Micronas HAL805UT-K Programmable linear hall effect sensor Datasheet

PRELIMINARY DATA SHEET
MICRONAS
Edition Feb. 2, 2000
6251-513-1PD
HAL805
Programmable Linear
Hall Effect Sensor
MICRONAS
HAL 805
PRELIMINARY DATA SHEET
Contents
Page
Section
Title
3
3
3
4
4
4
4
4
1.
1.1.
1.2.
1.3.
1.4.
1.5.
1.6.
1.7.
Introduction
Major Applications
Features
Marking Code
Operating Junction Temperature Range (TJ)
Hall Sensor Package Codes
Solderability
Pin Connections and Short Descriptions
5
5
7
9
9
10
2.
2.1.
2.2.
2.3.
2.3.1.
2.3.2.
Functional Description
General Function
Digital Signal Processing and EEPROM
Calibration Procedure
General Procedure
Calibration of the Angle Sensor
11
11
11
11
12
12
13
14
14
15
3.
3.1.
3.2.
3.3.
3.4.
3.5.
3.6.
3.7.
3.8.
3.9.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Position of Sensitive Area
Absolute Maximum Ratings
Recommended Operating Conditions
Electrical Characteristics
Magnetic Characteristics
Open Circuit Detection
Typical Characteristics
17
17
17
17
18
18
18
4.
4.1.
4.2.
4.3.
4.4.
4.5.
4.6.
Application Notes
Application Circuit
Use of two HAL 805 in Parallel
Temperature Compensation
Undervoltage Behavior
Ambient Temperature
EMC and ESD
19
19
19
21
22
23
23
5.
5.1.
5.2.
5.3.
5.4.
5.5.
5.6.
Programming of the Sensor
Definition of Programming Pulses
Definition of the Telegram
Telegram Codes
Number Formats
Register Information
Programming Information
24
6.
Data Sheet History
Note: Some exclusivity restrictions may apply for the use of this sensor in automotive applications.
2
Micronas
HAL 805
PRELIMINARY DATA SHEET
Programmable Linear Hall Effect Sensor
1. Introduction
The HAL 805 is a recent member of the Micronas family of programmable linear Hall sensors. As an extension to the HAL 800, it offers open-circuit detection and
individual programming of different sensors which are
in parallel to the same supply voltage.
The HAL 805 is an universal magnetic field sensor
with a linear output based on the Hall effect. The IC is
designed and produced in sub-micron CMOS technology and can be used for angle or distance measurements if combined with a rotating or moving magnet.
The major characteristics like magnetic field range,
sensitivity, output quiescent voltage (output voltage at
B = 0 mT), and output voltage range are programmable in a non-volatile memory. The sensor has a ratiometric output characteristic, which means that the output voltage is proportional to the magnetic flux and the
supply voltage.
The HAL 805 features a temperature-compensated
Hall plate with choppered offset compensation, an A/D
converter, digital signal processing, a D/A converter
with output driver, an EEPROM memory with redundancy and lock function for the calibration data, a
serial interface for programming the EEPROM, and
protection devices at all pins. The internal digital signal
processing is of great benefit because analog offsets,
temperature shifts, and mechanical stress do not
degrade the sensor accuracy.
The HAL 805 is programmable by modulating the supply voltage. No additional programming pin is needed.
The easy programmability allows a 2-point calibration
by adjusting the output voltage directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer’s manufacturing process is possible. With this
calibration procedure, the tolerances of the sensor, the
magnet, and the mechanical positioning can be compensated in the final assembly. This offers a low-cost
alternative for all applications that presently need
mechanical adjustment or laser trimming for calibrating
the system.
In addition, the temperature compensation of the Hall
IC can be fit to all common magnetic materials by programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables operation over the full temperature range with high
accuracy.
The calculation of the individual sensor characteristics
and the programming of the EEPROM memory can
easily be done with a PC and the application kit from
Micronas.
The sensor is designed for hostile industrial and automotive applications and operates with typically 5 V
supply voltage in the ambient temperature range from
−40 °C up to 150 °C. The HAL 805 is available in the
very small leaded package TO-92UT.
1.1. Major Applications
Due to the sensor’s versatile programming characteristics, the HAL 805 is the optimal system solution for
applications such as:
– contactless potentiometers,
– angle sensors,
– distance measurements,
– magnetic field and current measurement.
1.2. Features
– high-precision linear Hall effect sensor with
ratiometric output and digital signal processing
– multiple programmable magnetic characteristics in a
non-volatile memory (EEPROM) with redundancy
and lock function
– open-circuit detection (ground and supply line break
detection)
– for programming an individual sensor within several
sensors in parallel to the same supply voltage, a
selection can be done via the output pin
– to enable programming of an individual sensor
amongst several sensors running parallel to the
same supply voltage, each sensor can be selected
via its output pin
– temperature characteristics are programmable for
matching all common magnetic materials
– programmable clamping function
– programming through a modulation of the supply
voltage
– operates from −40 °C up to 150 °C
ambient temperature
– operates from 4.5 V up to 5.5 V supply voltage in
specification and functions up to 8.5 V
– total error < 2.0% over operating voltage range and
temperature range
– operates with static magnetic fields and dynamic
magnetic fields up to 2 kHz
– overvoltage and reverse-voltage protection at all pins
– magnetic characteristics extremely robust against
mechanical stress
– short-circuit protected push-pull output
– EMC and ESD optimized design
Micronas
3
HAL 805
PRELIMINARY DATA SHEET
1.3. Marking Code
1.6. Solderability
The HAL 805 has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
Package TO-92UT: according to IEC68-2-58
Type
HAL 805
Temperature Range
A
K
E
805A
805K
805E
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from
the date code printed on the package labels, even in
environments as extreme as 40 °C and 90% relative
humidity.
1.4. Operating Junction Temperature Range (TJ)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
A: TJ = −40 °C to +170 °C
K: TJ = −40 °C to +140 °C
E: TJ = −40 °C to +100 °C
The relationship between ambient temperature (TA)
and junction temperature is explained in Section 4.5.
on page 18.
1.7. Pin Connections and Short Descriptions
Pin
No.
Pin Name
Type
Short Description
1
VDD
IN
Supply Voltage and
Programming Pin
2
GND
3
OUT
Ground
OUT
Push Pull Output
and Selection Pin
1.5. Hall Sensor Package Codes
1
HALXXXPA-T
VDD
Temperature Range: A, K, or E
Package: UT for TO-92UT
Type: 805
Example: HAL805UT-K
→ Type:
805
→ Package:
TO-92UT
→ Temperature Range: TJ = −40°C to +140°C
OUT
3
2
GND
Fig. 1–1: Pin configuration
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Ordering Codes for
Hall Sensors”.
4
Micronas
HAL 805
PRELIMINARY DATA SHEET
2. Functional Description
analog output is switched off during the communication.
2.1. General Function
The external magnetic field component perpendicular
to the branded side of the package generates a Hall
voltage. The Hall IC is sensitive to magnetic north and
south polarity. This voltage is converted to a digital
value, processed in the Digital Signal Processing Unit
(DSP) according to the settings of the EEPROM registers, converted to an analog voltage with ratiometric
behavior, and stabilized by a push-pull output transistor stage. The function and the parameters for the DSP
are explained in Section 2.2. on page 7.
Several sensors in parallel to the same supply and
ground line can be programmed individually. The
selection of each sensor is done via its output pin.
The open-circuit detection provides a defined output
voltage if the VDD or GND line is broken. Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and
high offset stability. The circuitry also rejects offset
shifts due to mechanical stress from the package. The
non-volatile memory consists of redundant EEPROM
cells. In addition, the sensor IC is equipped with
devices for overvoltage and reverse-voltage protection
at all pins.
The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset.
VDD (V)
As long as the LOCK register is not set, the output
characteristic can be adjusted by programming the
EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 2–1). In the supply
voltage range from 4.5 V up to 5.5 V, the sensor generates an analog output voltage. After detecting a command, the sensor reads or writes the memory and
answers with a digital signal on the output pin. The
HAL
805
VDD
8
VOUT (V)
The HAL 805 is a monolithic integrated circuit which
provides an output voltage proportional to the magnetic flux through the Hall plate and proportional to the
supply voltage (ratiometric behavior).
7
6
5
VDD
OUT
digital
analog
GND
Fig. 2–1: Programming with VDD modulation
VDD
Internally
stabilized
Supply and
Protection
Devices
Temperature
Dependent
Bias
Oscillator
Switched
Hall Plate
A/D
Converter
Digital
Signal
Processing
Open
Circuit
Detection
D/A
Converter
100 Ω
OUT
10 kΩ
EEPROM Memory
Supply
Level
Detection
Analog
Output
Protection
Devices
Digital
Output
Lock Control
GND
Fig. 2–2: HAL 805 block diagram
Micronas
5
HAL 805
PRELIMINARY DATA SHEET
ADC-READOUT Register
14 bit
Digital
Output
Digital Signal Processing
A/D
Converter
TC
TCSQ
6 bit
5 bit
Digital
Filter
Multiplier
Adder
Limiter
D/A
Converter
MODE Register
RANGE FILTER
3 bit
3 bit
SENSITIVITY
VOQ
CLAMPLOW
CLAMPHIGH
LOCKR
14 bit
11 bit
10 bit
11 bit
1 bit
Micronas
Registers
EEPROM Memory
Lock
Control
Fig. 2–3: Details of EEPROM and Digital Signal Processing
Range = 30 mT
Filter = 500 Hz
V
5
Range = 100 mT
Filter = 2 kHz
V
5
Clamp-high = 4.5 V
VOUT
Clamp-high = 4 V
4
Sensitivity = 0.116
3
VOUT
4
3
Sensitivity = –1.36
VOQ = 2.5 V
VOQ = –0.5 V
2
2
1
1
Clamp-low = 1 V
0
–40
–20
Clamp-low = 0.5 V
0
20
40 mT
B
Fig. 2–4: Example for output characteristics
6
0
–150 –100 –50
0
50
100
150 mT
B
Fig. 2–5: Example for output characteristics
Micronas
HAL 805
PRELIMINARY DATA SHEET
2.2. Digital Signal Processing and EEPROM
The DSP is the main part of this sensor and performs
the signal conditioning. The parameters for the DSP
are stored in the EEPROM registers. The details are
shown in Fig. 2–3.
Filter = 2 kHz
2000
1500
ADCREADOUT
Terminology:
1000
SENSITIVITY: name of the register or register value
Sensitivity:
name of the parameter
500
The EEPROM registers consist of three groups:
Group 1 contains the registers for the adaption of the
sensor to the magnetic system: MODE for selecting
the magnetic field range and filter frequency, TC and
TCSQ for the temperature characteristics of the magnetic sensitivity.
Group 2 contains the registers for defining the output
characteristics: SENSITIVITY, VOQ, CLAMP-LOW,
and CLAMP-HIGH. The output characteristic of the
sensor is defined by these 4 parameters (see Fig. 2–4
and Fig. 2–5 for examples).
– The parameter VOQ (Output Quiescent Voltage) corresponds to the output voltage at B = 0 mT.
– The parameter Sensitivity defines the magnetic sensitivity:
Sensitivity =
–500
Range 150 mT
–1000
Range 90 mT
Range 60 mT
–1500
Range 30 mT
–2000
–200–150–100 –50
0
50 100 150 200 mT
B
Fig. 2–6: Typical ADC-READOUT
versus magnetic field for filter = 2 kHz
∆VOUT
∆B
– The output voltage can be calculated as:
VOUT ∼ Sensitivity × B + VOQ
The output voltage range can be clamped by setting
the registers CLAMP-LOW and CLAMP-HIGH in order
to enable failure detection (such as short-circuits to
VDD or GND and open connections).
Group 3 contains the Micronas registers and LOCK for
the locking of all registers. The Micronas registers are
programmed and locked during production and are
read-only for the customer. These registers are used
for oscillator frequency trimming, A/D converter offset
compensation, and several other special settings.
An external magnetic field generates a Hall voltage on
the Hall plate. The ADC converts the amplified positive
or negative Hall voltage (operates with magnetic north
and south poles at the branded side of the package) to
a digital value. Positive values correspond to a magnetic north pole on the branded side of the package.
The digital signal is filtered in the internal low-pass filter and is readable in the ADC-READOUT register.
Depending on the programmable magnetic range of
the Hall IC, the operating range of the A/D converter is
from −30 mT...+30 mT up to −150 mT...+150 mT.
Micronas
0
During further processing, the digital signal is multiplied with the sensitivity factor, added to the quiescent
output voltage and limited according to the clamping
voltage. The result is converted to an analog signal
and stabilized by a push-pull output transistor stage.
The ADC-READOUT at any given magnetic field
depends on the programmed magnetic field range but
also on the filter frequency. Fig. 2–6 shows the typical
ADC-READOUT values for the different magnetic field
ranges with the filter frequency set to 2 kHz. The relationship between the minimum and maximum ADCREADOUT values and the filter frequency setting is
listed in the following table.
Filter Frequency
ADC-READOUT RANGE
80 Hz
−3968...3967
160 Hz
−1985...1985
500 Hz
−5292...5290
1 kHz
−2646...2645
2 kHz
−1512...1511
7
HAL 805
PRELIMINARY DATA SHEET
Note: During application design, it should be taken
into consideration that the maximum and minimum
ADC-READOUT is not exceeded during calibration
and operation of the Hall IC. Consequently, the maximum and minimum magnetic fields that may occur in
the operational range of a specific application should
not saturate the A/D converter. Please note that the
A/D converter saturates at magnetic fields well above,
respectively below, the magnetic range limits. This
large safety band between specified magnetic range
and true operational range helps to avoid any saturation.
Range
The RANGE bits are the three lowest bits of the MODE
register; they define the magnetic field range of the
A/D converter.
Magnetic Field Range
RANGE
−30 mT...30 mT
0
−40 mT...40 mT
4
−60 mT...60 mT
5
−75 mT...75 mT
1
−80 mT...80 mT
6
−90 mT...90 mT
2
−100 mT...100 mT
7
−150 mT...150 mT
3
TC and TCSQ
The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in
order to compensate for the change of the magnetic
strength with temperature. The adaption is done by
programming the TC (Temperature Coefficient) and
the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can
be matched to the magnet and the sensor assembly.
As a result, the output voltage characteristic can be
fixed over the full temperature range. The sensor can
compensate for linear temperature coefficients ranging
from about −3100 ppm/K up to 400 ppm/K and quadratic coefficients from about −5 ppm/K² to 5 ppm/K².
Please refer to Section 4.3. on page 17 for the recommended settings for different linear temperature coefficients.
Sensitivity
The SENSITIVITY register contains the parameter for
the multiplier in the DSP. The Sensitivity is programmable between −4 and 4. For VDD = 5 V, the register
can be changed in steps of 0.00049. Sensitivity = 1
corresponds to an increase of the output voltage by
VDD if the ADC-READOUT increases by 2048.
For all calculations, the digital value from the magnetic
field of the A/D converter is used. This digital information is readable from the ADC-READOUT register.
Sensitivity =
∆VOUT * 2048
∆ADC-READOUT * VDD
VOQ
Filter
The FILTER bits are the three highest bits of the
MODE register; they define the −3 dB frequency of the
digital low pass filter.
8
The VOQ register contains the parameter for the adder
in the DSP. VOQ is the output voltage without external
magnetic field (B = 0 mT, respectively ADC-READOUT
= 0) and programmable from −VDD up to VDD. For VDD
= 5 V, the register can be changed in steps of 4.9 mV.
−3 dB Frequency
FILTER
80 Hz
0
Note: If VOQ is programmed to a negative voltage, the
maximum output voltage is limited to:
160 Hz
1
VOUTmax = VOQ + VDD
500 Hz
2
1 kHz
3
2 kHz
4
For calibration in the system environment, a 2-point
adjustment procedure (see Section 2.3.) is recommended. The suitable Sensitivity and VOQ values for
each sensor can be calculated individually by this procedure.
Micronas
HAL 805
PRELIMINARY DATA SHEET
Clamping Voltage
2.3. Calibration Procedure
The output voltage range can be clamped in order to
detect failures like shorts to VDD or GND or an open
circuit.
2.3.1. General Procedure
The CLAMP-LOW register contains the parameter for
the lower limit. The lower clamping voltage is programmable between 0 V and VDD/2. For VDD = 5 V, the register can be changed in steps of 2.44 mV.
The CLAMP-HIGH register contains the parameter for
the upper limit. The upper clamping voltage is programmable between 0 V and VDD. For VDD = 5 V, in
steps of 2.44 mV.
LOCKR
By setting this 1-bit register, all registers will be locked,
and the sensor will no longer respond to any supply
voltage modulation.
Warning: This register cannot be reset!
ADC-READOUT
This 14-bit register delivers the actual digital value of
the applied magnetic field before the signal processing. This register can be read out and is the basis for
the calibration procedure of the sensor in the system
environment.
For calibration in the system environment, the application kit from Micronas is recommended. It contains the
hardware for the generation of the serial telegram for
programming and the corresponding software for the
input of the register values.
In this section, programming of the sensor using this
programming tool is explained. Please refer to
Section 5. on page 19 for information about programming without this tool.
For the individual calibration of each sensor in the customer application, a two point adjustment is recommended (see Fig. 2–7 for an example). When using
the application kit, the calibration can be done in three
steps:
Step 1: Input of the registers which need not be
adjusted individually
The magnetic circuit, the magnetic material with its
temperature characteristics, the filter frequency, and
low and high clamping voltage are given for this application.
Therefore, the values of the following registers should
be identical for all sensors of the customer application.
– FILTER
(according to the maximum signal frequency)
– RANGE
(according to the maximum magnetic field at the
sensor position)
– TC and TCSQ
(depends on the material of the magnet and the
other temperature dependencies of the application)
– CLAMP-LOW and CLAMP-HIGH
(according to the application requirements)
Write the appropriate settings into the HAL 805 registers.
Micronas
9
HAL 805
PRELIMINARY DATA SHEET
Step 2: Calculation of VOQ and Sensitivity
The calibration points 1 and 2 can be set inside the
specified range. The corresponding values for VOUT1
and VOUT2 result from the application requirements.
V
5
Clamp-high = 4.5 V
Low clamping voltage ≤ VOUT1,2 ≤ High clamping voltage
Calibration point 1
VOUT
For highest accuracy of the sensor, calibration points
near the minimum and maximum input signal are recommended. The difference of the output voltage
between calibration point 1 and calibration point 2
should be more than 3.5 V.
4
3
Set the system to calibration point 1 and read the register ADC-READOUT. The result is the value ADCREADOUT1.
2
Now, set the system to calibration point 2, read the
register ADC-READOUT again, and get the value
ADC-READOUT2.
1
With these values and the target values VOUT1 and
VOUT2, for the calibration points 1 and 2, respectively,
the values for Sensitivity and VOQ are calculated as:
Sensitivity =
VOUT1 − VOUT2
ADC-READOUT1 − ADC-READOUT2
VOQ = VOUT1 −
*
2048
VDD
Clamp-low = 0.5 V
Calibration point 2
0
–30
–20
–10
0
10
20
30 °
Angle
Fig. 2–7: Example for output characteristics
ADC-READOUT1 * Sensitivity * VDD
2048
This calculation has to be done individually for each
sensor.
Next, write the calculated values for Sensitivity and
VOQ into the IC for adjusting the sensor.
The sensor is now calibrated for the customer application. However, the programming can be changed again
and again if necessary.
Step 3: Locking the Sensor
Step 1: Input of the registers which need not be
adjusted individually
The register values for the following registers are given
for all applications:
– FILTER
Select the filter frequency: 500 Hz
– RANGE
Select the magnetic field range: 30 mT
The last step is activating the LOCK function with the
“LOCK” command. The sensor is now locked and does
not respond to any programming or reading commands.
– TC
For this magnetic material: 6
Warning: This register cannot be reset!
– CLAMP-LOW
For our example: 0.5 V
2.3.2. Calibration of the Angle Sensor
– CLAMP-HIGH
For our example: 4.5 V
The following description explains the calibration procedure using an angle sensor as an example. The
required output characteristic is shown in Fig. 2–7.
– the angle range is from −25° to 25°
– TCSQ
For this magnetic material: 14
Enter these values in the software, and use the “write
and store” command for permanently writing the values in the registers.
– temperature coefficient of the magnet: −500 ppm/K
10
Micronas
HAL 805
PRELIMINARY DATA SHEET
Step 2: Calculation of VOQ and Sensitivity
3. Specifications
There are two ways to calculate the values for VOQ
and Sensitivity.
3.1. Outline Dimensions
4.06 ±0.1
sensitive area
1.5
Manual Calculation:
x1
0.3
x2
Set the system to calibration point 1 (angle 1 = −25°)
and read the register ADC-READOUT. For our example, the result is ADC-READOUT1 = −2500.
y
Next, set the system to calibration point 2 (angle 2 =
25°), and read the register ADC-READOUT again. For
our example, the result is ADC-READOUT2 = +2350.
0.48
1
2
3
0.75 ±0.2
0.55
0.36
With these measurements and the targets VOUT1 =
4.5 V and VOUT2 = 0.5 V, the values for Sensitivity and
VOQ are calculated as
Sensitivity =
VOQ = 4.5 V −
4.5 V − 0.5 V
−2500 − 2350
*
2.1 ±0.2
4.05 ±0.1
13.0
min.
0.42
1.27 1.27
2048
= −0.3378
5V
(2.54)
−2500 * (−0.3378) * 5 V
= 2.438 V
2048
branded side
45°
Software Calibration:
0.8
SPGS0014-3-A/1E
Use the menu CALIBRATE from the PC software and
enter the values 4.5 V for VOUT1 and 0.5 V for VOUT2.
Set the system to calibration point 1 (angle 1 = −25°),
hit the button “Read ADC-Readout1”, set the system to
calibration point 2 (angle 2 = 25°), hit the button “Read
ADC-Readout2”, and hit the button “Calculate”. The
software will then calculate the appropriate VOQ and
Sensitivity.
This calculation has to be done individually for each
sensor. Now, write the calculated values with the “write
and store” command into the HAL 805 for programming the sensor.
Fig. 3–1:
Plastic Transistor Single Outline Package
(TO-92UT)
Weight approximately 0.14 g
Dimensions in mm
Note: A mechanical tolerance of ±50 µm applies to all
dimensions where no tolerance is explicitly given.
3.2. Dimensions of Sensitive Area
0.25 mm x 0.25 mm
Step 3: Locking the Sensor
The last step is activating the LOCK function with the
“LOCK” command. The sensor is now locked and does
not respond to any programming or reading commands.
3.3. Position of Sensitive Area
TO-92UT
x1 − x2/ 2 ≤ 0.2 mm
Warning: This register cannot be reset!
Micronas
y = 1.5 mm ± 0.2 mm
11
HAL 805
PRELIMINARY DATA SHEET
3.4. Absolute Maximum Ratings
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
−8.5
8.5
V
VDD
Supply Voltage
1
−14.41) 2)
14.41) 2)
V
−IDD
Reverse Supply Current
1
−
501)
mA
IZ
Current through Protection Device
1 or 3
−3004)
3004)
mA
VOUT
Output Voltage
3
−56)
−56)
8.53)
14.43) 2)
V
VOUT − VDD
Excess of Output Voltage
over Supply Voltage
3,1
2
V
IOUT
Continuous Output Current
3
−10
10
mA
tSh
Output Short Circuit Duration
3
−
10
min
TS
Storage Temperature Range
−65
150
°C
TJ
Junction Temperature Range
−40
−40
1705)
150
°C
°C
1)
2)
3)
4)
5)
6)
as long as TJmax is not exceeded
t < 10 min (VDDmin = −15 V for t < 1 min, VDDmax = 16 V for t < 1 min)
as long as TJmax is not exceeded, output is not protected to external 14 V-line (or to −14 V)
t < 2 ms
t < 1000h
internal protection resistor = 100 Ω
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in
the “Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute
maximum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
1
4.5
5
5.5
V
IOUT
Continuous Output Current
3
−1
−
1
mA
RL
Load Resistor
3
4.5
−
−
kΩ
CL
Load Capacitance
3
0.33
10
1000
nF
12
Micronas
HAL 805
PRELIMINARY DATA SHEET
3.6. Electrical Characteristics
at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, after programming, as not otherwise specified in Conditions.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
Symbol
Parameter
Pin No.
IDD
Supply Current
over Temperature Range
VDDZ
VOZ
Min.
Typ.
Max.
Unit
Conditions
1
7
10
mA
Overvoltage Protection
at Supply
1
17.5
20
V
IDD = 25 mA, TJ = 25 °C, t = 20 ms
Overvoltage Protection
at Output
3
17
19.5
V
IO = 10 mA, TJ = 25 °C, t = 20 ms
Resolution
3
12
bit
ratiometric to VDD 1)
EA
Accuracy Error over all
3
−2
0
2
%
RL = 4.7 kΩ (% of supply voltage)3)
INL
Non-Linearity of Output Voltage
over Temperature
3
−1
0
1
%
% of supply voltage3)
ER
Ratiometric Error of Output
over Temperature
(Error in VOUT / VDD)
3
−1
0
1
%
 VOUT1 - VOUT2 > 2 V
during calibration procedure
∆VOUTCL
Accuracy of Output Voltage at
Clamping Low Voltage over
Temperature Range
3
−45
0
45
mV
RL = 4.7 kΩ, VDD = 5 V
∆VOUTCH
Accuracy of Output Voltage at
Clamping High Voltage over
Temperature Range
3
−45
0
45
mV
RL = 4.7 kΩ, VDD = 5 V
VOUTH
Output High Voltage
3
4.65
4.8
V
VDD = 5 V, −1 mA ≤ IOUT ≤ 1mA
VOUTL
Output Low Voltage
3
fADC
Internal ADC Frequency
−
fADC
Internal ADC Frequency over
Temperature Range
tr(O)
0.2
0.35
V
VDD = 5 V, −1 mA ≤ IOUT ≤ 1mA
120
128
140
kHz
TJ = 25 °C
−
110
128
150
kHz
VDD = 4.5 V to 8.5 V
Response Time of Output
3
−
5
4
2
1
10
8
4
2
ms
ms
ms
ms
3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 160 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 2 kHz
CL = 10 nF, time from 10% to 90% of
final output voltage for a steplike
signal Bstep from 0 mT to Bmax
td(O)
Delay Time of Output
3
0.1
0.5
ms
CL = 10 nF
tPOD
Power-Up Time (Time to reach
stabilized Output Voltage)
6
5
3
2
11
9
5
3
ms
ms
ms
ms
3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 160 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 2 kHz
CL = 10 nF, 90% of VOUT
BW
Small Signal Bandwidth (−3 dB)
3
−
2
−
kHz
BAC < 10 mT;
3 dB Filter frequency = 2 kHz
VOUTn
Noise Output Voltagepp
3
−
3
6
mV
2)
ROUT
Output Resistance over Recommended Operating Range
3
−
1
10
Ω
VOUTLmax ≤ VOUT ≤ VOUTHmin
RthJA
Thermal Resistance Junction to
Soldering Point
−
−
150
200
K/W
TO-92UT
1) Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V,
2) peak-to-peak value exceeded: 5%
3) if more than 50% of the selected magnetic field range are used
Micronas
magnetic range = 90 mT
Output DAC LSB = VDD/4096
13
HAL 805
PRELIMINARY DATA SHEET
3.7. Magnetic Characteristics
at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, after programming, as not otherwise specified in Conditions.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
BOffset
Magnetic Offset
3
−1
0
1
mT
B = 0 mT, IOUT = 0 mA, TJ = 25 °C
∆BOffset/∆T
Magnetic Offset Change
due to TJ
−15
0
15
µT/K
B = 0 mT, IOUT = 0 mA
BHysteresis
Magnetic Hysteresis
−20
0
20
µT
Range = 30 mT, Filter = 500 Hz
SR
Magnetic Slew Rate
3
−
2
4
12
25
50
−
mT/ms
Filter frequency = 80 Hz
Filter frequency = 160 Hz
Filter frequency = 500 Hz
Filter frequency = 1 kHz
Filter frequency = 2 kHz
nmeff
Magnetic RMS Broadband
Noise
3
−
10
−
µT
BW = 10 Hz to 2 kHz
fCflicker
Corner Frequency of 1/f Noise
3
−
20
Hz
B = 0 mT
fCflicker
Corner Frequency of 1/frms
Noise
3
−
100
Hz
B = 65 mT, TJ = 25 °C
3.8. Open Circuit Detection
at TJ = −40 °C to +170 °C, Typical Characteristics for TJ = 25 °C
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
VOUT
Output voltage
at open VDD line
3
0
0
0.2
V
VDD = 5 V
RL = 10 kΩ to GND
VOUT
Output voltage at
open GND line
3
4.7
4.8
5
V
VDD = 5 V
RL = 10 kΩ to GND
14
Micronas
HAL 805
PRELIMINARY DATA SHEET
3.9. Typical Characteristics
mA
10
mA
20
TA = 25 °C
VDD = 5 V
15
IDD
IDD
8
10
5
6
0
4
–5
–10
TA = –40 °C
2
TA = 25 °C
–15
TA=150 °C
–20
–15 –10
–5
0
5
10
15
0
–1.5 –1.0 –0.5
20 V
0.0
0.5
1.0
1.5 mA
IOUT
VDD
Fig. 3–2: Typical current consumption
versus supply voltage
Fig. 3–4: Typical current consumption
versus output current
dB
5
mA
10
VDD = 5 V
0
IDD
VOUT
8
–3
–5
–10
6
–15
–20
4
–25
–30
2
–35
0
–50
0
50
100
150
200 °C
TA
Fig. 3–3: Typical current consumption
versus ambient temperature
Micronas
–40
10
Filter: 80 Hz
Filter: 160 Hz
Filter: 500 Hz
Filter: 2 kHz
100
1000
10000 Hz
fsignal
Fig. 3–5: Typical output voltage
versus signal frequency
15
HAL 805
ER
PRELIMINARY DATA SHEET
%
1.0
mT
1.0
0.8
0.8
TC = 16, TCSQ = 8
TC = 0,
BOffset
0.6
0.6
0.4
0.4
0.2
0.2
–0.0
–0.0
–0.2
–0.2
VOUT/VDD = 0.82
–0.4
TCSQ = 12
TC = –20, TCSQ = 12
–0.4
VOUT/VDD = 0.66
–0.6
VOUT/VDD = 0.5
–0.6
–0.8
VOUT/VDD = 0.34
–0.8
VOUT/VDD = 0.18
–1
4
5
6
7
8V
–1
–50
0
50
100
VDD
150
200 °C
TA
Fig. 3–6: Typical ratiometric error
versus supply voltage
Fig. 3–8: Typical magnetic offset
versus ambient temperature
%
120
%
1.0
0.8
1/sensitivity
100
INL 0.6
0.4
80
0.2
60
–0.0
–0.2
40
–0.4
TC = 16, TCSQ = 8
TC = 0,
20
–0.6
TCSQ = 12
Range = 30 mT
TC = –20, TCSQ = 12
–0.8
TC = –31, TCSQ = 0
0
–50
0
50
100
150
200 °C
–1
–40
–20
0
TA
Fig. 3–7: Typical 1/sensitivity
versus ambient temperature
16
20
40 mT
B
Fig. 3–9: Typical nonlinearity
versus magnetic field
Micronas
HAL 805
PRELIMINARY DATA SHEET
4. Application Notes
4.3. Temperature Compensation
4.1. Application Circuit
The relationship between the temperature coefficient
of the magnet and the corresponding TC and TCSQ
codes for linear compensation is given in the following
table. In addition to the linear change of the magnetic
field with temperature, the curvature can be adjusted
as well. For this purpose, other TC and TCSQ combinations are required which are not shown in the table.
Please contact MICRONAS for more detailed information on this higher order temperature compensation.
For EMC protection, it is recommended to connect one
ceramic 4.7 nF capacitor each between ground and
the supply voltage, respectively the output voltage pin.
In addition, the input of the controller unit should be
pulled-down with a 4.7 kOhm resistor and a ceramic
4.7 nF capacitor.
Please note that during programming, the sensor will
be supplied repeatedly with the programming voltage
of 12 V for 100 ms. All components connected to the
VDD line at this time must be able to resist this voltage.
The HAL 800 and HAL 805 contain the same temperature compensation circuits. If an optimal setting for the
HAL 800 is already available, the same settings may
be used for the HAL 805.
VDD
Temperature
Coefficient of
Magnet (ppm/K)
OUT
µC
HAL805
4.7 nF
4.7 nF
Fig. 4–1: Recommended application circuit
4.2. Use of two HAL 805 in Parallel
Two different HAL 805 sensors which are operated in
parallel to the same supply and ground line can be
programmed individually. In order to select the IC
which should be programmed, both Hall ICs are inactivated by the “Deactivate” command on the common
supply line. Then, the appropriate IC is activated by an
“Activate” pulse on its output. Only the activated sensor will react to all following read, write, and program
commands. If the second IC has to be programmed,
the “Deactivate” command is sent again, and the second IC can be selected.
10 nF
4.7 nF
400
31
6
300
28
7
200
24
8
100
21
9
0
18
10
−50
17
10
−90
16
11
−130
15
11
−170
14
11
−200
13
12
−240
12
12
−280
11
12
−320
10
13
HAL 805
Sensor B
−360
9
13
VDD
−410
8
13
OUT A & Select A
−450
7
13
−500
6
14
−550
5
14
−600
4
14
−650
3
14
−700
2
15
−750
1
15
OUT B & Select B
4.7 nF
GND
Fig. 4–2: Parallel operation of two HAL 805
Micronas
TCSQ
4.7 kΩ
4.7 nF
GND
HAL 805
Sensor A
TC
17
HAL 805
Temperature
Coefficient of
Magnet (ppm/K)
PRELIMINARY DATA SHEET
TC
TCSQ
4.4. Undervoltage Behavior
In a voltage range below 4.5 V to approximately 3.5 V,
the operation of the HAL 805 is typically given and predictable for the most sensors. Some of the parameters
may be out of the specification. Below about 3.5 V, the
digital processing is reset. If the supply voltage once
again rises above about 3.5 V, a startup time of about
20 µs elapses for the digital processing to occur. As
long as the supply voltage is still above about 2.8 V,
the analog output is kept at its last valid value ratiometric to VDD. Below about 2.5 V, the entire sensor will
reset.
−810
0
15
−860
−1
16
−910
−2
16
−960
−3
16
−1020
−4
17
−1070
−5
17
−1120
−6
17
4.5. Ambient Temperature
−1180
−7
18
−1250
−8
18
−1320
−9
19
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
−1380
−10
19
TJ = TA + ∆T
−1430
−11
20
At static conditions, the following equation is valid:
−1500
−12
20
∆T = IDD * VDD * RthJA
−1570
−13
20
−1640
−14
21
−1710
−15
21
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the application.
−1780
−16
22
−1870
−17
22
−1950
−18
23
−2030
−19
23
For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax can be
calculated as:
−2100
−20
24
TAmax = TJmax −∆T
−2180
−21
24
−2270
−22
25
−2420
−24
26
−2500
−25
27
−2600
−26
27
−2700
−27
28
−2800
−28
28
−2900
−29
29
−3000
−30
30
−3100
−31
31
For VDD = 5.5 V, Rth = 200 K/W and IDD = 10 mA the
temperature difference ∆T = 11 K.
4.6. EMC and ESD
The HAL 805 is designed for a stabilized 5 V supply.
Interferences and disturbances conducted along the
12 V onboard system (product standards DIN40839
part 1 or ISO 7637 part 1) are not relevant for these
applications.
For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated disturbances, the application circuit shown in Fig. 4–1 is recommended. Applications with this arrangement
passed the EMC tests according to the product standards DIN 40839 part 3 (Electrical transient transmission by capacitive or inductive coupling) and part 4
(Radiated disturbances).
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
18
Micronas
HAL 805
PRELIMINARY DATA SHEET
5. Programming of the Sensor
– Read a register (see Fig. 5–3)
After evaluating this command, the sensor answers
with the Acknowledge Bit, 14 Data Bits, and the
Data Parity Bit on the output.
5.1. Definition of Programming Pulses
The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with
a serial telegram on the output pin.
– Programming the EEPROM cells (see Fig. 5–4)
After evaluating this command, the sensor answers
with the Acknowledge Bit. After the delay time tw,
the supply voltage rises up to the programming voltage.
The bits in the serial telegram have a different bit time
for the VDD-line and the output. The bit time for the
VDD-line is defined through the length of the Sync Bit
at the beginning of each telegram. The bit time for the
output is defined through the Acknowledge Bit.
– Activate a sensor (see Fig. 5–5))
If more than one sensor is connected to the supply
line, selection can be done by first deactivating all
sensors. The output of all sensors will be pulled to
ground by the internal 10 kΩ resistors. With an Activate pulse on the appropriate output pin, an individual sensor can be selected. All following commands
will only be accepted from the activated sensor.
A logical “0” is coded as no voltage change within the
bit time. A logical “1” is coded as a voltage change
between 50% and 80% of the bit time. After each bit, a
voltage change occurs.
5.2. Definition of the Telegram
tr
tf
VDDH
Each telegram starts with the Sync Bit (logical 0), 3
bits for the Command (COM), the Command Parity Bit
(CP), 4 bits for the Address (ADR), and the Address
Parity Bit (AP).
tp0
logical 0
tp0
or
VDDL
There are 4 kinds of telegrams:
tp1
VDDH
– Write a register (see Fig. 5–2)
After the AP Bit, follow 14 Data Bits (DAT) and the
Data Parity Bit (DP). If the telegram is valid and the
command has been processed, the sensor answers
with an Acknowledge Bit (logical 0) on the output.
tp0
logical 1
VDDL
or
tp0
tp1
Fig. 5–1: Definition of logical 0 and 1 bit
Table 5–1: Telegram parameters
Symbol
Parameter
Pin
Min.
Typ.
Max.
Unit
VDDL
Supply Voltage for Low Level
during Programming
1
5
5.6
6
V
VDDH
Supply Voltage for High Level
during Programming
1
6.8
8.0
8.5
V
tr
Rise time
1
0.05
ms
tf
Fall time
1
0.05
ms
tp0
Bit time on VDD
1
1.7
1.75
1.8
ms
tp0 is defined through the Sync Bit
tpOUT
Bit time on output pin
3
2
3
4
ms
tpOUT is defined through the
Acknowledge Bit
tp1
Voltage Change for logical 1
1, 3
50
65
80
%
% of tp0 or tpOUT
VDDPROG
Supply Voltage for
Programming the EEPROM
1
11.95
12
12.1
V
tPROG
Programming Time for EEPROM
1
95
100
105
ms
Micronas
Remarks
19
HAL 805
PRELIMINARY DATA SHEET
Table 5–1: Telegram parameters, continued
Symbol
Parameter
Pin
Min.
Typ.
Max.
Unit
trp
Rise time of programming voltage
1
0.2
0.5
1
ms
tfp
Fall time of programming voltage
1
0
1
ms
tw
Delay time of programming voltage
after Acknowledge
1
0.5
0.7
1
ms
Vact
Voltage for an Activate pulse
3
3
4
5
V
tact
Duration of an Activate pulse
3
0.05
0.1
0.2
ms
Remarks
WRITE
Sync
COM
CP
ADR
AP
DAT
DP
VDD
Acknowledge
VOUT
Fig. 5–2: Telegram for coding a Write command
READ
Sync
COM
CP
ADR
AP
VDD
Acknowledge
DAT
DP
VOUT
Fig. 5–3: Telegram for coding a Read command
trp
tPROG
tfp
VDDPROG
ERASE, PROM, LOCK, and LOCKI
Sync
COM
CP
ADR
AP
VDD
Acknowledge
VOUT
tw
Fig. 5–4: Telegram for coding the EEPROM programming
VACT
tr
tACT
tf
VOUT
Fig. 5–5: Activate pulse
20
Micronas
HAL 805
PRELIMINARY DATA SHEET
5.3. Telegram Codes
Data Bits (DAT)
The 14 Data Bits contain the register information.
Sync Bit
Each telegram starts with the Sync Bit. This logical “0”
pulse defines the exact timing for tp0.
The registers use different number formats for the
Data Bits. These formats are explained in Section 5.4.
Command Bits (COM)
In the Write command, the last bits are valid. If, for
example, the TC register (6 bits) is written, only the
last 6 bits are valid.
The Command code contains 3 bits and is a binary
number. Table 5–2 shows the available commands
and the corresponding codes for the HAL 805.
In the Read command, the first bits are valid. If, for
example, the TC register (6 bits) is read, only the first 6
bits are valid.
Command Parity Bit (CP)
Data Parity Bit (DP)
This parity bit is “1” if the number of zeros within the 3
Command Bits is uneven. The parity bit is “0”, if the
number of zeros is even.
This parity bit is “1” if the number of zeros within the
binary number is even. The parity bit is “0” if the number of zeros is uneven.
Address Bits (ADR)
Acknowledge
The Address code contains 4 bits and is a binary number. Table 5–3 shows the available addresses for the
HAL 805 registers.
After each telegram, the output answers with the
Acknowledge signal. This logical “0” pulse defines the
exact timing for tpOUT.
Address Parity Bit (AP)
This parity bit is “1” if the number of zeros within the 4
Address bits is uneven. The parity bit is “0” if the number of zeros is even.
Table 5–2: Available commands
Command
Code
Explanation
READ
2
read a register
WRITE
3
write a register
PROM
4
program all nonvolatile registers (except the lock bits)
ERASE
5
erase all nonvolatile registers (except the lock bits)
LOCKI
6
lock MICRONAS lockable register
LOCK
7
lock the whole device and switch permanently to the analog-mode
Please note:
The MICRONAS lock bit (LOCKI) has already been set during production and cannot be reset.
Micronas
21
HAL 805
PRELIMINARY DATA SHEET
5.4. Number Formats
Two-complementary number:
The most significant bit is given as first, the least significant bit as last digit.
The first digit of positive numbers is “0”, the rest of the
number is a binary number. Negative numbers start
with “1”. In order to calculate the absolute value of the
number, calculate the complement of the remaining
digits and add “1”.
Example: 101001 represents 41 decimal.
Example:
Binary number:
0101001 represents +41 decimal
1010111 represents −41 decimal
Signed binary number:
The first digit represents the sign of the following
binary number (1 for negative, 0 for positive sign).
Example:
0101001 represents +41 decimal
1101001 represents −41 decimal
Table 5–3: Available register addresses
Register
Code
Data
Bits
Format
Customer
Remark
CLAMP-LOW
1
10
binary
read/write/program
Low clamping voltage
CLAMP-HIGH
2
11
binary
read/write/program
High clamping voltage
VOQ
3
11
two compl.
binary
read/write/program
SENSITIVITY
4
14
signed binary
read/write/program
MODE
5
6
binary
read/write/program
Range and filter settings
LOCKR
6
1
binary
lock
Lock Bit
ADC-READOUT
7
14
two compl.
binary
read
TC
11
6
signed binary
read/write/program
TCSQ
12
5
binary
read/write/program
DEACTIVATE
15
12
binary
write
Deactivate the sensor
MICRONAS registers (read only for customers)
Register
Code
Data
Bits
Format
Remark
OFFSET
8
4
two compl. binary
ADC offset adjustment
FOSCAD
9
5
binary
Oscillator frequency adjustment
SPECIAL
13
6
IMLOCK
14
1
22
special settings
binary
Lock Bit for the Micronas registers
Micronas
HAL 805
PRELIMINARY DATA SHEET
5.5. Register Information
ADC-READOUT
– This register is read only.
– The register range is from −8192 up to 8191.
CLAMP-LOW
– The register range is from 0 up to 1023.
– The register value is calculated by:
CLAMP-LOW =
Low Clamping Voltage
VDD
DEACTIVATE
* 2048
– This register can only be written.
– The register has to be written with 2063 decimal
(80F hexadecimal) for the deactivation.
CLAMP-HIGH
– The register range is from 0 up to 2047.
– The sensor can be reset with an Activate pulse on
the output pin or by switching off and on the supply
voltage.
– The register value is calculated by:
CLAMP-HIGH =
High Clamping Voltage
VDD
5.6. Programming Information
* 2048
VOQ
– The register range is from −1024 up to 1023.
– The register value is calculated by:
VOQ =
VOQ
VDD
* 1024
If the content of any register (except the lock registers)
is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must
be permanently stored in the EEPROM.
Permanently storing a value in the EEPROM is done
by first sending an ERASE command followed by
sending a PROM command. The address within the
ERASE and PROM commands is not important.
ERASE and PROM act on all registers in parallel.
If all HAL 805 registers are to be changed, all writing
commands can be sent one after the other, followed by
sending one ERASE and PROM command at the end.
SENSITIVITY
– The register range is from −8192 up to 8191.
– The register value is calculated by:
SENSITIVITY =
Sensitivity
2048
TC and TCSQ
– The TC register range is from −31 up to 31.
– The TCSQ register range is from 0 up to 31.
Please refer Section 4.2. on page 17 for the recommended values.
MODE
– The register range is from 0 up to 63 and contains
the settings for FILTER and RANGE:
MODE = FILTER * 8 + RANGE
Please refer Section 2.2. on page 7 for the available
FILTER and RANGE values.
Micronas
23
HAL 805
PRELIMINARY DATA SHEET
6. Data Sheet History
1. Preliminary data sheet:
“HAL 805 Programmable Linear Hall Effect Sensor”,
Feb. 2, 2000, 6251-513-1PD.
First release of the preliminary data sheet.
Micronas GmbH
Hans-Bunte-Strasse 19
D-79108 Freiburg (Germany)
P.O. Box 840
D-79008 Freiburg (Germany)
Tel. +49-761-517-0
Fax +49-761-517-2174
E-mail: [email protected]
Internet: www.micronas.com
Printed in Germany
Order No. 6251-513-1PD
24
All information and data contained in this data sheet are without any
commitment, are not to be considered as an offer for conclusion of a
contract, nor shall they be construed as to create any liability. Any new
issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirmation
form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may
result from its use.
Further, Micronas GmbH reserves the right to revise this publication and
to make changes to its content, at any time, without obligation to notify
any person or entity of such revisions or changes.
No part of this publication may be reproduced, photocopied, stored on a
retrieval system, or transmitted without the express written consent of
Micronas GmbH.
Micronas