MBR3035PT thru MBR30200PT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-247AD (TO-3P) MECHANICAL DATA Case: TO-247AD (TO-3P) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 10 in-lbs maximum Weight: 6.1 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER MBR MBR MBR MBR MBR MBR MBR MBR SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200 PT PT PT PT PT PT PT PT UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 200 V Maximum RMS voltage VRMS 24 31 35 42 63 70 105 140 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 200 V Maximum average forward rectified current IF(AV) 30 A Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 30 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A Peak repetitive reverse surge Current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF=15A, TJ=25℃ IF=15A, TJ=125℃ IF=30A, TJ=25℃ IF=30A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change,(Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range VF IR dV/dt 2 1 A - 0.75 0.85 0.95 1.05 0.60 0.65 0.75 0.92 - 0.82 - - 1.02 1.10 0.73 - - 0.98 - 1 20 0.5 15 0.1 10 10,000 V mA V/μs O RθJC 1.4 TJ - 55 to +150 O C TSTG - 55 to +150 O C C/W Note 1: 2.0μs Pulse Width, f=1.0KHz Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle Document Number: DS_D1309029 Version: J13 MBR3035PT thru MBR30200PT Taiwan Semiconductor ORDERING INFORMATION AEC-Q101 PART NO. PACKING CODE QUALIFIED MBR30xxPT (Note 1) Prefix "H" GREEN COMPOUND CODE C0 PACKAGE PACKING TO-3P 30 / Tube Suffix "G" Note 1: "xx" defines voltage from 35V (MBR3035PT) to 200V (MBR30200PT) EXAMPLE AEC-Q101 PREFERRED P/N PART NO. MBR3060PT C0 MBR3060PT C0 MBR3060PT C0G MBR3060PT C0 MBR3060PTHC0 MBR3060PT GREEN COMPOUND PACKING CODE QUALIFIED H CODE G DESCRIPTION Green compound C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE AVERAGE FORWARD A CURRENT (A) 35 30 25 20 15 10 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 5 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT (A) FIG. 2 MAXIMUM FORWARD SURGE CURRENT PER LEG 225 8.3ms Single Half Sine Wave JEDEC Method 200 175 150 125 100 75 50 25 0 1 10 CASE TEMPERATURE (℃) NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG 100 FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER LEG 100 TJ=125℃ TJ=125℃ 10 TJ=25℃ 1 0.1 MBR3035PT-45PT MBR3050PT-60PT MBR3090PT-200PT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) Document Number: DS_D1309029 1 1.1 1.2 REVERSE LEAKAGE CURRENT (mA) FORWARD CURRENT (A) 100 10 1 0.1 TJ=25℃ 0.01 MBR3035PT-3045PT MBR3050PT-30200PT 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: J13 MBR3035PT thru MBR30200PT Taiwan Semiconductor TRANSIENT THERMAL IMPEDANCE(℃/W) 10000 JUNCTION CAPACITANCE (pF) A FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG f=1.0MHz Vsig=50mVp-p MBR3035PT-MBR3045PT MBR3050PT-MBR3060PT 1000 MBR3090PT-MBR30200PT 100 0.1 1 10 100 100 10 1 0.1 0.01 0.1 1 10 100 T-PULSE DURATION(s) REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A 15.90 16.40 0.626 0.646 B 7.90 8.20 0.311 0.323 C 5.70 6.20 0.224 0.244 D 20.80 21.30 0.819 0.839 E 3.50 4.10 0.138 0.161 F 19.70 20.20 0.776 0.795 G - 4.30 - 0.169 H 2.90 3.40 0.114 0.134 I 1.93 2.18 0.076 0.086 J 2.97 3.22 0.117 0.127 K 1.12 1.22 0.044 0.048 L 5.20 5.70 0.205 0.224 M 4.90 5.16 0.193 0.203 N 2.70 3.00 0.106 0.118 O 0.51 0.76 0.020 0.030 MARKING DIAGRAM P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1309029 Version: J13 MBR3035PT thru MBR30200PT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1309029 Version: J13