Preliminary HS5758-10A GaN Hybrid Power Amplifier Product Features Applications • GaN on SiC HEMT • In/Out Impedance Matching • Surface Mount Hybrid Type • Small Size & Mass • High Efficiency • Low Cost • Custom design available • Fixed Wireless, Wimax • ISM Band Package Type : NP-26 Description The HS5758-10A is designed for 802.16 WiMAX system application frequencies from 5725 ~ 5875MHz. This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power Density. Electrical Specifications @ Vds =28V, Ta=25°C PARAMETER UNIT MIN TYP MAX CONDITION Frequency Range MHz 5725 - 5875 ZS = ZL = 50 ohm - 18.5 - - - ±1 - - - - -5 - - 41 - Out power at Sat Power Gain Gain Flatness dB Input Return Loss dBm Pout dBm - 32 - Out power at 3% EVM Drain Efficiency % - 45 - - - 50 - Idq mA - 120 - Quiescent Current - - 1200 Ids mA Idq1 Idq2 Saturated Current Caution The drain voltage must be supplied to the device after the gate voltage is supplied Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies Turn off : Turn off the Drain Voltage and last turn off the Gate voltage Note 802.16 OFDM, 3.5MHz Channel BW, 64QAM, 5mS Burst, Symbol Length of 59, PAR 9.8 @ 0.01% Mechanical Specifications PARAMETER UNIT TYP REMARK Mass g 2 - Dimension ㎜ 20.5 x 15 x 4.8 - Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 1/6 Version 0.2 Preliminary HS5758-10A GaN Hybrid Power Amplifier Absolute Maximum Ratings PARAMETER UNIT RATING SYMBOL Gate-Source Voltage V -10 ~ 0 Vgs1 Vgs2 Drain-Source Voltage V 84 Vds Gate Current mA 5.7 Ig Operating Junction Temperature °C 225 TJ Operating Case Temperature °C -40 ~ 85 TC Storage Temperature °C -40 ~ 100 TSTG Operating Voltages PARAMETER UNIT MIN TYP MAX SYMBOL Drain Voltage V - 28 - Vds Gate Voltage (on-stage) V - Vgs1@Idq1 -2 Vgs 1 Gate Voltage (on-stage) V - Vgs2@Idq2 -2 Vgs 2 Gate Voltage (off-stage) V - -8 - Vgs 1 Gate Voltage (off-stage) V - -8 - Vgs 2 Block Diagram Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 2/6 Version 0.2 Preliminary HS5758-10A GaN Hybrid Power Amplifier Application Circuit Input_50ohm Output_50ohm 1 4 HS5758-10A 2 5 3 6 Vgs1 Vds + _ _ 10uF/16V (Tantal) + 10uF/50V (Tantal) Vgs2 + _ 10uF/16V (Tantal) Performance Charts * Bias condition @ Idq1 50mA, Idq2 120 mA, Vds =+28V, Ta=25℃ Saturation Power & Ids vs. Frequency Saturation Power & PAE vs. Frequency Power Gain @ Psat vs. Frequency EVM vs. Pout, Frequency=5.725GHz Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 3/6 Version 0.2 Preliminary GaN Hybrid Power Amplifier HS5758-10A Package Dimensions (Type: NP-26) * Unit: mm[inch] | Tolerance: ±0.15[.006] ▲ Top View ▲ Side View ▲ Bottom View Pin Description Pin No Function Pin No Function Pin No Function Pin No Function 1 RF Input 2 Vgs1 4 RF Output 5 Vdd2 3 Vgs2 6 Vdd1 Recommended Pattern * Mounting Configuration Notes 1. Ground / thermal via holes are critical for the proper performance of this device. 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via hole region contacts the heatsink. 4. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink. 5. RF trace width depends upon the PCB material and construction. 6. Use 1 oz. Copper minimum. Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 4/6 Version 0.2 Preliminary GaN Hybrid Power Amplifier HS5758-10A Precautions This product is a Gallium Nitride Transistor. The Gallium Nitride Transistor requires a Negative Voltage Bias which operates alongside a Positive Voltage Bias. These Biases are applied in accordance to the Sequence during Turn-On and Turn-Off. The Pallet Amplifier does not have a built-in Bias Sequence Circuit. Therefore, users need to either apply positive voltages and negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier. The required sequence for power supply is as follows. During Turn-On 1. Connect GND. 2. Apply Vgs1 and Vgs2. 3. Apply Vds. 4. Apply the RF Power. During Turn-Off 1. Turn off RF power. 2. Turn off Vds, and then, turn off the Vgs1 and Vgs2. 3. Remove all connections. Turn On Turn Off - Sequence Timing Diagram - Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 5/6 Version 0.2 Preliminary GaN Hybrid Power Amplifier HS5758-10A Reflow Profile * Reflow oven settings Zone A B C D E F Temperature(°C) 30 ~ 150 ℃ 150 ~ 180 ℃ 180 ~ 220 ℃ 220 ~ 220 ℃ 235 ~ 240 ℃ 2 ~ 6 ℃/ Sec Drop Belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * Measured reflow profile Ordering Information Part Number Package Design -R (Reel) HS5758-10A -B (Bulk) -EVB (Evaluation Board) Revision History Part Number Release Date Version Modification Data Sheet Status HS5758-10A 2012.11.28 0.2 New datasheet format. Preliminary HS5758-10A 2012.2.18 0.1 - Preliminary RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at 919677-8780. For all other inquiries, please contact the International Sales Team at 82-31-250-5078. Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 6/6 Version 0.2