EM MICROELECTRONIC - MARIN SA EM5060 Low Voltage CMOS Driver Circuit Features • • • • • • • Functional Diagram Four low resistance output drivers for bipolar or unipolar watch stepping motors. Low transversal transition current. Very low current consumption: 0.1 µA at 25°C. Two different output resistances programmable by metal mask. Wide power supply voltage range: 1.1 to 3.5 V. Tristate input for applications as fast bus driver. ESD and latch-up protections on input and output pads. Rch =200Ω Rch =200Ω M M OUT1 OUT2 OUT3 OUT4 VDD EM5060 V1 VSS IN2 IN4 HIZ Description The EM5060 (previously named H5060) is a low power integrated circuit in HCMOS Silicon Gate Technology designed to drive bipolar or unipolar stepping motors. This device contains four identical and independent noninverting circuits which can be connected by metal mask programation so as to obtain two identical non-inverting circuits with a lower resistance output. Each buffer is driven by a special cell which dephases the P and N transistor signal input, for a minimization of the transversal transition current. A tristate input HIZ, with internal pulldown resistor provides the high impedance state of the four outputs. IN1 IN3 Rch =200Ω M OUT1 OUT2 VDD VSS EM5060 V2 Application • • • Motor driver for watch/clock application Bus drivers LED driver HIZ IN1 IN2 Fig. 1 Pin Assignment Pad OUT4 OUT3 OUT2 OUT1 VDD HIZ IN1 IN2 IN3 IN4 VSS Function Output buffer n°4 Output buffer n°3 Output buffer n°2 Output buffer n°1 Positive supply voltage Tri state input Input buffer n°1 Input buffer n°2 Input buffer n°3 Input buffer n°4 Negative supply voltage VDD NC OUT1 OUT2 NC VDD OUT1 OUT2 OUT3 OUT4 EM5060 V1 HIZ IN1 IN2 IN3 IN4 VSS EM5060 V2 HIZ NC IN1 IN2 NC VSS Fig. 2 Copyright 2002, EM Microelectronic-Marin SA 1 www.emmicroelectronic.com EM5060 Absolute Maximum Ratings Parameter Supply Voltage Voltage at remaining pin Storage temperature Symbol Min VDD Vpin Tstore Handling Procedures Typ Max Unit -0.3 VSS-0.3 5.5 VDD+0.3 V V -55 +120 °C Table 1 Stresses above these listed maximum ratings may cause permanent damage to the device. Exposure to conditions beyond specified electrical characteristics may affect device reliability or cause malfunction. This device contains circuitry to protect the terminals against damage due to high static voltages or electrical fields. However, it is advised that normal precautions be taken to avoid application of any voltage higher than minimum rated voltages to this circuit. Operating Conditions Parameter Operating temperature Symbol Min Topr -20 Typ Max Units +70 °C Table 3 Recommended Operating Conditions Parameter Ambient temperature Motor resistance Positive supply Negative supply Supply source resistance Symbol Value Units T Rch VDD VSS RI 25 200 1.55 0.0 10 °C Ohms V V Ohms Table 2 Electrical and Switching Characteristics at recommended operating conditions (valid unless otherwise specified) Parameter Supply voltage Standby current Symbol VDD Inputs Pulse width Voltage HIZ Input Current Outputs Motor Output Current Timing Characteristics Propagation delay Transition time tWL tWH VIL VIH IHIZ IOUT tPHL tPLH tTHL tTLH Conditions Operating Imot = 0 IN1, IN2, IN3, IN4 at VDD or VSS HIZ at VSS or open Min. 1.1 VDD = 1.2 V VIL = VSS VIH = VDD Overall voltage range Typ. 1.55 Max. 3.5 100 1 1 HIZ at VDD Rch = 200 Ω,VDD = 1.2 V Version V1 Version V2 VDD = 1.50 V Version V1 Version V2 VDD =3.0 V Version V1 Version V2 VDD = 1.2 V,CL = 30pF VDD = 1.2 V,CL = 30pF VDD = 1.2 V,CL = 30pF VDD = 1.2 V,CL = 30pF Unit V nA ms ms V V VSS VDD 0.4 VDD-0.3 0.5 2 5 ±4.3 ±4.8 ±5.0 mA mA ±6.0 ±6.4 ±6.6 mA mA ±13.0 ±13.3 ±13.5 mA mA 5 5 3 3 100 100 100 100 µA µs µs µs µs Table 4 Copyright 2002, EM Microelectronic-Marin SA 2 www.emmicroelectronic.com EM5060 Timing Waveforms IN t VGP t VGN t OUT t : HIGH IMPEDANCE OUTPUT Fig. 3 Block Diagram Version V1 Version V2 IN1 Anti-current inverter OUT1 IN1 Anti-current inverter OUT1 IN2 Anti-current inverter OUT2 IN2 Anti-current inverter OUT2 IN3 Anti-current inverter OUT3 IN4 Anti-current inverter OUT4 Fig. 4 Copyright 2002, EM Microelectronic-Marin SA 3 www.emmicroelectronic.com EM5060 Functional Description VDD VGP ANTI-CURRENT VGN INVERTER In Out VSS Fig. 5 NC X=1066 OUT2 X=819 OUT1 X=541 NC X=294 VSS X=1082, Y=0 NC X=837 X=-160 Y=-171 IN2 X=590 EM5060 H5060V2 v2 IN1 X=312 VSS X=1082, Y=0 IN4 X=837 VDD X=19, Y=98 OUT4 X=1066 OUT2 X=541 OUT3 X=819 IN3 X=590 IN2 X=312 IN1 X=65 X=-160 Y=-171 HIZ X=0, Y=508 EM5060 v1 V1 H5060 NC X=65 HIZ X=0, Y=508 OUT1 X=294 VDD X=19, Y=980 Chip Information NOTE: The origin (0,0) is the lower left coordinate of center pads The lower left corner of the chip shows distances N.C. Not connected All dimensions in microns Fig. 6 Ordering Information EM5060 is available in two versions: • Version V1 contains four input/outputs (INPUTS = IN1, IN2, IN3, IN4 ; OUTPUTS = OUT1, OUT2, OUT3, OUT4). • Version V2 contains two input/outputs (INPUTS = IN1, IN2 ; OUTPUTS = OUT1, OUT2). When ordering, please specify the complete Part Number below. Part Number EM5060V1WP11 EM5060V1WS11 EM5060V2WP11 EM5060V2WS11 Version V1 V1 V2 V2 Die & Delivery Form Die in waffle pack, 11 mils thickness Sawn wafer, 11 mils thickness Die in waffle pack, 11 mils thickness Sawn wafer, 11 mils thickness EM Microelectronic-Marin SA cannot assume responsibility for use of any circuitry described other than circuitry entirely embodied in an EM Microelectronic-Marin SA product EM Microelectronic-Marin SA reserves the right to change the specifications without notice at any time. You are strongly urged to ensure that the information given has not been superseded by a more up to date version. © 2002 EM Microelectronic-Marin SA, 05/02 Rev. B/481 Copyright 2002, EM Microelectronic-Marin SA 4 www.emmicroelectronic.com