MITSUBISHI IGBT MODULES CM600HN-5F HIGH POWER SWITCHING USE INSULATED TYPE H G E F D J W - DIA. (4 TYP.) K y P Q E C E x N M L G C B A R U - THD. (2 TYP.) V -THD. (2 TYP.) S T Features: ⵧ Low Drive Power ⵧ Low VCE(sat) ⵧ Discrete Super-Fast Recovery Free-Wheel Diodes ⵧ High Frequency Operation ⵧ Isolated Baseplate for Easy Heat Sinking C E E G Applications: ⵧ UPS ⵧ Forklift Outline Drawing and Circuit Diagram Dimensions Inches Millimeters 108.0 Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration, with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Dimensions Inches Millimeters N 0.39 10.0 P 0.39 10.0 Ordering Information: Example: Select the complete nine digit module part number you desire from the table below - i.e. CM600HN-5F is a 250V (VCES), 600 Ampere Single IGBT Module. A 4.25 B 3.66 C 0.63 16.0 Q 0.51 13.0 D 0.30 7.5 R 0.33 8.5 E 0.69 17.5 S 1.42 36.0 –0.5 F 1.14 29.0 T 1.02 25.8 –0.5 Type Current Rating Amperes VCES Volts (x 50) G 0.79 20.0 U M6 Metric M6 CM 600 5 H 0.94 24.0 V M4 Metric M4 93.0±0.25 +1.0 +1.0 J 0.31 7.9 W 0.26 Dia. 6.5 K 0.24 6.0 X 0.79 20.0 L 2.44 62.0 Y 0.35 9.0 M 1.89 48.0 Mar.2002 MITSUBISHI IGBT MODULES CM600HN-5F HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Symbol Ratings Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 250 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts Collector Current (TC = 25°C) Peak Collector Current (Tj ≤ 150°C) IC 600 Amperes ICM 1200 Amperes Emitter Current** (TC = 25°C) IE 600 Amperes Peak Emitter Current** IEM 1200 Amperes Maximum Collector Dissipation (TC = 25°C) Pc 1780 Watts Mounting Torque, M6 Main Terminal — 1.96 ~ 2.94 N·m Mounting Torque, M6 Mounting — 1.96 ~ 2.94 N·m Mounting Torque, M4 Terminal — 0.98 ~ 1.47 N·m — 400 Grams Viso 2500 Vrms Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 3.0 4.0 5.0 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Current IC = 600A, VGE = 10V, — 1.2 1.7** Volts IC = 600A, VGE = 10V, Tj = 150°C — 1.1 — Volts Total Gate Charge QG VCC = 100V, IC = 600A, VGE = 10V — 2200 — nC Emitter-Collector Voltage VEC IE = 600A, VGE = 0V — — 2.0 Volts Min. Typ. Max. Units — — 165 nF — — 7.5 nF — — 5.6 nF — — 1000 ns — — 4000 ns — — 1000 ns — — 500 ns ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switching Turn-off Delay Time Times Fall Time tr td(off) tf Test Conditions VGE = 0V, VCE = 10V VCC = 100V, IC = 600A, VGE1 = VGE2 = 10V, RG = 4.2Ω, Resistive Load Diode Reverse Recovery Time trr IE = 600A, diE/dt = -1200A/µs — — 300 ns Diode Reverse Recovery Charge Qrr IE = 600A, diE/dt = -1200A/µs — 9.5 — µC Thermal and Mechanical Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT — — 0.07 °C/W Thermal Resistance, Junction to Case Rth(j-c) Free Wheel Diode — — 0.11 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied — — 0.040 °C/W Mar.2002 MITSUBISHI IGBT MODULES CM600HN-5F HIGH POWER SWITCHING USE INSULATED TYPE 1200 10 8 6 1000 VGE = 15V 5.5 800 600 5.25 400 5.0 200 4.5 1000 800 600 400 200 4.75 0 1 2 3 4 5 1.5 1.0 0.5 0 0 2 4 6 8 0 10 200 400 600 800 1000 1200 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 5 103 Tj = 25°C IC = 600A 2 IC = 1200A 1 IC = 240A 5 10 102 15 0.8 1.0 1.2 1.4 1.6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, t rr, (ns) VCC = 100V VGE = ±10V RG = 4.2Ω Tj = 125°C td(off) td(on) 103 tf 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 Coes di/dt = -1200A/µsec Tj = 25°C t rr Irr 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 103 102 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 tr 102 101 100 10-1 1.8 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 104 Cies 102 Cres 101 0.6 0 0 CAPACITANCE, Cies, Coes, Cres, (nF) 3 103 101 103 20 IC = 600A GATE-EMITTER VOLTAGE, VGE, (VOLTS) 4 VGE = 0V REVERSE RECOVERY CURRENT, Irr, (AMPERES) EMITTER CURRENT, IE, (AMPERES) Tj = 25°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 15V Tj = 25°C Tj = 125°C 0 0 SWITCHING TIME, (ns) 2.0 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5.75 Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 1200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VCC = 50V 15 VCC = 100V 10 5 0 0 1 2 3 4 5 GATE CHARGE, QG, (nC) Mar.2002 MITSUBISHI IGBT MODULES CM600HN-5F HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.07°C/W 100 10-1 10-2 10-3 10-3 10-2 10-1 TIME, (s) 100 101 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.11°C/W 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 TIME, (s) Mar.2002