NX5323EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s. APPLICATION • FTTH PON (B-PON, G-PON, GE-PON 10 km) system FEATURES • Optical output power Po = 13.0 mW • Low threshold current lth = 7 mA • Differential Efficiency ηd = 0.5 W/A • Wide operating temperature range TC = −40 to +85°C • InGaAs monitor PIN-PD • CAN package φ 5.6 mm • Focal point 6.35 mm The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PL10741EJ01V0DS (1st edition) Date Published July 2009 NS Printed in Japan 2009 NX5323EH PACKAGE DIMENSIONS (UNIT: mm) 110°±2° (0.4) BOTTOM VIEW 1 2 *2 *1 15.0±1.0 1.2±0.1 (3.0) *2 6.35±0.5 Focal Point Δx = ±300 μ m MAX. Δy = ±300 μ m MAX. PIN CONNECTIONS 1 (Case) Reference Plane LD 4 2 4– φ 0.45 φ 2.0 *1 Focal Point: A point to get maximum optical output power from fiber. *2 ( ) indicates nominal dimension. 2 4 3 φ 2.0 3.87±0.3 1.0±0.1 (0.4)*2 φ 5.6+0.00 –0.03 *2 (φ 4.2) (φ 3.55)*2 Data Sheet PL10741EJ01V0DS PD 3 NX5323EH ORDERING INFORMATION Part Number NX5323EH Package 4-pin CAN with ball lens cap Remarks 1. The color of ball lens cap might be observed differently. 2. The hermetic test will be performed as AQL 1.0%. Data Sheet PL10741EJ01V0DS 3 NX5323EH ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Optical Output Power Po 20 mW Forward Current of LD IF 150 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 10 mA Reverse Voltage of PD VR 15 V Operating Case Temperature TC −40 to +85 °C Storage Temperature Tstg −40 to +85 °C Lead Soldering Temperature Tsld 350 (3 sec.) °C Relative Humidity (noncondensing) RH 85 % ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) Parameter Symbol Operating Voltage Vop Threshold Current Ith Differential Efficiency ηd Center Wavelength λC Conditions MIN. Po = 13.0 mW 0.40 Po = 13.0 mW, RMS (−20 dB) TYP. MAX. Unit 1.1 1.5 V 7 15 mA 0.50 1 272 W/A 1 356 nm 1.5 2.3 nm TC = −40 to +85°C Spectral Width σ Po = 13.0 mW, RMS (−20 dB) TC = −40 to +85°C Rise Time tr 20-80% 0.15 0.3 ns Fall Time tf 80-20% 0.15 0.3 ns Monitor Current Im VR = 1.5 V, Po = 13.0 mW Monitor Dark Current ID VR = 10 V Monitor PD Terminal Capacitance Ct VR = 10 V, f = 1 MHz Fiber Coupling Power Pf Po = 13.0 mW, Optimized Coupling with Focal Distance 4 Df 8 degree angled SMF Data Sheet PL10741EJ01V0DS 100 μA 200 5 100 nA 20 pF 2.0 5.85 6.35 mW 6.85 mm NX5323EH REFERENCE Document Name Opto-Electronics Devices Pamphlet Document No. PX10160E Data Sheet PL10741EJ01V0DS 5 NX5323EH • The information in this document is current as of July, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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M8E0904E 6 Data Sheet PL10741EJ01V0DS NX5323EH SAFETY INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam. Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth.