NCP114 300 mA CMOS Low Dropout Regulator The NCP114 is 300 mA LDO that provides the engineer with a very stable, accurate voltage with low noise suitable for space constrained, noise sensitive applications. In order to optimize performance for battery operated portable applications, the NCP114 employs the dynamic quiescent current adjustment for very low IQ consumption at no−load. www.onsemi.com MARKING DIAGRAMS Features • Operating Input Voltage Range: 1.7 V to 5.5 V • Available in Fixed Voltage Options: 0.75 V to 3.6 V • • • • • • • • • UDFN4 MX SUFFIX CASE 517CU 1 Contact Factory for Other Voltage Options Very Low Quiescent Current of Typ. 50 mA Standby Current Consumption: Typ. 0.1 mA Low Dropout: 135 mV Typical at 300 mA ±1% Accuracy at Room Temperature High Power Supply Ripple Rejection: 75 dB at 1 kHz Thermal Shutdown and Current Limit Protections Stable with a 1 mF Ceramic Output Capacitor Available in UDFN and TSOP Packages These are Pb−Free Devices XX M 1 XX = Specific Device Code M = Date Code 5 TSOP−5 SN SUFFIX CASE 483 XX M G G 1 XX = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. Typical Applicaitons • • • • PDAs, Mobile phones, GPS, Smartphones Wireless Handsets, Wireless LAN, Bluetooth®, Zigbee® Portable Medical Equipment Other Battery Powered Applications PIN CONNECTIONS VIN EN IN 3 4 2 1 VOUT IN OUT NCP114 CIN EN ON GND OFF COUT 1 mF Ceramic GND OUT (Bottom View) Figure 1. Typical Application Schematic IN 1 GND 2 EN 3 5 OUT 4 N/C (Top View) ORDERING INFORMATION This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. © Semiconductor Components Industries, LLC, 2016 June, 2016 − Rev. 21 1 See detailed ordering, marking and shipping information on page 14 of this data sheet. Publication Order Number: NCP114/D NCP114 IN ENABLE LOGIC EN THERMAL SHUTDOWN BANDGAP REFERENCE MOSFET DRIVER WITH CURRENT LIMIT OUT AUTO LOW POWER MODE ACTIVE DISCHARGE* EN GND *Active output discharge function is present only in NCP114AMXyyyTCG devices. yyy denotes the particular VOUT option. Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. (UDFN4) Pin No. (TSOP5) Pin Name Description 1 5 OUT Regulated output voltage pin. A small ceramic capacitor with minimum value of 1 mF is needed from this pin to ground to assure stability. 2 2 GND Power supply ground. 3 3 EN Driving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts the regulator into shutdown mode. 4 1 IN Input pin. A small capacitor is needed from this pin to ground to assure stability. − 4 N/C − − EPAD Not connected. This pin can be tied to ground to improve thermal dissipation. Exposed pad should be connected directly to the GND pin. Soldered to a large ground copper plane allows for effective heat removal. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN −0.3 V to 6 V V Output Voltage VOUT −0.3 V to VIN + 0.3 V or 6 V V Enable Input VEN −0.3 V to VIN + 0.3 V or 6 V V Input Voltage (Note 1) tSC ∞ s TJ(MAX) 150 °C TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Output Short Circuit Duration Maximum Junction Temperature Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114, ESD Machine Model tested per EIA/JESD22−A115, Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS (Note 3) Rating Symbol Value Unit Thermal Characteristics, UDFN4 1x1 mm Thermal Resistance, Junction−to−Air RqJA 170 °C/W Thermal Characteristics, TSOP−5 Thermal Resistance, Junction−to−Air RqJA 236 °C/W 3. Single component mounted on 1 oz, FR 4 PCB with 645 mm2 Cu area. www.onsemi.com 2 NCP114 ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 85°C; VIN = VOUT(NOM) + 1 V for VOUT options greater than 1.5 V. Otherwise VIN = 2.5 V, whichever is greater; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise noted. VEN = 0.9 V. Typical values are at TJ = +25°C. Min./Max. are for TJ = −40°C and TJ = +85°C respectively (Note 4). Parameter Test Conditions Operating Input Voltage Output Voltage Accuracy Line Regulation −40°C ≤ TJ ≤ 85°C VOUT ≤ 2.0 V Symbol Min VIN VOUT VOUT > 2.0 V VOUT + 0.5 V ≤ VIN ≤ 5.5 V (VIN ≥ 1.7 V) Max Unit 1.7 5.5 V −40 +40 mV −2 +2 % 0.01 0.1 %/V 12 30 mV 28 45 RegLINE Load Regulation − UDFN package Load Regulation − TSOP−5 package Load Transient Dropout Voltage − UDFN package (Note 5) Dropout Voltage − TSOP package (Note 5) IOUT = 1 mA to 300 mA RegLOAD IOUT = 1 mA to 300 mA or 300 mA to 1 mA in 1 ms, COUT = 1 mF TranLOAD 460 VOUT = 1.85 V 245 330 155 230 145 220 VOUT = 3.1 V 140 210 VOUT = 3.3 V 135 200 VOUT = 1.5 V 380 485 VOUT = 1.85 V 260 355 170 255 160 245 155 235 150 225 VOUT = 2.8 V VOUT = 3.0 V VDO VDO VOUT = 3.1 V VOUT = 3.3 V Output Current Limit mV 365 VOUT = 3.0 V IOUT = 300 mA −50/ +30 VOUT = 1.5 V VOUT = 2.8 V IOUT = 300 mA Typ ICL IOUT = 0 mA IQ 50 95 mA Shutdown Current VEN ≤ 0.4 V, VIN = 5.5 V IDIS 0.01 1 mA EN Pin Threshold Voltage High Threshold Low Threshold VEN Voltage increasing VEN Voltage decreasing VEN_HI VEN_LO EN Pin Input Current 600 mV VOUT = 90% VOUT(nom) Ground Current 300 mV mA V VEN = 5.5 V 0.4 1.0 mA IEN 0.3 PSRR 75 dB VN 70 mVrms Power Supply Rejection Ratio VIN = 3.6 V, VOUT = 3.1 V IOUT = 150 mA Output Noise Voltage VIN = 2.5 V, VOUT = 1.8 V, IOUT = 150 mA f = 10 Hz to 100 kHz Thermal Shutdown Temperature Temperature increasing from TJ = +25°C TSD 160 °C Temperature falling from TSD TSDH 20 °C VEN < 0.4 V, Version A only RDIS 100 W Thermal Shutdown Hysteresis Active Output Discharge Resistance f = 1 kHz 0.9 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 1 V. www.onsemi.com 3 NCP114 TYPICAL CHARACTERISTICS 1.210 2.83 IOUT = 1 mA 2.82 VOUT, OUTPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) 1.205 1.200 1.195 IOUT = 300 mA 1.190 1.185 1.180 1.175 VIN = 2.5 V VOUT = 1.2 V CIN = 1 mF COUT = 1 mF 1.170 1.165 1.160 −40 −30 −20 −10 0 10 20 30 40 2.80 2.78 2.77 2.76 2.74 2.73 −40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Output Voltage vs. Temperature VOUT = 1.2 V Figure 4. Output Voltage vs. Temperature VOUT = 2.8 V 1000 70 IGND, GROUND CURRENT (mA) IQ, QUIESCENT CURRENT (mA) VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF COUT = 1 mF 2.75 50 60 70 80 90 −40°C 60 85°C 50 25°C 40 30 20 VOUT = 2.8 V CIN = 1 mF COUT = 1 mF 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 900 800 700 VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF COUT = 1 mF 600 500 400 300 200 85°C 25°C −40°C 100 0 0.001 0.01 0.1 1 10 100 1000 VIN, INPUT VOLTAGE (V) IOUT, OUTPUT CURRENT (mA) Figure 5. Quiescent Current vs. Input Voltage Figure 6. Ground Current vs. Output Current 1000 0.1 900 IOUT = 300 mA 800 VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF COUT = 1 mF 700 600 500 400 300 200 IOUT = 1 mA 100 0 −40 −30 −20 −10 0 10 20 30 40 50 60 70 REGLINE, LINE REGULATION (%/V) IGND, GROUND CURRENT (mA) IOUT = 300 mA 2.79 80 0 0.0 IOUT = 1 mA 2.81 80 90 0.08 0.06 0.04 0.02 0 −0.02 −0.04 −0.06 −0.08 −1 −40 −30 −20 −10 0 VIN = 1.7 V to 5.5 V VOUT = 1.2 V IOUT = 1 mA CIN = 1 mF COUT = 1 mF 10 20 30 40 50 60 70 80 90 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Ground Current vs. Temperature Figure 8. Line Regulation vs. Output Current VOUT = 1.2 V www.onsemi.com 4 NCP114 TYPICAL CHARACTERISTICS 20 REGLOAD, LOAD REGULATION (mV) REGLINE, LINE REGULATION (%/V) 0.1 0.08 0.06 0.04 0.02 0 −0.02 VIN = 3.8 V to 5.5 V VOUT = 2.8 V IOUT = 1 mA CIN = 1 mF COUT = 1 mF −0.04 −0.06 −0.08 −0.1 −40 −30 −20 −10 0 10 20 30 40 14 12 10 8 VIN = 2.5 V VOUT = 1.2 V IOUT = 1 mA to 300 mA CIN = 1 mF COUT = 1 mF 6 4 2 10 20 30 40 50 60 70 80 90 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Line Regulation vs. Temperature VOUT = 2.8 V Figure 10. Load Regulation vs. Temperature VOUT = 1.2 V 200 VDROP, DROPOUT VOLTAGE (mV) REGLOAD, LOAD REGULATION (mV) 16 0 −40 −30 −20 −10 0 50 60 70 80 90 20 18 16 14 12 10 8 VIN = 3.8 V VOUT = 2.8 V IOUT = 1 mA to 300 mA CIN = 1 mF COUT = 1 mF 6 4 2 0 −40 −30 −20 −10 0 10 20 30 40 200 175 160 140 120 TJ = 85°C 100 TJ = −40°C 80 60 VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF COUT = 1 mF 40 TJ = 25°C 20 0 50 60 70 80 90 50 100 150 200 250 300 TJ, JUNCTION TEMPERATURE (°C) IOUT, OUTPUT CURRENT (mA) Figure 11. Load Regulation vs. Temperature VOUT = 2.8 V Figure 12. Dropout Voltage vs. Output Current VOUT = 2.8 V 800 VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF COUT = 1 mF 750 ICL, CURRENT LIMIT (mA) 225 180 0 250 VDROP, DROPOUT VOLTAGE (mV) 18 IOUT = 300 mA 150 125 100 75 IOUT = 100 mA 50 IOUT = 0 mA 25 700 650 VOUT = 2.8 V 600 VOUT = 1.2 V 550 500 450 400 350 0 −40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 300 −40 −30 −20 −10 0 VIN = VOUT(nom) + 1 V or 2.5 V VOUT = 90% VOUT(nom) CIN = 1 mF COUT = 1 mF 10 20 30 40 50 60 70 80 90 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 13. Dropout Voltage vs. Temperature Figure 14. Dropout Voltage vs. Temperature www.onsemi.com 5 NCP114 ISC, SHORT−CIRCUIT CURRENT (mA) 800 750 700 VOUT = 2.8 V 650 VOUT = 1.2 V 600 550 500 450 VIN = VOUT(nom) + 1 V or 2.5 V VOUT = 0 V CIN = 1 mF COUT = 1 mF 400 350 300 −40 −30 −20 −10 0 10 20 30 40 800 750 700 650 600 550 500 450 VOUT = 0 V CIN = 1 mF COUT = 1 mF 400 350 300 50 60 70 80 90 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 TJ, JUNCTION TEMPERATURE (°C) VIN, INPUT VOLTAGE (V) Figure 15. Short−Circuit Current vs. Temperature Figure 16. Short−Circuit Current vs. Input Voltage 350 0.9 315 0.8 IEN, ENABLE CURRENT (nA) 1 OFF −> ON 0.7 0.6 ON −> OFF 0.5 0.4 0.3 VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF COUT = 1 mF 0.2 0.1 0 −40 −30 −20 −10 0 10 20 30 40 VEN = 5.5 V 280 245 210 VEN = 0.4 V 175 140 105 35 0 −40 −30 −20 −10 0 50 60 70 80 90 VIN = 5.5 V VOUT = 2.8 V CIN = 1 mF COUT = 1 mF 70 10 20 30 40 50 60 70 80 90 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 17. Enable Voltage Threshold vs. Temperature Figure 18. Current to Enable Pin vs. Temperature 100 IDIS, DISABLE CURRENT (nA) VEN, VOLTAGE ON ENABLE PIN (V) ISC, SHORT−CIRCUIT CURRENT (mA) TYPICAL CHARACTERISTICS 80 60 40 20 0 −20 −40 VIN = 5.5 V VOUT = 2.8 V CIN = 1 mF COUT = 1 mF −60 −80 −100 −40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 TJ, JUNCTION TEMPERATURE (°C) Figure 19. Disable Current vs. Temperature www.onsemi.com 6 NCP114 TYPICAL CHARACTERISTICS OUTPUT VOLTAGE NOISE (nV/rtHz) 10000 IOUT = 300 mA 1000 IOUT 100 10 VIN = 2.5 V VOUT = 1.2 V CIN = 1 mF COUT = 1 mF 1 0.01 0.1 IOUT = 10 mA RMS Output Noise (mV) 10 Hz − 100 kHz 100 Hz − 100 kHz 1 mA 60.93 59.11 10 mA 52.73 50.63 300 mA 52.06 50.17 IOUT = 1 mA 1 100 10 1000 FREQUENCY (kHz) Figure 20. Output Voltage Noise Spectral Density for VOUT = 1.2 V, COUT = 1 mF OUTPUT VOLTAGE NOISE (nV/rtHz) 10000 IOUT = 300 mA 1000 IOUT 100 10 IOUT = 10 mA VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF COUT = 1 mF 1 0.01 0.1 RMS Output Noise (mV) 10 Hz − 100 kHz 100 Hz − 100 kHz 74.66 1 mA 79.23 10 mA 75.03 70.37 300 mA 87.74 83.79 IOUT = 1 mA 1 10 100 1000 FREQUENCY (kHz) Figure 21. Output Voltage Noise Spectral Density for VOUT = 2.8 V, COUT = 1 mF OUTPUT VOLTAGE NOISE (nV/rtHz) 10000 IOUT = 300 mA 1000 IOUT 100 10 1 mA VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF COUT = 4.7 mF 1 0.01 0.1 RMS Output Noise (mV) 10 Hz − 100 kHz 100 Hz − 100 kHz 80.17 75.29 10 mA 81.28 76.46 300 mA 93.23 89.62 IOUT = 10 mA IOUT = 1 mA 1 10 100 1000 FREQUENCY (kHz) Figure 22. Output Voltage Noise Spectral Density for VOUT = 2.8 V, COUT = 4.7 mF www.onsemi.com 7 NCP114 TYPICAL CHARACTERISTICS 100 RR, RIPPLE REJECTION (dB) 80 70 60 50 40 30 IOUT = 1 mA IOUT = 10 mA IOUT = 150 mA IOUT = 300 mA 20 10 0 0.1 1 VIN = 3.8 V, VOUT = 2.8 V CIN = none, COUT = 4.7 mF MLCC, X7R, 1206 size 90 80 70 60 50 40 30 IOUT = 1 mA IOUT = 10 mA IOUT = 150 mA IOUT = 300 mA 20 10 0 10 100 1000 10000 0.1 1 10 100 1000 10000 FREQUENCY (kHz) FREQUENCY (kHz) Figure 23. Power Supply Rejection Ratio, VOUT = 2.8 V, COUT = 1 mF Figure 24. Power Supply Rejection Ratio, VOUT = 2.8 V, COUT = 4.7 mF 100 10 UNSTABLE OPERATION ESR (W) RR, RIPPLE REJECTION (dB) 100 VIN = 3.8 V, VOUT = 2.8 V CIN = none, COUT = 1 mF MLCC, X7R, 1206 size 90 1 STABLE OPERATION VIN = 5.5 V CIN = 1 mF COUT = 1 mF MLCC, X7R, 1206 size 0.1 0.01 0 50 100 150 200 250 IOUT, OUTPUT CURRENT (mA) Figure 25. Output Capacitor ESR vs. Output Current www.onsemi.com 8 300 NCP114 VOUT IINRUSH VOUT 40 ms/div 40 ms/div 1 V/div VOUT VIN = 3.8 V VOUT = 2.8 V VEN = 1 V COUT = 1 mF CIN = 1 mF IOUT = 300 mA VEN IINRUSH VOUT 40 ms/div 40 ms/div Figure 28. Enable Turn−on Response, COUT = 4.7 mF, IOUT = 1 mA Figure 29. Enable Turn−on Response, COUT = 4.7 mF, IOUT = 300 mA tRISE = 1 ms 500 mV/div VIN VIN = 3.8 V to 4.8 V VOUT = 2.8 V COUT = 1 mF CIN = 1 mF IOUT = 1 mA VOUT 10 mV/div 1 V/div 500 mV/div 500 mV/div VIN = 3.8 V VOUT = 2.8 V VEN = 1 V COUT = 1 mF CIN = 1 mF IOUT = 1 mA IINRUSH 10 mV/div Figure 27. Enable Turn−on Response, COUT = 1 mF, IOUT = 300 mA 200 mA/div 500 mV/div Figure 26. Enable Turn−on Response, COUT = 1 mF, IOUT = 1 mA VEN 200 mA/div VEN 1 V/div 1 V/div IINRUSH VIN = 3.8 V VOUT = 2.8 V VEN = 1 V COUT = 1 mF CIN = 1 mF IOUT = 300 mA VIN tFALL = 1 ms VIN = 4.8 V to 3.8 V VOUT = 2.8 V COUT = 1 mF CIN = 1 mF IOUT = 1 mA VOUT 20 ms/div 10 ms/div Figure 30. Line Transient Response − Rising Edge, VOUT = 2.8 V, IOUT = 1 mA Figure 31. Line Transient Response − Falling Edge, VOUT = 2.8 V, IOUT = 1 mA www.onsemi.com 9 200 mA/div VEN 500 mV/div VIN = 3.8 V VOUT = 2.8 V VEN = 1 V COUT = 1 mF CIN = 1 mF IOUT = 1 mA 200 mA/div 500 mV/div TYPICAL CHARACTERISTICS NCP114 500 mV/div tRISE = 1 ms 20 mV/div VIN VIN = 3.8 V to 4.8 V VOUT = 2.8 V COUT = 10 mF CIN = 1 mF IOUT = 300 mA VOUT VIN tFALL = 1 ms VIN = 4.8 V to 3.8 V VOUT = 2.8 V COUT = 1 mF CIN = 1 mF IOUT = 300 mA VOUT 4 ms/div Figure 33. Line Transient Response − Falling Edge, VOUT = 2.8 V, IOUT = 300 mA 100 mA/div 4 ms/div Figure 32. Line Transient Response − Rising Edge, VOUT = 2.8 V, IOUT = 300 mA 100 mA/div 20 mV/div 500 mV/div TYPICAL CHARACTERISTICS VIN = 2.5 V VOUT = 1.2 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) IOUT IOUT tFALL = 1 ms VIN = 2.5 V VOUT = 1.2 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) tRISE = 1 ms COUT = 1 mF 20 mV/div COUT = 4.7 mF COUT = 4.7 mF COUT = 1 mF VOUT 4 ms/div 20 ms/div Figure 34. Load Transient Response − Rising Edge, VOUT = 1.2 V, IOUT = 1 mA to 300 mA, COUT = 1 mF, 4.7 mF Figure 35. Load Transient Response − Falling Edge, VOUT = 1.2 V, IOUT = 1 mA to 300 mA, COUT = 1 mF, 4.7 mF IOUT tRISE = 1 ms IOUT VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 100 mA/div 100 mA/div 20 mV/div VOUT tFALL = 1 ms COUT = 1 mF COUT = 4.7 mF 20 mV/div 20 mV/div VOUT COUT = 1 mF VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) COUT = 4.7 mF VOUT 4 ms/div 10 ms/div Figure 36. Load Transient Response − Rising Edge, VOUT = 2.8 V, IOUT = 1 mA to 300 mA, COUT = 1 mF, 4.7 mF Figure 37. Load Transient Response − Falling Edge, VOUT = 2.8 V, IOUT = 1 mA to 300 mA, COUT = 1 mF, 4.7 mF www.onsemi.com 10 NCP114 IOUT VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) IOUT 100 mA/div 100 mA/div TYPICAL CHARACTERISTICS tRISE = 1 ms tFALL = 1 ms VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) VIN = 3.8 V 20 mV/div VIN = 5.5 V VIN = 3.8 V VOUT VIN = 5.5 V 2 ms/div 10 ms/div Figure 38. Load Transient Response − Rising Edge, VOUT = 2.8 V, IOUT = 1 mA to 300 mA, VIN = 3.8 V, 5.5 V Figure 39. Load Transient Response − Falling Edge, VOUT = 2.8 V, IOUT = 1 mA to 300 mA, VIN = 3.8 V, 5.5 V VIN = 5.5 V VOUT = 2.8 V IOUT = 10 mA CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) VIN Full Load 200 mA/div 20 mV/div VOUT VOUT Overheating VIN = 5.5 V VOUT = 1.2 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) IOUT Thermal Shutdown 1 V/div 500 mA/div VOUT TSD Cycling 4 ms/div 10 ms/div Figure 40. Turn−on/off − Slow Rising VIN Figure 41. Short−Circuit and Thermal Shutdown www.onsemi.com 11 NCP114 APPLICATIONS INFORMATION General The NCP114 is a high performance 300 mA Low Dropout Linear Regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/line transients. In connection with very low quiescent current this device is very suitable for various battery powered applications such as tablets, cellular phones, wireless and many others. The device is fully protected in case of output overload, output short circuit condition and overheating, assuring a very robust design. disable state the device consumes as low as typ. 10 nA from the VIN. If the EN pin voltage >0.9 V the device is guaranteed to be enabled. The NCP114 regulates the output voltage and the active discharge transistor is turned−off. The EN pin has internal pull−down current source with typ. value of 300 nA which assures that the device is turned−off when the EN pin is not connected. In the case where the EN function isn’t required the EN should be tied directly to IN. Input Capacitor Selection (CIN) Output Current Limit It is recommended to connect at least a 1 mF Ceramic X5R or X7R capacitor as close as possible to the IN pin of the device. This capacitor will provide a low impedance path for unwanted AC signals or noise modulated onto constant input voltage. There is no requirement for the min. /max. ESR of the input capacitor but it is recommended to use ceramic capacitors for their low ESR and ESL. A good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. Larger input capacitor may be necessary if fast and large load transients are encountered in the application. Output Current is internally limited within the IC to a typical 600 mA. The NCP114 will source this amount of current measured with a voltage drops on the 90% of the nominal VOUT. If the Output Voltage is directly shorted to ground (VOUT = 0 V), the short circuit protection will limit the output current to 630 mA (typ). The current limit and short circuit protection will work properly over whole temperature range and also input voltage range. There is no limitation for the short circuit duration. Thermal Shutdown When the die temperature exceeds the Thermal Shutdown threshold (TSD − 160°C typical), Thermal Shutdown event is detected and the device is disabled. The IC will remain in this state until the die temperature decreases below the Thermal Shutdown Reset threshold (TSDU − 140°C typical). Once the IC temperature falls below the 140°C the LDO is enabled again. The thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. Output Decoupling (COUT) The NCP114 requires an output capacitor connected as close as possible to the output pin of the regulator. The recommended capacitor value is 1 mF and X7R or X5R dielectric due to its low capacitance variations over the specified temperature range. The NCP114 is designed to remain stable with minimum effective capacitance of 0.22mF to account for changes with temperature, DC bias and package size. Especially for small package size capacitors such as 0402 the effective capacitance drops rapidly with the applied DC bias. There is no requirement for the minimum value of Equivalent Series Resistance (ESR) for the COUT but the maximum value of ESR should be less than 2 W. Larger output capacitors and lower ESR could improve the load transient response or high frequency PSRR. It is not recommended to use tantalum capacitors on the output due to their large ESR. The equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. Power Dissipation As power dissipated in the NCP114 increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. The maximum power dissipation the NCP114 can handle is given by: Enable Operation P D(MAX) + The NCP114 uses the EN pin to enable/disable its device and to deactivate/activate the active discharge function. If the EN pin voltage is <0.4 V the device is guaranteed to be disabled. The pass transistor is turned−off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND through a 100 W resistor. In the ƪ125° C * T Aƫ q JA (eq. 1) The power dissipated by the NCP114 for given application conditions can be calculated from the following equations: P D [ V INǒI GND@I OUTǓ ) I OUTǒV IN * V OUTǓ www.onsemi.com 12 (eq. 2) NCP114 qJA, JUNCTION−TO−AMBIENT THERMAL RESISTANCE (°C/W) 240 PD(MAX), TA = 25°C, 2 oz Cu 0.9 220 PD(MAX), TA = 25°C, 1 oz Cu 200 180 0.8 0.7 qJA, 1 oz Cu 160 0.6 140 qJA, 2 oz Cu 0.5 120 100 0 100 200 300 400 500 600 PD(MAX), MAXIMUM POWER DISSIPATION (W) 1 260 0.4 700 COPPER HEAT SPREADER AREA (mm2) 450 0.9 400 0.75 350 PD(MAX), TA = 25°C, 2 oz Cu 300 PD(MAX), TA = 25°C, 1 oz Cu 250 qJA, 1 oz Cu 200 150 0 qJA, 2 oz Cu 100 200 300 400 500 600 0.6 0.45 0.3 0.15 PD(MAX), MAXIMUM POWER DISSIPATION (W) qJA, JUNCTION−TO−AMBIENT THERMAL RESISTANCE (°C/W) Figure 42. qJA vs. Copper Area (uDFN4) 0 700 COPPER HEAT SPREADER AREA (mm2) Figure 43. qJA vs. Copper Area (TSOP−5) Reverse Current nominal value. This time is dependent on various application conditions such as VOUT(NOM), COUT and TA. For example typical value for VOUT = 1.2 V, COUT = 1 mF, IOUT = 1 mA and TA = 25°C is 90 ms. The PMOS pass transistor has an inherent body diode which will be forward biased in the case that VOUT > VIN. Due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. PCB Layout Recommendations To obtain good transient performance and good regulation characteristics place CIN and COUT capacitors close to the device pins and make the PCB traces wide. In order to minimize the solution size, use 0402 capacitors. Larger copper area connected to the pins will also improve the device thermal resistance. The actual power dissipation can be calculated from the equation above (Equation 2). Expose pad should be tied the shortest path to the GND pin. Power Supply Rejection Ratio The NCP114 features very good Power Supply Rejection ratio. If desired the PSRR at higher frequencies in the range 100 kHz − 10 MHz can be tuned by the selection of COUT capacitor and proper PCB layout. Turn−On Time The turn−on time is defined as the time period from EN assertion to the point in which VOUT will reach 98% of its www.onsemi.com 13 NCP114 ORDERING INFORMATION Voltage Option Marking Marking Rotation NCP114AMX075TCG 0.75 V AW 0° NCP114AMX090TCG 0.9 V AP 0° NCP114AMX100TCG 1.0 V 6 180° NCP114AMX105TCG 1.05 V R 0° NCP114AMX110TBG 1.1 V F 180° Device NCP114AMX110TCG 1.1 V F 180° NCP114AMX115TCG 1.15 V AM 0° NCP114AMX120TBG 1.2 V T 0° NCP114AMX120TCG 1.2 V T 0° NCP114AMX125TCG 1.25 V A 180° NCP114AMX130TCG 1.3 V AA 0° NCP114AMX135TCG 1.35 V AN 0° NCP114AMX150TCG 1.5 V V 0° NCP114AMX160TCG 1.6 V 2 180° NCP114AMX180TBG 1.8 V J 180° NCP114AMX180TCG 1.8 V J 180° NCP114AMX185TCG 1.85 V Y 0° NCP114AMX210TCG 2.1 V L 180° NCP114AMX220TCG 2.2 V Q 180° NCP114AMX240TCG 2.4 V AH 0° NCP114AMX250TBG 2.5 V AF 0° NCP114AMX250TCG 2.5 V AF 0° NCP114AMX260TCG 2.6 V T 180° NCP114AMX270TCG 2.7 V AJ 0° NCP114AMX280TBG 2.8 V 2 0° NCP114AMX280TCG 2.8 V 2 0° NCP114AMX285TCG 2.85 V 3 0° NCP114AMX300TCG 3.0 V 4 0° NCP114AMX310TBG 3.1 V 5 0° NCP114AMX310TCG 3.1 V 5 0° NCP114AMX320TCG 3.2 V AG 0° NCP114AMX330TBG 3.3 V 6 0° NCP114AMX330TCG 3.3 V 6 0° NCP114AMX345TCG 3.45 V AC 0° NCP114AMX350TCG 3.5 V 4 180° NCP114AMX360TCG 3.6 V AU 0° NCP114BMX075TCG 0.75 V CW 0° NCP114BMX100TCG 1.0 V 6 270° NCP114BMX105TCG 1.05 V R 90° NCP114BMX110TCG 1.1 V F 270° NCP114BMX120TCG 1.2 V T 90° Option Package Shipping† uDFN4 (Pb-Free) 3000 / Tape & Reel With active output discharge function www.onsemi.com 14 NCP114 ORDERING INFORMATION Voltage Option Marking Marking Rotation NCP114BMX125TCG 1.25 V A 270° NCP114BMX130TCG 1.3 V CA 0° NCP114BMX150TCG 1.5 V V 90° NCP114BMX160TCG 1.6 V 2 270° NCP114BMX180TCG 1.8 V J 270° NCP114BMX185TCG 1.85 V Y 90° NCP114BMX210TCG 2.1 V L 270° NCP114BMX220TCG 2.2 V Q 270° NCP114BMX250TCG 2.5 V CF 0° NCP114BMX260TCG 2.8 V T 270° NCP114BMX280TCG 2.8 V 2 90° NCP114BMX285TCG 2.85 V 3 90° NCP114BMX300TCG 3.0 V 4 90° NCP114BMX310TCG 3.1 V 5 90° NCP114BMX330TCG 3.3 V 6 90° NCP114BMX345TCG 3.45 V CC 0° NCP114BMX350TCG 3.5 V 4 270° Device Option Package Shipping† Without active output discharge function †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ORDERING INFORMATION Device Voltage Option Marking NCP114ASN120T1G 1.2 V CAC NCP114ASN180T1G 1.8 V CAD NCP114ASN250T1G 2.5 V CAG NCP114ASN260T1G 2.6 V CAQ NCP114ASN270T1G (In Development) 2.7 V CAV NCP114ASN280T1G 2.8 V CAH NCP114ASN290T1G 2.9 V CAU NCP114ASN300T1G 3.0 V CAK NCP114ASN330T1G 3.3 V CAL NCP114BSN330T1G 3.3 V CDL Option With output active discharge function Package Shipping† TSOP−5 (Pb−Free) 3000 / Tape & Reel Without output active discharge †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 15 NCP114 PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE M NOTE 5 2X D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. 5X 0.20 C A B 0.10 T M 2X 0.20 T B 5 1 4 2 S 3 K B DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H SIDE VIEW C SEATING PLANE END VIEW MILLIMETERS MIN MAX 2.85 3.15 1.35 1.65 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 16 NCP114 PACKAGE DIMENSIONS UDFN4 1.0x1.0, 0.65P CASE 517CU ISSUE A A B D PIN ONE REFERENCE 2X 0.05 C 2X 0.05 C ÉÉ ÉÉ C0.27 x 0.25 E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.03 AND 0.07 FROM THE TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 3X C0.18 X 45 5 L2 DETAIL A DIM A A1 A3 b D D2 E e L L2 TOP VIEW A 0.10 C (A3) A1 0.05 C NOTE 4 C SIDE VIEW MILLIMETERS MIN MAX −−− 0.60 0.00 0.05 0.15 REF 0.20 0.30 1.00 BSC 0.38 0.58 1.00 BSC 0.65 BSC 0.20 0.30 0.27 0.37 SEATING PLANE RECOMMENDED MOUNTING FOOTPRINT* e e/2 DETAIL A 1 2 3X 2X 0.65 PITCH L 0.58 3X DETAIL B 0.43 PACKAGE OUTLINE D2 45 5 D2 4 4X 0.23 1.30 3 4X BOTTOM VIEW b 0.10 M C A B 0.05 M C 0.53 1 4X 0.30 NOTE 3 3X 0.10 DETAIL B DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Bluetooth is a registered trademark of Bluetooth SIG. 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