NIEC GSH10A10B Schottky barrier diode Datasheet

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T y p e : GSH10
SH10A
10A10B
OULINE DRAWING
FEATURES
*Similar to TO-220AB Case
*Low Forward Voltage Drop
*Low Power Loss,High Efficiency
*High Surge Capability
*Tj=150 °C operation
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Approx Net Weight: 1.9g
Symbol
VRRM
Average Rectified Output Current
IO
RMS Forward Current
IF(RMS)
Surge Forward Current
IFSM
Operating JunctionTemperature Range
Storage Temperature Range
Mounting torque
Tjw
Tstg
Ftor
Unit
GSH10A10B
10
180
V
100
50 Hz half Sine Wave
Tc=120°C
Resistive Load
15.7
50Hz Half Sine Wave ,1cycle
Non-repetitive
-40 to +150
-40 to +150
recommended torque = 0.5
°C
°C
N•m
Conditions
Unit
A
A
A
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance
Symbol
IRM
Tj= 25°C, VRM= VRRM
VFM
Tj= 25°C, IFM= 10 A
Rth(j-c) Junction to Case
Min.
-
Typ. Max.
-
1
0.88
3
mA
V
°C /W
GSH_B_ OUTLINE DRAWING (Dimensions in mm)
FORWARD CURRENT VS. VOLTAGE
GSH10A10/GSH10A10B
INSTANTANEOUS FORWARD CURRENT (A)
50
20
Tj=25°C
Tj=150°C
10
5
2
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE (V)
0°
θ
180°
AVERAGE FORWARD POWER DISSIPATION
CONDUCTION ANGLE
GSH10A10/GSH10A10B
AVERAGE FORWARD POWER DISSIPATION (W)
12
D.C.
10
RECT 180°
HALF SINE WAVE
RECT 120°
8
RECT 60°
6
4
2
0
0
4
8
AVERAGE FORWARD CURRENT (A)
12
16
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
Tj= 150 °C
GSH10A10/GSH10A10B
PEAK REVERSE CURRENT (mA)
50
20
10
5
0
20
40
60
80
100
120
PEAK REVERSE VOLTAGE (V)
AVERAGE REVERSE POWER DISSIPATION
GSH10A10/GSH10A10B
AVERAGE REVERSE POWER DISSIPATION (W)
3.5
3.0
D.C.
2.5
RECT 300°
2.0
RECT 240°
1.5
RECT 180°
1.0
HALF SINE WAVE
0.5
0
0
20
40
60
REVERSE VOLTAGE (V)
80
100
120
0°
θ
180°
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
CONDUCTION ANGLE
V R M= 100V
GSH10A10/GSH10A10B
D.C.
AVERAGE FORWARD CURRENT (A)
16
12
RECT 180°
HALF SINE WAVE
RECT 120°
8
RECT 60°
4
0
0
25
50
75
100
125
150
CASE TEMPERATURE (°C)
SURGE CURRENT RATINGS
f=50Hz,Half Sine Wave,Non-Repetitive,No Load
GSH10A10/GSH10A10B
SURGE FORWARD CURRENT (A)
200
160
120
80
40
I FSM
0.02s
0
0.02
0.05
0.1
0.2
TIME (s)
0.5
1
2
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
Tj=2 5° C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue
GSH10A10/GSH10A10B
JUNCTION CAPACITANCE (pF)
500
200
100
50
0.5
1
2
5
10
20
REVERSE VOLTAGE (V)
50
100
200
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