ON NCV8403ADTRKG Self-protected low side driver Datasheet

NCV8403A, NCV8403B
Self-Protected Low Side
Driver with Temperature
and Current Limit
42 V, 14 A, Single N−Channel, SOT−223
www.onsemi.com
NCV8403A/B is a three terminal protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
This device offers protection and is suitable for harsh automotive
environments.
VDSS
(Clamped)
RDS(on) TYP
ID MAX
(Limited)
42 V
53 mW @ 10 V
15 A
Drain
Features
•
•
•
•
•
•
•
•
•
Short Circuit Protection
Thermal Shutdown with Automatic Restart
Over Voltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Overvoltage
Protection
Gate
Input
ESD Protection
Temperature
Limit
Current
Sense
Source
MARKING
DIAGRAM
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
Current
Limit
4
1
2
DRAIN
4
3
SOT−223
CASE 318E
STYLE 3
4
1 2
3
AYW
xxxxxG
G
1
2
3
SOURCE
GATE
DRAIN
YWW
xxxxxG
DPAK
CASE 369C
A
= Assembly Location
Y
= Year
W, WW = Work Week
xxxxx = V8403A or V8403B
G or G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
September, 2016 − Rev. 8
1
Publication Order Number:
NCV8403/D
NCV8403A, NCV8403B
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage Internally Clamped
VDSS
42
Vdc
Gate−to−Source Voltage
VGS
"14
Vdc
Drain Current
Continuous
ID
Total Power Dissipation − SOT−223 Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
Total Power Dissipation − DPAK Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
Internally Limited
PD
W
1.13
1.56
1.32
2.5
°C/W
Thermal Resistance − SOT−223 Version
Junction−to−Soldering Point
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Thermal Resistance − DPAK Version
Junction−to−Soldering Point
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJS
RqJA
RqJA
12
110
80
RqJS
RqJA
RqJA
2.5
95
50
Single Pulse Inductive Load Switching Energy
(VDD = 25 Vdc, VGS = 5.0 V, IL = 2.8 A, L = 120 mH, RG = 25 W)
EAS
470
Load Dump Voltage (VGS = 0 and 10 V, RI = 2.0 W, RL = 4.5 W, td = 400 ms)
mJ
VLD
55
V
Operating Junction Temperature
TJ
−40 to 150
°C
Storage Temperature
Tstg
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface mounted onto minimum pad size (0.412″ square) FR4 PCB, 1 oz cu.
2. Mounted onto 1″ square pad size (1.127″ square) FR4 PCB, 1 oz cu.
+
ID
DRAIN
IG
+
VDS
GATE
SOURCE
VGS
−
−
Figure 1. Voltage and Current Convention
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2
NCV8403A, NCV8403B
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
42
40
46
45
51
51
Vdc
Vdc
−
−
0.6
2.5
5.0
−
−
50
125
mAdc
1.0
−
1.7
5.0
2.2
−
Vdc
mV/°C
−
−
53
95
68
123
−
−
63
105
76
135
−
0.95
1.1
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = −40°C to 150°C) (Note 3)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) (Note 3)
IDSS
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
IGSS
mAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.2 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150°C) (Note 3)
RDS(on)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150°C) (Note 3)
RDS(on)
Source−Drain Forward On Voltage
(IS = 7.0 A, VGS = 0 V)
VSD
mW
mW
V
SWITCHING CHARACTERISTICS (Note 3)
Turn−ON Time (10% VIN to 90% ID)
tON
44
tOFF
84
tON
15
tOFF
116
−dVDS/dtON
2.43
dVDS/dtOFF
0.83
VIN = 0 V to 5 V, VDD = 25 V
ID = 1.0 A, Ext RG = 2.5 W
Turn−OFF Time (90% VIN to 10% ID)
Turn−ON Time (10% VIN to 90% ID)
VIN = 0 V to 10 V, VDD = 25 V,
ID = 1.0 A, Ext RG = 2.5 W
Turn−OFF Time (90% VIN to 10% ID)
Slew−Rate ON (20% VDS to 50% VDS)
Vin = 0 to 10 V, VDD = 12 V,
RL = 4.7 W
Slew−Rate OFF (80% VDS to 50% VDS)
ms
V/ms
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Current Limit
VGS = 5.0 V, VDS = 10 V
VGS = 5.0 V, TJ = 150°C (Note 3)
ILIM
10
5.0
15
10
20
15
Adc
Current Limit
VGS = 10 V, VDS = 10 V
VGS = 10 V, TJ = 150°C (Note 3)
ILIM
12
8.0
17
13
22
18
Adc
VGS = 5.0 Vdc (Note 3)
TLIM(off)
150
175
200
°C
VGS = 5.0 Vdc
DTLIM(on)
−
15
−
°C
VGS = 10 Vdc (Note 3)
TLIM(off)
150
165
185
°C
VGS = 10 Vdc
DTLIM(on)
−
15
−
°C
VGS = 5 V ID = 1.0 A
IGON
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
GATE INPUT CHARACTERISTICS (Note 3)
Device ON Gate Input Current
400
VGS = 10 V ID = 1.0 A
Current Limit Gate Input Current
VGS = 5 V, VDS = 10 V
IGCL
VGS = 5 V, VDS = 10 V
mA
0.1
0.6
VGS = 10 V, VDS = 10 V
Thermal Limit Fault Gate Input Current
mA
50
IGTL
mA
0.45
1.5
VGS = 10 V, VDS = 10 V
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 3)
Electro−Static Discharge Capability
Human Body Model (HBM)
ESD
4000
−
−
V
Electro−Static Discharge Capability
Machine Model (MM)
ESD
400
−
−
V
3. Not subject to production testing.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
www.onsemi.com
3
NCV8403A, NCV8403B
TYPICAL PERFORMANCE CURVES
1000
10
TJstart = 25°C
Emax (mJ)
ILmax (A)
TJstart = 25°C
TJstart = 150°C
100
1
10
10
100
100
L (mH)
L (mH)
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
Figure 3. Single−Pulse Maximum Switching
Energy vs. Load Inductance
100
1000
TJstart = 25°C
Emax (mJ)
ILmax (A)
TJstart = 150°C
10
TJstart = 25°C
TJstart = 150°C
TJstart = 150°C
100
1
1
1
10
TIME IN CLAMP (ms)
TIME IN CLAMP (ms)
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
Figure 5. Single−Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
25
20
6V
7V
8V
9V
−40°C
VDS = 10 V
10 V
20
25°C
15
5V
4V
15
ID (A)
ID (A)
10
Ta = 25°C
10
100°C
10
150°C
3V
5
5
VGS = 2.5 V
0
0
0
1
2
3
4
5
1.0
1.5
2.0
2.5
3.0
3.5
VDS (V)
VGS (V)
Figure 6. On−state Output Characteristics
Figure 7. Transfer Characteristics
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4
4.0
NCV8403A, NCV8403B
TYPICAL PERFORMANCE CURVES
100
150
ID = 3 A
150°C, VGS = 5 V
90
150°C
125
RDS(on) (mW)
RDS(on) (mW)
80
100
100°C
75
25°C
150°C, VGS = 10 V
70
100°C, VGS = 5 V
100°C, VGS = 10 V
60
25°C, VGS = 5 V
50
25°C, VGS = 10 V
40
50
−40°C, VGS = 5 V
30
−40°C
−40°C, VGS = 10 V
7
9
8
10
20
25
3
4
5
6
7
8
9
10
1
3
2
5
4
6
VGS (V)
ID (A)
Figure 8. RDS(on) vs. Gate−Source Voltage
Figure 9. RDS(on) vs. Drain Current
25
2.00
−40°C
ID = 5 A
20
25°C
1.50
ILIM (A)
NORMALIZED RDS(on)
1.75
1.25
VGS = 5 V
15
100°C
1.00
150°C
10
VGS = 10 V
0.75
VDS = 10 V
0.50
−40 −20
5
0
20
60
40
80
100
120
140
5
7
8
9
T (°C)
VGS (V)
Figure 10. Normalized RDS(on) vs. Temperature
Figure 11. Current Limit vs. Gate−Source
Voltage
25
10
100
VGS = 0 V
VDS = 10 V
10
VGS = 10 V
150°C
20
1
VGS = 5 V
IDSS (mA)
ILIM (A)
6
15
0.1
100°C
0.01
25°C
0.001
10
−40°C
0.0001
5
−40 −20
0.00001
0
20
40
60
80
100
120
140
10
15
20
25
30
35
TJ (°C)
VDS (V)
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain−to−Source Leakage Current
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5
40
NCV8403A, NCV8403B
TYPICAL PERFORMANCE CURVES
1.0
ID = 1.2 mA
VDS = VGS
1.1
0.9
−40°C
0.8
25°C
0.7
100°C
0.6
150°C
1.0
VSD (V)
NORMALIZED VGS(th) (V)
1.2
0.9
0.8
0.7
VGS = 0 V
0.5
0.6
−40 −20
0
20
40
80
60
100
120 140
1
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
td(off)
tf
tr
td(on)
4
5
6
7
8
9
10
7
9
8
10
3.0
VDD = 25 V
ID = 5 A
RG = 0 W
2.5
−dVDS/dt(on)
2.0
1.5
1.0
dVDS/dt(off)
0.5
0
3
4
5
6
7
8
9
10
VGS (V)
VGS (V)
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage
100
td(off), VGS = 10 V
75
VDD = 25 V
ID = 5 A
td(off), VGS = 5 V
50
tf, VGS = 5 V
tf, VGS = 10 V
tr, VGS = 5 V
td(on), VGS = 5 V td(on), VGS = 10 V
tr, VGS = 10 V
0
500
1000
1500
2000
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
TIME (ms)
100
50
TIME (ms)
6
Figure 15. Source−Drain Diode Forward
Characteristics
150
0
5
Figure 14. Normalized Threshold Voltage vs.
Temperature
200
25
4
IS (A)
VDD = 25 V
ID = 5 A
RG = 0 W
3
3
T (°C)
250
0
2
2.50
−dVDS/dt(on), VGS = 10 V
2.25
2.00
VDD = 25 V
ID = 5 A
1.75
1.50
1.25
dVDS/dt(off), VGS = 5 V
1.00
dVDS/dt(off), VGS = 10 V
0.75
−dVDS/dt(on), VGS = 5 V
0.50
0
500
1000
1500
2000
RG (W)
RG (W)
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
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6
NCV8403A, NCV8403B
150
150
125
125
RqJA (°C/W)
RqJA (°C/W)
TYPICAL PERFORMANCE CURVES
100
PCB Cu thickness, 1.0 oz
75
100
75
PCB Cu thickness, 2.0 oz
PCB Cu thickness, 1.0 oz
50
50
25
25
PCB Cu thickness, 2.0 oz
0
100
200
300
400
500
600
700
800
0
100
200
300
400
500
600
700
COPPER HEAT SPREADER AREA (mm2)
COPPER HEAT SPREADER AREA (mm2)
Figure 20. RqJA vs. Copper Area − SOT−223
Figure 21. RqJA vs. Copper Area − DPAK
800
1000
R(t) °C/W
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
0.01
Single Pulse
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
10
100
1000
PULSE TIME (sec)
Figure 22. Transient Thermal Resistance − SOT−223 Version
100
50% Duty Cycle
R(t) °C/W
10
20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 23. Transient Thermal Resistance − DPAK Version
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7
NCV8403A, NCV8403B
TEST CIRCUITS AND WAVEFORMS
RL
VIN
+
D
RG
VDD
G DUT
−
S
IDS
Figure 24. Resistive Load Switching Test Circuit
90%
10%
VIN
td(ON)
tr
td(OFF)
tf
90%
10%
IDS
Figure 25. Resistive Load Switching Waveforms
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8
NCV8403A, NCV8403B
TEST CIRCUITS AND WAVEFORMS
L
VDS
VIN
D
RG
+
VDD
G DUT
−
S
tp
IDS
Figure 26. Inductive Load Switching Test Circuit
5V
VIN
0V
Tav
Tp
V(BR)DSS
Ipk
VDD
VDS
VDS(on)
IDS
0
Figure 27. Inductive Load Switching Waveforms
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9
NCV8403A, NCV8403B
ORDERING INFORMATION
Package
Shipping†
NCV8403ASTT1G
SOT−223
(Pb−Free)
1000 / Tape & Reel
NCV8403ASTT3G
SOT−223
(Pb−Free)
4000 / Tape & Reel
NCV8403ADTRKG
DPAK
(Pb−Free)
2500 / Tape & Reel
NCV8403BDTRKG
DPAK
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
10
NCV8403A, NCV8403B
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
1
2
3
b
e1
e
0.08 (0003)
A1
C
q
A
q
L
STYLE 3:
PIN 1.
2.
3.
4.
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
GATE
DRAIN
SOURCE
DRAIN
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
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11
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
−
10°
mm Ǔ
ǒinches
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
NCV8403A, NCV8403B
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
A
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
C
A
b3
B
c2
4
L3
Z
D
1
2
H
DETAIL A
3
L4
NOTE 7
c
SIDE VIEW
b2
e
b
TOP VIEW
0.005 (0.13)
M
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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