Product Bulletin OPI120TX/TXV September 1996 Hi-Rel Optically Coupled Isolator Types OPI120TX, OPI120TXV Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) • High current transfer ratio • 15 kV electrical isolation • Base lead provided for conventional Input-to-Output Isolation Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 15 kVDC(1) Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +125o C Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +150o C Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240o C transistor biasing • Components processed to Optek’s screening program patterned after MIL-PRF-19500 for TX and TXV devices Description Input Diode Forward DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW(2) Output Photosensor The OPI120TX and OPI120TXV are optically coupled isolators, each consisting of a gallium aluminum arsenide infrared light emitting diode (OP235TX or OP235TXV) and an NPN silicon phototransistor (OP804TX or OP804TXV) sealed in a high dielectric plastic housing. This series is designed for applications requiring high voltage isolation between input and output. Continuous Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW(3) Notes: (1) Measured with input leads shorted together and output leads shorted together in air with a maximum relative humidity of 50%. If suitably encapsulated or oil immersed, the isolation voltage is increased to at least 25 kV. (2) Derate linearly 2.0 mW/o C above 25o C. (3) Derate linearly 2.5 mW/o C above 25o C. (4) Methanol or isopropanol are recommended as cleaning agents. High reliability processing is performed at the component level in accordance with MIL-PRF-19500 for both the infrared light emitting diode and the NPN silicon phototransistor.Typical screening and lot acceptance tests are provided on page 13-4. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 13-46 (972) 323-2200 Fax (214) 323-2396 Types OPI120TX, OPI120TXV Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL Input Diode VF IR PARAMETER Forward Voltage(5) MIN TYP MAX UNITS TEST CONDITIONS 1.00 1.40 1.70 V IF = 30 mA 1.20 1.60 1.90 V IF = 30 mA, TA = -55o C 0.90 1.15 1.50 V IF = 30 mA, TA = 100o C 0.1 10 µA VR = 2 V Reverse Current Output Phototransistor V(BR)CBO Collector-Base Breakdown Voltage 30 40 V IC = 100 µA, IE = 0, IF = 0 V(BR)CEO Collector-Emitter Breakdown Voltage 30 40 V IC = 100 µA, IB = 0, IF = 0 V(BR)EBO Emitter-Base Breakdown Voltage 5.0 V IE = 100 µA, IC = 0, IF = 0 IC(OFF) ICB(OFF) Collector-Emitter Dark Current 0.2 100 nA VCE = 10 V, IB = 0, IF = 0, 10 100 µA VCE = 10 V, IB = 0, IF = 0, TA = 100o C 0.1 10.0 nA VCB = 10 V, IE = 0, IF = 0 2.0 mA VCE = 5 V, IB = 0, IF = 10 mA 1.2 mA VCE = 5 V, IB = 0, IF = 10 mA, TA = -55o C 1.2 mA VCE = 5 V, IB = 0, IF = 10 mA, TA = 100o C Collector-Base Dark Current Coupled IC(ON) VCE(SAT) VISO On-State Collector Current(5) Collector-Emitter Saturation Voltage Isolation Voltage (Input to Output) 0.25 15.0 0.30 30.0 V IC = 2 mA, IB = 0, IF = 20 mA kV See Note 1 tr Output Rise Time 8.0 15.0 µs VCC = 10 V, IC = 2 mA, RL = 100 Ω tf Output Fall Time 8.0 15.0 µs VCC = 10 V, IC = 2 mA, RL = 100 Ω (5) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause change in measurement results. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (214) 323-2396 13-47