CMSD6001 CMSD6001A CMSD6001C CMSD6001S SURFACE MOUNT ULTRA LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD6001 SERIES are silicon switching diodes manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for switching applications requiring an extremely low leakage diode. SOT-323 CASE • Device is Halogen Free by design CMSD6001: CMSD6001A: CMSD6001C: CMSD6001S: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN-SERIES MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MARKING MARKING MARKING MARKING CODE: CODE: CODE: CODE: 6C1 61A 61C 61S SYMBOL VR VRRM 100 V IF 250 mA IFRM IFSM 250 mA 4.0 A IFSM PD TJ, Tstg ΘJA 75 UNITS V 1.0 A 275 mW -65 to +150 °C 455 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR VR=75V 500 BVR IR=100μA VF IF=1.0mA 0.85 V VF IF=10mA 0.95 V VF IF=100mA 1.1 V CT VR=0, f=1.0MHz IR=IF=10mA, Irr=1.0mA, RL=100Ω 2.0 pF 3.0 μs trr 100 UNITS pA V R3 (9-May 2011) CMSD6001 CMSD6001A CMSD6001C CMSD6001S SURFACE MOUNT ULTRA LOW LEAKAGE SILICON SWITCHING DIODES SOT-323 CASE - MECHANICAL OUTLINE PIN CONFIGURATIONS CMSD6001 CMSD6001A CMSD6001C CMSD6001S LEAD CODE: 1) Anode 2) NC 3) Cathode LEAD CODE: 1) Cathode D2 2) Cathode D1 3) Anode D1, D2 LEAD CODE: 1) Anode D2 2) Anode D1 3) Cathode D1, D2 LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: 6C1 MARKING CODE: 61A MARKING CODE: 61C MARKING CODE: 61S R3 (9-May 2011) w w w. c e n t r a l s e m i . c o m