RoHS RoHS N-80EPU12 Series SEMICONDUCTOR Nell High Power Products FRED Ultrafast Soft Recovery Diode, 80 A FEATURES N-80APU12 N-80EPU12 Ultrafast recovery 175 °C operating junction temperature Designed and qualified for industrial level - BENEFITS Cathode to base Reduced RFI and EMI Cathode to base 2 Higher frequency operation 2 Reduced snubbing Reduced parts count 1 Cathode DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. 3 Anode 3 Anode 1 Anode TO-247AC modified TO-247AB PRODUCT SUMMARY trr 35 ns IF(AV) 80 A VR 1200 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Continuous forward current lF(AV) Single pulse forward current Maximum repetitive forward current ELECTRICAL SPECIFICATIONS Breakdown voltage, blocking voltage Forward voltage VF Reverse leakage current lR Junction capacitance CT UNITS 1200 V 80 lFSM TC = 25 °C 610 lFRM Square wave, 20 kHz 129 A - 55 to 175 °C (TJ = 25 ºC unless otherwise specified) SYMBOL V BR, Vr VALUES TC = 110 °C T j , T Stg Operating junction and storage temperatures PARAMETER TEST CONDITIONS VR Cathode to anode voltage TEST CONDITIONS MIN. TYP. MAX. 1200 - - l F = 80A - 2.8 3.3 l F = 160A - 3.3 - l F = 80A, T J = 125°C - 2.1 - l R = 100µA V R = V R rated - - 100 T J = 150°C, V R = V R rated - - 500 V R = 200V - 50 - Page 1 of 6 UNITS V µA pF N-80EPU12 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products DYNAMIC RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time SYMBOL trr (TJ = 25 ºC unless otherwise specified) TEST CONDITIONS MIN. TYP. MAX. I F = 0.5A, I R = 1A, I RR =0.25A - 35 40 I F = 1A, dI F /dt = 100 A/µs, V R =30V - 30 - T J = 25°C - 330 - - 430 - T J = 125°C Peak recovery current lRRM Reverse recovery charge Qrr IF = 80 A dIF/dt = 200 A/µs VR = 800 V UNITS ns - 5 - - 13 - T J = 25°C - 740 - T J = 125°C - 3450 - MIN. TYP. MAX. - - 0.3 - 0.39 - - 5.9 - - 0.22 - oz. - 1.2 (10) N⋅ m (lbf . in) T J = 25°C T J = 125°C A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, case to heatsink RthCS TEST CONDITIONS Mounting surface, flat, smooth and greased Weight Marking device °C/W 0.6 (5) Mounting torque Case style TO-247AC modified 80EPU12 Case style TO-247AC 80APU12 Page 2 of 6 UNITS g N-80EPU12 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration thermal impedance- Z θJC (°C/W) 0.35 0.30 D = 0.9 0.25 0.7 0.20 0.5 Note: P DM 0.15 0.3 0.10 t2 Duty Factor D = t 1 /t 2 Peak T J = P DM x Z θJC + T C 0.1 0.05 t1 Single pulse 0.05 0 10-5 10-4 10-3 10-2 10-1 1 Rectangular pulse duration (seconds) Fig3. Reverse recovery time vs. current rate of change Fig.2 Forward current vs. forward voltage 500 Reverse recovery time-t rr (ns) 200 Forward current-l F (A) 180 160 T J = 175°C 140 120 T J = 125°C 100 80 60 T J = 25°C 40 T J = -55°C T J = 125°C V R = 800V 400 160A 300 200 80A 40A 100 20 0 0 0 1 3 2 0 4 Anode-to-cathode voltage-V F (V) Fig.4 Reverse recovery charge vs. current rate of change 7000 V R = 800V 6000 80A 5000 4000 600 800 1000 1200 Fig.5 Reverse recovery current vs. current rate of change 50 160A T J = 125°C 400 Current rate of change-di F /dt(A/µs) Reverse recovery current-l RRM (A) Reverse recovery charge-Q rr (nC) 8000 200 40A 3000 2000 1000 0 T J = 125°C 160A V R = 800V 80A 40A 40 30 20 10 0 0 200 400 600 800 1000 1200 Current rate of change-di F /dt(A/µs) Page 3 of 6 0 200 400 600 800 1000 1200 Current rate of change-di F /dt(A/µs) N-80EPU12 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.7 Maximum average forward current vs. case temperature 1.2 140 1 120 Duty cycle = 0.5 T J = 175°C 100 0.8 l F(AV) (A) Dynamic parameters-K f (Normalized to 1000A/µs ) Fig.6 Dynamic parameters vs. junction temperature t rr 0.6 l RRM 80 60 0.4 40 Q rr 0.2 20 0 0 0 25 75 50 100 125 150 25 Junction temperature-T J (°C) 75 50 100 125 Case temperature (°C) Fig.8 Junction capacitance vs. reverse voltage Junction capacitance-C J (pF) 350 300 250 200 150 100 50 0 1 10 100 200 Reverse voltage-V R (V) Ordering Information Tabel Device code N 150 - 80 E P U 2 3 4 5 1 1 - Nell 2 - Current rating 3 - Single Diode 4 - TO-247AC (Modified) 5 - Ultrafast Recovery 6 - Voltage Rating (12 = 1200 V) 12 (80 = 80A) Page 4 of 6 E = 2 pins A = 3 pins 175 N-80EPU12 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.9 Reverse recovery parameter test circuit Fig.10 Reverse recovery waveform and definitions Page 5 of 6 N-80EPU12 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Outine Table N-80EPU12 Outine Table N-80APU12 Page 6 of 6