IRF IRF7307 Power mosfet Datasheet

PD - 9.1242B
IRF7307
HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
l Dual N and P Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
l
l
S1
G1
S2
G2
N -C H AN N EL M O SF ET
1
8
2
7
3
6
4
5
D1
N-Ch
P-Ch
20V
-20V
D1
VDSS
D2
D2
P-C H AN N E L M OS FE T
RDS(on) 0.050Ω 0.090Ω
T op V iew
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ,TSTG
10 Sec. Pulse Drain Current, VGS @ 4.5V
Continuous Drain Current, V GS @ 4.5V
Continuous Drain Current, V GS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
N-Channel
P-Channel
5.7
5.2
4.1
21
-4.7
-4.3
-3.4
-17
2.0
0.016
± 12
5.0
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient„
Typ.
Max.
Units
–––
62.5
°C/W
8/25/97
IRF7307
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V (BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
RDS(ON)
Static Drain-to-Source On-Resistance
P-Ch
V GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
LS
Internal Drain Inductace
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max.
20
—
—
-20 —
—
— 0.044 —
— -0.012 —
—
— 0.050
—
— 0.070
—
— 0.090
—
— 0.140
0.70 —
—
-0.70 —
—
8.30 —
—
4.00 —
—
—
— 1.0
—
— -1.0
—
—
25
—
— -25
––
— ±100
—
—
20
—
—
22
—
— 2.2
—
— 3.3
—
— 8.0
—
— 9.0
— 9.0
—
— 8.4
—
—
42
—
—
26
—
—
32
—
—
51
—
—
51
—
—
33
—
— 4.0
—
— 6.0
—
— 660 —
— 610 —
— 280 —
— 310 —
— 140 —
— 170 —
Units
V
V/°C
Ω
V
S
µA
Conditions
VGS = 0V, I D = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 4.5V, ID = 2.6A ƒ
VGS = 2.7V, ID = 2.2A ƒ
VGS = -4.5V, I D = -2.2A ƒ
VGS = -2.7V, I D = -1.8A ƒ
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 15V, ID = 2.6A ƒ
VDS = -15V, ID = -2.2A ƒ
VDS = 16V, V GS = 0V
VDS = -16V, VGS = 0V,
VDS = 16V, VGS = 0V, TJ = 125°C
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = ± 12V
N-Channel
ID = 2.6A, VDS = 16V, V GS = 4.5V
nC
ƒ
P-Channel
ID = -2.2A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 2.6A, RG = 6.0Ω,
RD = 3.8Ω
ns
ƒ
P-Channel
VDD = -10V, ID = -2.2A, RG = 6.0Ω,
RD = 4.5Ω
nH
Between lead tip
and center of die contact
N-Channel
VGS = 0V, V DS = 15V, ƒ = 1.0MHz
pF
ƒ
P-Channel
VGS = 0V, V DS = -15V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode) 
V SD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
Min. Typ. Max. Units
Conditions
—
— 2.5
—
— -2.5
A
—
—
21
—
— -17
—
— 1.0
TJ = 25°C, IS = 1.8A, VGS = 0V ƒ
V
—
— -1.0
TJ = 25°C, IS = -1.8A, VGS = 0V ƒ
—
29
44
N-Channel
ns
—
56
84
T J = 25°C, IF = 2.6A, di/dt = 100A/µs
—
22
33
P-Channel
ƒ
nC
—
71 110
T J = 25°C, IF = -2.2A, di/dt = 100A/µs
Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
‚ N-Channel ISD ≤ 2.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS , TJ ≤ 150°C
P-Channel ISD ≤ -2.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.
IRF7307
N-Channel
1000
1000
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
B OTTOM 1.5V
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
B OTTOM 1.5V
TOP
I , Drain- to-S ourc e C urrent ( A)
D
I , Dr ain-to-Sou rce Cur rent ( A)
D
TOP
100
10
10
1 .5V
20µ s P U LS E W ID T H
T J = 25 °C
A
1.5 V
1
0.1
100
1
10
20 µs P U LS E W ID T H
T J = 15 0° C
A
1
0.1
100
Fig 1. Typical Output Characteristics
2.0
R D S(on) , Dr ain- to-S ource O n Res istanc e
(Norm alized)
I D , D ra in -to -S ou rc e C ur r en t ( A )
TJ = 25 ° C
TJ = 1 50 ° C
10
V D S = 1 5V
20 µ s PU LS E W ID T H
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.5
1.0
0.5
0.0
-60 -40 -20
A
10
0V ,
f = 1M H z
C g s + C g d , C d s SH O R T E D
C gd
C ds + C g d
C is s
600
C os s
C rs s
300
0
A
1
10
V D S , Drain -to -S ourc e Voltage (V )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
40
60
80
A
100 120 140 160
Fig 4. Normalized On-Resistance
Vs. Temperature
V G S , G ate- to- Sour ce V oltage (V )
C , Capac itanc e (pF)
900
=
=
=
=
V G S = 4.5 V
0
TJ , J unction Tem perature (°C )
Fig 3. Typical Transfer Characteristics
V GS
C is s
C rs s
C os s
100
I D = 4 .3A
V GS , G a te - to -S o ur c e V olta ge (V )
1200
10
Fig 2. Typical Output Characteristics
100
1
1
V DS , D rain- to- So urc e V oltage (V )
V DS , D rain-to- So urc e V oltage (V )
100
I D = 2 .6A
V D S = 16 V
8
6
4
2
F O R TE S T C IR C U IT
S E E F I GU R E 11
0
0
5
10
15
20
Q G , Tota l G ate C har ge (nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
A
25
IRF7307
N-Channel
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D, Drain Current (A)
I SD , R e v er s e D ra in C u rre n t (A )
100
10
TJ = 150° C
TJ = 25°C
1
0.0
0.5
1.0
1.5
2.0
10
1ms
TA = 25 °C
TJ = 150 °C
Single Pulse
V G S = 0V
0.1
100us
1
0.1
A
1
2.5
100
Fig 8. Maximum Safe Operating Area
RD
VDS
6.0
VGS
5.0
ID , Drain Current (A)
10
VDS, Drain-to-Source Voltage (V)
V SD , Sour ce-to-Dr ain Voltage ( V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
10ms
D.U.T.
RG
4.0
3.0
+
V
- DD
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
1.0
Fig 10a. Switching Time Test Circuit
0.0
25
50
75
100
TC , Case Temperature
125
150
( °C)
VDS
90%
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Current Regulator
Same Type as D.U.T.
10%
VGS
td(on)
tr
t d(off)
tf
50KΩ
12V
Fig 10b. Switching Time Waveforms
.2µF
.3µF
D.U.T.
+
V
- DS
QG
4.5V
VGS
QGS
QGD
3mA
VG
IG
ID
Current Sampling Resistors
Fig 11a. Gate Charge Test Circuit
Charge
Fig 11b. Basic Gate Charge Waveform
IRF7307
P-Channel
100
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
B OTTOM - 1.5 V
VGS
- 7.5V
- 5. 0V
- 4. 0V
- 3. 5V
- 3. 0V
- 2. 5V
- 2. 0V
BOTTOM - 1. 5V
TOP
- ID , Dr ain- to-S ource Current (A)
-I D , Drain- to-S ourc e Current (A )
TOP
10
1
-1.5 V
20µ s P U LS E W ID T H
TJ = 25 °C
0.1
0.01
0.1
1
10
A
10
1
-1.5V
20µ s PU L SE W ID T H
T J = 150° C
0.1
0.01
100
0.1
-V DS , Dra in-to-S ourc e Vo ltage ( V)
Fig 12. Typical Output Characteristics
R DS(on) , Drain- to- Sour ce O n R esis tanc e
(Nor malized)
- I D , D r ai n- to- S ou rc e C u r re n t ( A )
TJ = 2 5 °C
TJ = 1 5 0 °C
1
V D S = - 15 V
2 0µ s P U L S E W ID T H
0.1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1.5
1.0
0.5
V G S = -4 .5V
-60
10
0V,
f = 1 MHz
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd
C is s
1000
Co s s
C rs s
500
0
A
1
10
-20
0
20
40
60
80
100
120
140
160
A
Fig 15. Normalized On-Resistance
Vs. Temperature
-V GS , G a t e-t o -S ou rc e V o lt a ge (V )
C, C apacitance (pF)
=
=
=
=
-40
T J , J unc tion Tem per ature (°C )
-VG S , G a te -to -S ou rc e V olta ge (V )
V GS
C is s
C rs s
C os s
A
100
I D = -3. 6A
0.0
A
Fig 14. Typical Transfer Characteristics
1500
10
Fig 13. Typical Output Characteristics
2.0
100
10
1
-VDS , D rain-to-S ourc e Voltage (V)
100
-V D S , Drain- to -So urc e V oltage ( V)
Fig 16. Typical Capacitance Vs.
Drain-to-Source Voltage
I D = -2.2A
V D S = -16 V
8
6
4
2
FO R TE ST C IR C U IT
SE E F IG U R E 2 2
0
0
5
10
15
20
A
25
Q G , Total G ate Charge ( nC)
Fig 17. Typical Gate Charge Vs.
Gate-to-Source Voltage
IRF7307
P-Channel
100
100
10
-II D, Drain Current (A)
-I SD , R e v e rs e D ra in C u rre n t (A )
OPERATION IN THIS AREA LIMITED
BY RDS(on)
T J = 150°C
TJ = 25° C
1
VG S = 0 V
0.1
0.3
0.6
0.9
1.2
10
1ms
1
A
10ms
TA = 25 °C
TJ = 150 °C
Single Pulse
1
10
1.5
100
-V DS, Drain-to-Source Voltage (V)
- VSD , Sour ce-to-Drain V oltage (V)
Fig 18. Typical Source-Drain Diode
Forward Voltage
Fig 19. Maximum Safe Operating Area
RD
VDS
5.0
VGS
D.U.T.
4.0
-I D, Drain Current (A)
RG
+
3.0
VDD
-4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
1.0
Fig 21a. Switching Time Test Circuit
0.0
25
50
100
125
T C, Case Temperature
75
( °C)
150
VDS
90%
Fig 20. Maximum Drain Current Vs.
Ambient Temperature
Current Regulator
Same Type as D.U.T.
10%
VGS
td(on)
tr
t d(off)
tf
50KΩ
12V
Fig 21b. Switching Time Waveforms
.2µF
.3µF
D.U.T.
+VDS
QG
-4.5V
VGS
QGS
QGD
-3mA
VG
IG
ID
Current Sampling Resistors
Fig 22a. Gate Charge Test Circuit
Charge
Fig 22b. Basic Gate Charge Waveform
IRF7307
N & P-Channel
(Z thJA )
100
D = 0.50
0.20
10
Thermal Response
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7307
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+
**

• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS*
+
-
*
VDD
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[ VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 24. For N and P Channel HEXFETS
[ ISD]
IRF7307
Package Outline
SO-8 Outline
Dimensions are shown in millimeters (inches)
DIM
D
-B-
5
8
E
-A-
1
7
2
6
3
5
H
0.25 (.010)
4
e
6X
M
A M
A
-C-
0.10 (.004)
A1
B 8X
0.25 (.010)
A
MIN
1.35
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
e1
θ
L
8X
6
C
8X
MAX
1.75
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
K
.011
.019
0.28
0.48
L
0.16
.050
0.41
1.27
8°
0°
8°
θ
M C A S B S
MILLIMETERS
MAX
.0688
e
K x 45°
e1
INCHES
MIN
.0532
5
0°
6.20
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
0.72 (.028 )
8X
6.46 ( .255 )
1.78 (.070)
8X
1.27 ( .050 )
3X
Part Marking Information
SO-8
E X A M P LE : TH IS IS A N IR F 7 101
3 12
IN T E R N A TI ON A L
R E C T IF IE R
LO G O
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
XX X X
F 7 101
T OP
PART NUMBER
W AFER
LO T C O D E
(LA S T 4 D IG IT S )
B O T TO M
IRF7307
Tape & Reel Information
SO-8
Dimensions are shown in millimeters (inches)
2.0 5 (.08 0)
1.9 5 (.07 7)
T ERM INAT IO N
N UM BE R 1
1.85 (.072)
4.10 (.161)
1.65 (.065)
3.90 (.154)
1.60 ( .062)
1.50 ( .059)
0.35 ( .013)
0.25 ( .010)
5.55 (.218)
5.45 (.215)
1
F EE D DIR ECT IO N
5.30 (.208)
5.10 (.201)
12.30 (.484)
11.70 (.461)
2.60 (.102)
1.50 (.059)
8.10 ( .318)
7.90 ( .311)
2.20 (.086)
2.00 (.079)
6.50 ( .255)
6.30 ( .248)
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
2
50.0 0
(1.969)
MIN.
330.00
( 13.000)
MAX .
18.40 (.724)
M AX 3
NO TE S:
1 C ON FO RM S T O E IA- 481- 1
2 INCLUDES F LANG E DIST O RT IO N @ OU TE R E DGE
14.40 ( .566)
12.40 ( .448)
3
3 D IME NS IO NS MEA SURE D @ HUB
4 C ON TRO LLING DIME NSIO N : MET RIC
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http://www.irf.com/
Data and specifications subject to change without notice.
8/97