Central CMSD6001C Surface mount ultra low leakage silicon switching diode Datasheet

CMSD6001
CMSD6001A
CMSD6001C
CMSD6001S
SURFACE MOUNT
ULTRA LOW LEAKAGE
SILICON SWITCHING DIODES
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMSD6001
SERIES are silicon switching diodes manufactured
by the epitaxial planar process, epoxy molded in a
SUPERmini™ surface mount package, designed for
switching applications requiring an extremely low
leakage diode.
SOT-323 CASE
• Device is Halogen Free by design
CMSD6001:
CMSD6001A:
CMSD6001C:
CMSD6001S:
SINGLE
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
DUAL, IN-SERIES
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
MARKING
MARKING
MARKING
MARKING
CODE:
CODE:
CODE:
CODE:
6C1
61A
61C
61S
SYMBOL
VR
VRRM
100
V
IF
250
mA
IFRM
IFSM
250
mA
4.0
A
IFSM
PD
TJ, Tstg
ΘJA
75
UNITS
V
1.0
A
275
mW
-65 to +150
°C
455
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IR
VR=75V
500
BVR
IR=100μA
VF
IF=1.0mA
0.85
V
VF
IF=10mA
0.95
V
VF
IF=100mA
1.1
V
CT
VR=0, f=1.0MHz
IR=IF=10mA, Irr=1.0mA, RL=100Ω
2.0
pF
3.0
μs
trr
100
UNITS
pA
V
R3 (9-May 2011)
CMSD6001
CMSD6001A
CMSD6001C
CMSD6001S
SURFACE MOUNT
ULTRA LOW LEAKAGE
SILICON SWITCHING DIODES
SOT-323 CASE - MECHANICAL OUTLINE
PIN CONFIGURATIONS
CMSD6001
CMSD6001A
CMSD6001C
CMSD6001S
LEAD CODE:
1) Anode
2) NC
3) Cathode
LEAD CODE:
1) Cathode D2
2) Cathode D1
3) Anode D1, D2
LEAD CODE:
1) Anode D2
2) Anode D1
3) Cathode D1, D2
LEAD CODE:
1) Anode D2
2) Cathode D1
3) Anode D1, Cathode D2
MARKING CODE: 6C1
MARKING CODE: 61A
MARKING CODE: 61C
MARKING CODE: 61S
R3 (9-May 2011)
w w w. c e n t r a l s e m i . c o m
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