AP9972GS/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Single Drive Requirement ▼ Surface Mount Package BVDSS 60V RDS(ON) 18mΩ ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-263(S) The TO-263 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9972GP) are available for low-profile applications. G Absolute Maximum Ratings Parameter Symbol D TO-220(P) S Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±25 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 60 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 38 A 1 IDM Pulsed Drain Current 230 A PD@TC=25℃ Total Power Dissipation 89 W 0.7 W/℃ Linear Derating Factor 3 EAS Single Pulse Avalanche Energy 450 mJ IAR Avalanche Current3 30 A TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 1.4 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W Data and specifications subject to change without notice 1 200803183 AP9972GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 60 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.06 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=35A - - 18 mΩ VGS=4.5V, ID=25A - - 22 mΩ VGS=0V, ID=250uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=35A - 55 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=48V ,VGS=0V - - 25 uA Gate-Source Leakage VGS=±25V - - ±100 nA ID=35A - 32 51 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 8 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 20 - nC VDS=30V - 11 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=35A - 58 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 45 - ns tf Fall Time RD=0.86Ω - 80 - ns Ciss Input Capacitance VGS=0V - 3170 5070 pF Coss Output Capacitance VDS=25V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 230 - pF Rg Gate Resistance f=1.0MHz - 1.7 - Ω Min. Typ. IS=35A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=35A, VGS=0V, - 50 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 48 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2 AP9972GS/P 200 150 10V 7.0V 150 ID , Drain Current (A) ID , Drain Current (A) 10V 7.0V 5.0V 100 4.5V 5.0V 100 4.5V 50 50 V G =3.0V o T C = 150 C V G =3.0V o T C =25 C 0 0 0 2 4 6 8 10 12 0 14 2 4 6 8 10 12 14 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 20 I D = 25 A T C =25 o C I D =35A V G =10V Normalized RDS(ON) 1.4 RDS(ON) (mΩ) 18 16 1.2 1.0 0.8 14 0.6 2 4 6 8 10 -50 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 20 1.7 IS(A) T j =150 o C Normalized VGS(th) (V) 15 T j =25 o C 10 1.2 0.7 5 0 0.2 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9972GS/P f=1.0MHz 12 10000 C iss V DS =48V V DS =38V V DS =30V 8 C (pF) VGS , Gate to Source Voltage (V) I D = 35 A 10 6 1000 4 C oss C rss 2 100 0 0 20 40 1 60 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 Normalized Thermal Response (Rthjc) 1 100 ID (A) 100us 1ms 10ms 10 T C =25 o C Single Pulse 100ms DC Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 1 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 100 VG V DS =5V ID , Drain Current (A) 80 T j =25 o C QG T j =150 o C 4.5V 60 QGS QGD 40 20 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220 E1 A E Millimeters SYMBOLS φ L2 MIN NOM MAX A 4.25 4.48 4.70 b b1 c c1 0.65 0.80 0.90 1.15 1.38 1.60 0.40 0.50 0.60 1.00 1.20 1.40 E 9.70 10.00 10.40 E1 --- --- 11.50 L1 L5 c1 D L4 b1 L3 L c b e ---- 2.54 ---- L 12.70 13.60 14.50 L1 2.60 2.80 3.00 L2 1.00 1.40 1.80 L3 2.6 3.10 3.6 L4 14.70 15.50 16 L5 6.30 6.50 6.70 φ 3.50 3.60 3.70 D 8.40 8.90 9.40 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-220 Part Number Package Code 9972GP meet Rohs requirement LOGO YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-263 E SYMBOLS MIN NOM MAX A 4.25 4.75 5.20 A1 0.00 0.15 0.30 A2 2.20 2.45 2.70 b 0.70 0.90 1.10 b1 1.07 1.27 1.47 c 0.30 0.45 0.60 D c1 1.15 1.30 1.45 D 8.30 8.90 9.40 E 9.70 10.10 10.50 e 2.04 2.54 3.04 L2 ----- 1.50 ----- L3 4.50 4.90 5.30 L4 ----- 1.50 ---- b1 L2 L3 b e L4 Millimeters A A2 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. c θ c1 A1 Part Marking Information & Packing : TO-263 Part Number Package Code XXXXXS 9972GS meet Rohs requirement YWWSSS LOGO Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 6