Hittite HMC154S8 Gaas mmic smt low distortion t/r switch, dc - 2.5 ghz Datasheet

HMC154S8 / 154S8E
v02.0805
GaAs MMIC SMT LOW DISTORTION
T/R SWITCH, DC - 2.5 GHz
Typical Applications
Features
The HMC154S8 / HMC154S8E is ideal for:
High Third Order Intercept: +60 dBm
• MMDS & WirelessLAN
Single Positive Supply: +3 to +10V
• Basestation Infrastructure
High RF Power Capability
• Portable Wireless
TTL/CMOS Control
Functional Diagram
General Description
The HMC154S8 & HMC154S8E are low-cost SPDT
switches in 8-lead SOIC packages for use in transmitreceive applications which require very low distortion
at high signal power levels. The device can control
signals from DC to 2.5 GHz and is especially suited for
900 MHz and 1.8 - 2.2 GHz applications. The design
provides exceptional intermodulation performance;
providing a +60dBm third order intercept at 8 Volt bias.
RF1 and RF2 are reflective shorts when “Off”. On-chip
circuitry allows single positive supply operation at very
low DC current with control inputs compatible with
CMOS and most TTL logic families.
SWITCHES - SMT
14
Electrical Specifications, TA = +25° C, Vdd = +5 Vdc, 50 Ohm System
Parameter
Min.
Typ.
Max.
Units
0.5
0.7
1.0
0.7
0.9
1.3
dB
dB
dB
Insertion Loss
Isolation
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
22
19
15
25
22
18
dB
dB
dB
Return Loss
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
20
14
10
30
18
13
dB
dB
dB
Input Power for 1 dB Compression
0/8V Control
0.5 - 1.0 GHz
0.5 - 2.0 GHz
35
34
39
38
dBm
dBm
Input Third Order Intercept
0/8V Control
0.5 - 1.0 GHz
0.5 - 2.0 GHz
55
54
60
60
dBm
dBm
10
24
ns
ns
Switching Characteristics
14 - 2
Frequency
DC - 1.0 GHz
DC - 2.0 GHz
DC - 2.5 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 2.5 GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC154S8 / 154S8E
v02.0805
GaAs MMIC SMT LOW DISTORTION
T/R SWITCH, DC - 2.5 GHz
Insertion Loss
Isolation
0
-1
-10
ISOLATION (dB)
INSERTION LOSS (dB)
0
-2
-3
-4
-5
-20
-30
-40
0
1
2
3
4
0
1
FREQUENCY (GHz)
2
3
FREQUENCY (GHz)
4
14
Return Loss
SWITCHES - SMT
RETURN LOSS (dB)
0
-10
-20
-30
-40
0
1
2
3
4
FREQUENCY (GHz)
Input Power for 0.1 and 1.0 dB
Compression vs. Bias Voltage
Input Third Order
Intercept vs. Bias Voltage
45
65
60
1db at 1900MHz
900MHz
40
IP3 (dBm)
COMPRESSION (dBm)
1dB at 900MHz
35
0.1dB at 900MHz
55
50
1900MHz
45
30
40
0.1dB at 1900MHz
35
25
2
4
6
8
BIAS (Volts)
10
12
2
4
6
8
BIAS (Volts)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
10
12
14 - 3
HMC154S8 / 154S8E
v02.0805
GaAs MMIC SMT LOW DISTORTION
T/R SWITCH, DC - 2.5 GHz
Compression vs. Bias Voltage
Carrier at 900 MHz
Carrier at 1900 MHz
Bias
Vdd
Input Power for
0.1 dB Compression
Input Power
for 1.0 dB
Compression
Input Power for
0.1 dB
Compression
Input Power
for 1.0 dB
Compression
(Volts)
(dBm)
(dBm)
(dBm)
(dBm)
30
3
27
31
26
4
30
34
29
33
5
32
36
31
35
8
36
39
35
38
10
37
40
36
39
Caution:
Do not operate in 1dB compression at power
levels above +35dBm and do not “hot switch”
power levels greater than +23dBm (Vdd = +5V).
Distortion vs. Bias Voltage
SWITCHES - SMT
14
14 - 4
1 Watt Carrier at 900 MHz
1 Watt Carrier at 1900 MHz
Second
Harmonic
Third
Order
Intercept
Second
Order
Intercept
Second
Harmonic
(dBm)
(dBc)
(dBm)
(dBm)
(dBc)
71
45
42
78
55
85
55
46
88
65
58
Bias
Vdd
Third
Order
Intercept
Second
Order
Intercept
(Volts)
(dBm)
3
43
4
48
5
53
90
56
51
87
8
60
90
58
60
90
59
10
60
90
59
60
90
60
Truth Table
*Control Input Voltage Tolerances are ± 0.2 Vdc.
Bias
Vdd (Vdc)
Control Input*
A
(Vdc)
Bias Current
Control Current
Control Current
B
(Vdc)
Idd
(uA)
Ia
(uA)
Ib
(uA)
Signal Path State
RF to RF1
RF to RF2
3
0
0
30
-15
-15
OFF
OFF
3
0
Vdd
25
-25
0
ON
OFF
3
Vdd
0
25
0
-25
OFF
ON
5
0
0
110
-55
-55
OFF
OFF
5
0
Vdd
115
-100
-15
ON
OFF
5
Vdd
0
115
-15
-100
OFF
ON
10
0
0
380
-190
-190
OFF
OFF
10
0
Vdd
495
-275
-220
ON
OFF
10
Vdd
0
495
-220
-275
OFF
ON
5
-Vdd
Vdd
600
-600
225
ON
OFF
5
Vdd
-Vdd
600
225
-600
OFF
ON
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC154S8 / 154S8E
v02.0805
GaAs MMIC SMT LOW DISTORTION
T/R SWITCH, DC - 2.5 GHz
Absolute Maximum Ratings
Bias Voltage Range (Vdd)
-0.2 to +12 Vdc
Control Voltage Range (A & B)
-0.2 to Vdd Vdc
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
SWITCHES - SMT
14
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC154S8
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC154S8E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
HMC154
XXXX
[2]
HMC154
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
14 - 5
HMC154S8 / 154S8E
v02.0805
GaAs MMIC SMT LOW DISTORTION
T/R SWITCH, DC - 2.5 GHz
Typical Application Circuit
SWITCHES - SMT
14
14 - 6
Notes:
1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface.
2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS
logic gates and to pin 4 of the RF switch.
3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency
of operation.
4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower
RF power capability) at bias voltages down to +3V.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC154S8 / 154S8E
v02.0805
GaAs MMIC SMT LOW DISTORTION
T/R SWITCH, DC - 2.5 GHz
Evaluation Circuit Board
SWITCHES - SMT
14
List of Materials for Evaluation PCB 101788 [1]
Item
Description
J1 - J3
PCB Mount SMA RF Connector
J4 - J7
DC Pin
C1 - C3
330 pF Capacitor, 0402 Pkg.
U1
HMC154S8 / HMC154S8E SPDT Switch
PCB [2]
101786 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
The circuit board used in the final application should
be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50
ohm impedance and the package ground leads and
package bottom should be connected directly to the
ground plane similar to that shown above. The evaluation circuit board shown above is available from
Hittite Microwave Corporation upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
14 - 7
Similar pages