MOTOROLA MCM63P837ZP200R 256k x 36 and 512k x 18 bit pipelined burstram synchronous fast static ram Datasheet

Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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Freescale Semiconductor, Inc...
256K x 36 and 512K x 18 Bit
Pipelined BurstRAM
Synchronous Fast Static RAM
The MCM63P837 and MCM63P919 are 8M–bit synchronous fast static RAMs
designed to provide a burstable, high performance, secondary cache for the
PowerPC and other high performance microprocessors. The MCM63P837
(organized as 256K words by 36 bits) and the MCM63P919 (organized as 512K
words by 18 bits) are fabricated in Motorola’s high performance silicon gate
CMOS technology. Synchronous design allows precise cycle control with the use
of an external clock (K).
Addresses (SA), data inputs (DQx), and all control signals except output
enable (G), sleep mode (ZZ), and linear burst order (LBO) are clock (K)
controlled through positive–edge–triggered noninverting registers.
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst
addresses can be generated internally by the MCM63P837 and MCM63P919
(burst sequence operates in linear or interleaved mode dependent upon the state
of LBO) and controlled by the burst address advance (ADV) input pin.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (K) input. This feature eliminates complex off–chip write pulse generation
and provides increased timing flexibility for incoming signals.
Synchronous byte write (SBx), synchronous global write (SGW), and synchronous write enable (SW) are provided to allow writes to either individual bytes or
to all bytes. The bytes are designated as “a”, “b”, etc. SBa controls DQa, SBb
controls DQb, etc. Individual bytes are written if the selected byte writes SBx are
asserted with SW. All bytes are written if either SGW is asserted or if all SBx and
SW are asserted.
For read cycles, pipelined SRAMs output data is temporarily stored by an
edge–triggered output register and then released to the output buffers at the next
rising edge of clock (K).
The MCM63P837 and MCM63P919 operate from a 3.3 V core power supply.
All outputs operate on a 2.5 V or 3.3 V power supply. All inputs and outputs are
JEDEC standard JESD8–A and JESD8–5 compatible.
Order this document
by MCM63P837/D
MCM63P837
MCM63P919
TQ PACKAGE
TQFP
CASE 983A–01
ZP PACKAGE
PBGA
CASE 999–02
• MCM63P837/MCM63P919–225 = 2.6 ns Access/4.4 ns Cycle (225 MHz)
MCM63P837/MCM63P919–200 = 3 ns Access/5 ns Cycle (200 MHz)
MCM63P837/MCM63P919–166 = 3.5 ns Access/6 ns Cycle (166 MHz)
• 3.3 V ±5% Core Power Supply, 2.5 V or 3.3 V I/O Supply
• ADSP, ADSC, and ADV Burst Control Pins
• Selectable Burst Sequencing Order (Linear/Interleaved)
• Single–Cycle Deselect Timing
• Internally Self–Timed Write Cycle
• Byte Write and Global Write Control
• Sleep Mode (ZZ)
• Simplified JTAG
• JEDEC Standard 100–Pin TQFP and 119–Bump PBGA Packages
The PowerPC name is a trademark of IBM Corp., used under license therefrom.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
REV 1
8/27/99

Motorola, Inc. 1999
MOTOROLA
FAST SRAM
For More Information On This Product,
Go to: www.freescale.com
MCM63P837•MCM63P919
1
Freescale Semiconductor, Inc.
FUNCTIONAL BLOCK DIAGRAM
LBO
ADV
K
ADSC
BURST
COUNTER
K2
2
18/19
256K x 36 / 512K x 18
ARRAY
CLR
ADSP
2
SA
SA1
SA0
ADDRESS
REGISTER
18/19
16/17
SGW
Freescale Semiconductor, Inc...
SW
SBa
SBb
WRITE
REGISTER
a
36/18
36/18
WRITE
REGISTER
b
4/2
SBc*
SBd*
DATA–OUT
REGISTER
K
WRITE
REGISTER
d*
K2
SE1
SE2
SE3
DATA–IN
REGISTER
WRITE
REGISTER
c*
ENABLE
REGISTER
K
ENABLE
REGISTER
G
DQa – DQd/
DQa–DQb
ZZ
* Valid only for MCM63P837.
MCM63P837•MCM63P919
2
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA FAST SRAM
Freescale Semiconductor, Inc.
DQc
DQc
DQc
VDDQ
VSS
DQc
DQc
DQc
DQc
VSS
VDDQ
DQc
DQc
NC
VDD
NC
VSS
DQd
DQd
VDDQ
VSS
DQd
DQd
DQd
DQd
VSS
VDDQ
DQd
DQd
DQd
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
10
71
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 3738 39 40 41 42 43 44 4546 47 48 49 50
A
DQb
DQb
DQb
VDDQ
VSS
DQb
DQb
DQb
DQb
VSS
VDDQ
DQb
DQb
VSS
NC
VDD
ZZ
DQa
DQa
VDDQ
VSS
DQa
DQa
DQa
DQa
VSS
VDDQ
DQa
DQa
DQa
B
C
D
1
2
3
4
5
6
7
VDDQ
SA
SA
ADSP
SA
SA
VDDQ
NC
SE2
SA
ADSC
SA
SA
NC
NC
SA
SA
VDD
SA
SA
NC
DQc
DQc
VSS
NC
VSS
DQb
DQb
DQc
DQc
VSS
SE1
VSS
DQb
DQb
VDDQ
DQc
VSS
G
VSS
DQb VDDQ
DQc
DQc
SBc
ADV
SBb
DQb
DQb
DQc
DQc
VSS
SGW
VSS
DQb
DQb
VDDQ VDD
NC
VDD
NC
VDD VDDQ
E
F
G
H
J
K
DQd
DQd
VSS
K
VSS
DQa
DQa
DQd
DQd
SBd
NC
SBa
DQa
DQa
VDDQ DQd
VSS
SW
VSS
DQa VDDQ
L
M
N
P
R
DQd
DQd
VSS
SA1
VSS
DQa
DQa
DQd
DQd
VSS
SA0
VSS
DQa
DQa
NC
SA
LBO
VDD
NC
SA
NC
NC
NC
SA
SA
SA
NC
ZZ
VDDQ TMS
TDI
TCK
T
U
TDO TRST VDDQ
LBO
SA
SA
SA
SA
SA1
SA0
NC
NC
VSS
VDD
NC
SA
SA
SA
SA
SA
SA
SA
SA
Freescale Semiconductor, Inc...
SA
SA
SE1
SE2
SBd
SBc
SBb
SBa
SE3
VDD
VSS
K
SGW
SW
G
ADSC
ADSP
ADV
SA
SA
MCM63P837 PIN ASSIGNMENTS
100–PIN TQFP
TOP VIEW
119–BUMP PBGA
TOP VIEW
Not to Scale
MOTOROLA FAST SRAM
For More Information On This Product,
Go to: www.freescale.com
MCM63P837•MCM63P919
3
Freescale Semiconductor, Inc.
MCM63P837 TQFP PIN DESCRIPTIONS
Pin Locations
Symbol
Type
85
ADSC
Input
Synchronous Address Status Controller: Active low, interrupts any
ongoing burst and latches a new external address. Used to initiate a
READ, WRITE, or chip deselect.
84
ADSP
Input
Synchronous Address Status Processor: Active low, interrupts any
ongoing burst and latches a new external address. Used to initiate a
new READ, WRITE, or chip deselect (exception — chip deselect does
not occur when ADSP is asserted and SE1 is high).
83
ADV
Input
Synchronous Address Advance: Increments address count in
accordance with counter type selected (linear/interleaved).
DQx
I/O
86
G
Input
Asynchronous Output Enable Input:
Low — enables output buffers (DQx pins).
High — DQx pins are high impedance.
89
K
Input
Clock: This signal registers the address, data in, and all control signals
except G, LBO, and ZZ.
31
LBO
Input
Linear Burst Order Input: This pin must remain in steady state (this
signal not registered or latched). It must be tied high or low.
Low — linear burst counter (68K/PowerPC).
High — interleaved burst counter (486/i960/Pentium).
32, 33, 34, 35, 44, 43, 45, 46, 47, 48, 49,
50, 81, 82, 99, 100
SA
Input
Synchronous Address Inputs: These inputs are registered and must
meet setup and hold times.
36, 37
SA1, SA0
Input
Synchronous Address Inputs: these pins must be wired to the two LSBs
of the address bus for proper burst operation. These inputs are
registered and must meet setup and hold times.
93, 94, 95, 96
(a) (b) (c) (d)
SBx
Input
Synchronous Byte Write Inputs: “x” refers to the byte being written (byte
a, b, c, d). SGW overrides SBx.
98
SE1
Input
Synchronous Chip Enable: Active low to enable chip.
Negated high — blocks ADSP or deselects chip when ADSC is
asserted.
97
SE2
Input
Synchronous Chip Enable: Active high for depth expansion.
92
SE3
Input
Synchronous Chip Enable: Active low for depth expansion.
88
SGW
Input
Synchronous Global Write: This signal writes all bytes regardless of the
status of the SBx and SW signals. If only byte write signals SBx are
being used, tie this pin high.
87
SW
Input
Synchronous Write: This signal writes only those bytes that have been
selected using the byte write SBx pins. If only byte write signals SBx
are being used, tie this pin low.
64
ZZ
Input
Sleep Mode: This active high asynchronous signal places the RAM into
the lowest power mode. The ZZ pin disables the RAMs internal clock
when placed in this mode. When ZZ is negated, the RAM remains in
low power mode until it is commanded to READ or WRITE. Data
integrity is maintained upon returning to normal operation.
15, 41, 65, 91
VDD
Supply
Core Power Supply.
4, 11, 20, 27, 54, 61, 70, 77
VDDQ
Supply
I/O Power Supply.
5, 10, 17, 21, 26, 40, 55, 60, 67,
71, 76, 90
VSS
Supply
Ground.
14, 16, 38, 39, 42, 66
NC
—
Freescale Semiconductor, Inc...
(a) 51, 52, 53, 56, 57, 58, 59, 62, 63
(b) 68, 69, 72, 73, 74, 75, 78, 79, 80
(c) 1, 2, 3, 6, 7, 8, 9, 12, 13
(d) 18, 19, 22, 23, 24, 25, 28, 29, 30
MCM63P837•MCM63P919
4
Description
Synchronous Data I/O: “x” refers to the byte being read or written
(byte a, b, c, d).
No Connection: There is no connection to the chip.
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA FAST SRAM
Freescale Semiconductor, Inc.
MCM63P837 PBGA PIN DESCRIPTIONS
Pin Locations
Symbol
Type
4B
ADSC
Input
Synchronous Address Status Controller: Active low, interrupts any
ongoing burst and latches a new external address. Used to initiate a
READ, WRITE, or chip deselect.
4A
ADSP
Input
Synchronous Address Status Processor: Active low, interrupts any
ongoing burst and latches a new external address. Used to initiate a
new READ, WRITE, or chip deselect (exception — chip deselect does
not occur when ADSP is asserted and SE1 is high).
4G
ADV
Input
Synchronous Address Advance: Increments address count in
accordance with counter type selected (linear/interleaved).
DQx
I/O
4F
G
Input
Asynchronous Output Enable Input:
Low — enables output buffers (DQx pins).
High — DQx pins are high impedance.
4K
K
Input
Clock: This signal registers the address, data in, and all control signals
except G, LBO, and ZZ.
3R
LBO
Input
Linear Burst Order Input: This pin must remain in steady state (this
signal not registered or latched). It must be tied high or low.
Low — linear burst counter (68K/PowerPC).
High — interleaved burst counter (486/i960/Pentium).
2A, 3A, 5A, 6A, 3B, 5B, 6B, 2C, 3C, 5C,
6C, 2R, 6R, 3T, 4T, 5T
SA
Input
Synchronous Address Inputs: These inputs are registered and must
meet setup and hold times.
4N, 4P
SA1, SA0
Input
Synchronous Address Inputs: These pins must be wired to the two
LSBs of the address bus for proper burst operation. These inputs are
registered and must meet setup and hold times.
5L, 5G, 3G, 3L
(a) (b) (c) (d)
SBx
Input
Synchronous Byte Write Inputs: “x” refers to the byte being written (byte
a, b, c, d). SGW overrides SBx.
4E
SE1
Input
Synchronous Chip Enable: Active low to enable chip.
Negated high — blocks ADSP or deselects chip when ADSC is
asserted.
Freescale Semiconductor, Inc...
(a) 6K, 7K, 6L, 7L, 6M, 6N, 7N, 6P, 7P
(b) 6D, 7D, 6E, 7E, 6F, 6G, 7G, 6H, 7H
(c) 1D, 2D, 1E, 2E, 2F, 1G, 2G, 1H, 2H
(d) 1K, 2K, 1L, 2L, 2M, 1N, 2N, 1P, 2P
Description
Synchronous Data I/O: “x” refers to the byte being read or written
(byte a, b, c, d).
2B
SE2
Input
Synchronous Chip Enable: Active high for depth expansion.
4H
SGW
Input
Synchronous Global Write: This signal writes all bytes regardless of the
status of the SBx and SW signals. If only byte write signals SBx are
being used, tie this pin high.
4M
SW
Input
Synchronous Write: This signal writes only those bytes that have been
selected using the byte write SBx pins. If only byte write signals SBx
are being used, tie this pin low.
4U
TCK
Input
Boundary Scan Pin, Test Clock: If boundary scan is not used, TCK
must be tied to VDD or VSS.
Boundary Scan Pin, Test Data In.
3U
TDI
Input
5U
TDO
Output
2U
TMS
Input
Boundary Scan Pin, Test Mode Select.
6U
TRST
Input
Boundary Scan Pin, Asynchronous Test Reset: If boundary scan is not
used, TRST must be tied to VSS.
7T
ZZ
Input
Sleep Mode: This active high asynchronous signal places the RAM into
the lowest power mode. The ZZ pin disables the RAMs internal clock
when placed in this mode. When ZZ is negated, the RAM remains in
low power mode until it is commanded to READ or WRITE. Data
integrity is maintained upon returning to normal operation.
4C, 2J, 4J, 6J, 4R
VDD
VDDQ
Supply
Core Power Supply.
Supply
I/O Power Supply.
3D, 5D, 3E, 5E, 3F, 5F, 3H, 5H, 3K, 5K,
3M, 5M, 3N, 5N, 3P, 5P
VSS
Supply
Ground.
1B, 7B, 1C, 7C, 4D, 3J, 5J, 4L, 1R, 5R,
7R, 1T, 2T, 6T
NC
—
1A, 7A, 1F, 7F, 1J, 7J, 1M, 7M, 1U, 7U
MOTOROLA FAST SRAM
Boundary Scan Pin, Test Data Out.
No Connection: There is no connection to the chip.
For More Information On This Product,
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MCM63P837•MCM63P919
5
Freescale Semiconductor, Inc.
NC
NC
NC
VDDQ
VSS
NC
NC
DQb
DQb
VSS
VDDQ
DQb
DQb
NC
VDD
NC
VSS
DQb
DQb
VDDQ
VSS
DQb
DQb
DQb
NC
VSS
VDDQ
NC
NC
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
10
71
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 3738 39 40 41 42 43 44 4546 47 48 49 50
A
SA
NC
NC
VDDQ
VSS
NC
DQa
DQa
DQa
VSS
VDDQ
DQa
DQa
VSS
NC
VDD
ZZ
DQa
DQa
VDDQ
VSS
DQa
DQa
NC
NC
VSS
VDDQ
NC
NC
NC
B
C
D
1
2
3
4
5
6
7
VDDQ
SA
SA
ADSP
SA
SA
VDDQ
NC
SE2
SA
ADSC
SA
SA
NC
NC
SA
SA
VDD
SA
SA
NC
DQb
NC
VSS
NC
VSS
DQa
NC
NC
DQb
VSS
SE1
VSS
NC
DQa
VDDQ
NC
VSS
G
VSS
DQa VDDQ
NC
DQb
SBb
ADV
VSS
NC
DQa
DQb
NC
VSS
SGW
VSS
DQa
NC
VDDQ VDD
NC
VDD
NC
VDD VDDQ
E
F
G
H
J
K
L
NC
DQb
VSS
K
VSS
NC
DQa
DQb
NC
VSS
NC
SBa
DQa
NC
VDDQ DQb
VSS
SW
VSS
NC
VDDQ
M
N
P
R
DQb
NC
VSS
SA1
VSS
DQa
NC
NC
DQb
VSS
SA0
VSS
NC
DQa
NC
SA
LBO
VDD
NC
SA
NC
NC
SA
SA
NC
SA
SA
ZZ
TDI
TCK
T
U
VDDQ TMS
TDO TRST VDDQ
LBO
SA
SA
SA
SA
SA1
SA0
NC
NC
VSS
VDD
NC
SA
SA
SA
SA
SA
SA
SA
SA
Freescale Semiconductor, Inc...
SA
SA
SE1
SE2
NC
NC
SBb
SBa
SE3
VDD
VSS
K
SGW
SW
G
ADSC
ADSP
ADV
SA
SA
MCM63P919 PIN ASSIGNMENTS
100–PIN TQFP
TOP VIEW
119–BUMP PBGA
TOP VIEW
Not to Scale
MCM63P837•MCM63P919
6
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA FAST SRAM
Freescale Semiconductor, Inc.
MCM63P919 TQFP PIN DESCRIPTIONS
Pin Locations
Symbol
Type
85
ADSC
Input
Synchronous Address Status Controller: Active low, interrupts any
ongoing burst and latches a new external address. Used to initiate a
READ, WRITE, or chip deselect.
84
ADSP
Input
Synchronous Address Status Processor: Active low, interrupts any
ongoing burst and latches a new external address. Used to initiate a
new READ, WRITE, or chip deselect (exception — chip deselect does
not occur when ADSP is asserted and SE1 is high).
83
ADV
Input
Synchronous Address Advance: Increments address count in
accordance with counter type selected (linear/interleaved).
DQx
I/O
86
G
Input
Asynchronous Output Enable Input:
Low — enables output buffers (DQx pins).
High — DQx pins are high impedance.
89
K
Input
Clock: This signal registers the address, data in, and all control signals
except G, LBO, and ZZ.
31
LBO
Input
Linear Burst Order Input: This pin must remain in steady state (this
signal not registered or latched). It must be tied high or low.
Low — linear burst counter (68K/PowerPC).
High — interleaved burst counter (486/i960/Pentium).
32, 33, 34, 35, 43, 44, 45, 46, 47, 48, 49,
50, 80, 81, 82, 99, 100
SA
Input
Synchronous Address Inputs: These inputs are registered and must
meet setup and hold times.
36, 37
SA1, SA0
Input
Synchronous Address Inputs: These pins must be wired to the two
LSBs of the address bus for proper burst operation. These inputs are
registered and must meet setup and hold times.
93, 94
(a) (b)
SBx
Input
Synchronous Byte Write Inputs: “x” refers to the byte being written (byte
a, b). SGW overrides SBx.
98
SE1
Input
Synchronous Chip Enable: Active low to enable chip.
Negated high — blocks ADSP or deselects chip when ADSC is
asserted.
97
SE2
Input
Synchronous Chip Enable: Active high for depth expansion.
92
SE3
Input
Synchronous Chip Enable: Active low for depth expansion.
88
SGW
Input
Synchronous Global Write: This signal writes all bytes regardless of the
status of the SBx and SW signals. If only byte write signals SBx are
being used, tie this pin high.
87
SW
Input
Synchronous Write: This signal writes only those bytes that have been
selected using the byte write SBx pins. If only byte write signals SBx
are being used, tie this pin low.
64
ZZ
Input
Sleep Mode: This active high asynchronous signal places the RAM into
the lowest power mode. The ZZ pin disables the RAMs internal clock
when placed in this mode. When ZZ is negated, the RAM remains in
low power mode until it is commanded to READ or WRITE. Data
integrity is maintained upon returning to normal operation.
15, 41, 65, 91
VDD
Supply
Core Power Supply.
4, 11, 20, 27, 54, 61, 70, 77
VDDQ
Supply
I/O Power Supply.
5, 10, 17, 21, 26, 40, 55, 60, 67,
71, 76, 90
VSS
Supply
Ground.
1, 2, 3, 6, 7, 14, 16, 25, 28, 29, 30, 38,
39, 42, 51, 52, 53, 56, 57, 66, 75, 78, 79,
95, 96
NC
—
Freescale Semiconductor, Inc...
(a) 58, 59, 62, 63, 68, 69, 72, 73, 74
(b) 8, 9, 12, 13, 18, 19, 22, 23, 24
MOTOROLA FAST SRAM
Description
Synchronous Data I/O: “x” refers to the byte being read or written
(byte a, b).
No Connection: There is no connection to the chip.
For More Information On This Product,
Go to: www.freescale.com
MCM63P837•MCM63P919
7
Freescale Semiconductor, Inc.
MCM63P919 PBGA PIN DESCRIPTIONS
Pin Locations
Symbol
Type
4B
ADSC
Input
Synchronous Address Status Controller: Active low, interrupts any
ongoing burst and latches a new external address. Used to initiate a
READ, WRITE, or chip deselect.
4A
ADSP
Input
Synchronous Address Status Processor: Active low, interrupts any
ongoing burst and latches a new external address. Used to initiate a
new READ, WRITE, or chip deselect (exception — chip deselect does
not occur when ADSP is asserted and SE1 is high).
4G
ADV
Input
Synchronous Address Advance: Increments address count in
accordance with counter type selected (linear/interleaved).
DQx
I/O
4F
G
Input
Asynchronous Output Enable Input:
Low — enables output buffers (DQx pins).
High — DQx pins are high impedance.
4K
K
Input
Clock: This signal registers the address, data in, and all control signals
except G, LBO, and ZZ.
3R
LBO
Input
Linear Burst Order Input: This pin must remain in steady state (this
signal not registered or latched). It must be tied high or low.
Low — linear burst counter (68K/PowerPC).
High — interleaved burst counter (486/i960/Pentium).
2A, 3A, 5A, 6A, 3B, 5B, 6B, 2C, 3C, 5C,
6C, 2R, 6R, 2T, 3T, 5T, 6T
SA
Input
Synchronous Address Inputs: These inputs are registered and must
meet setup and hold times.
4N, 4P
SA1, SA0
Input
Synchronous Address Inputs: These pins must be wired to the two
LSBs of the address bus for proper burst operation. These inputs are
registered and must meet setup and hold times.
5L, 3G
(a) (b)
SBx
Input
Synchronous Byte Write Inputs: “x” refers to the byte being written (byte
a, b). SGW overrides SBx.
4E
SE1
Input
Synchronous Chip Enable: Active low to enable chip.
Negated high — blocks ADSP or deselects chip when ADSC is
asserted.
Freescale Semiconductor, Inc...
(a) 6D, 7E, 6F, 7G, 6H, 7K, 6L, 6N, 7P
(b) 1D, 2E, 2G, 1H, 2K, 1L, 2M, 1N, 2P
Description
Synchronous Data I/O: “x” refers to the byte being read or written
(byte a, b).
2B
SE2
Input
Synchronous Chip Enable: Active high for depth expansion.
4H
SGW
Input
Synchronous Global Write: This signal writes all bytes regardless of the
status of the SBx and SW signals. If only byte write signals SBx are
being used, tie this pin high.
4M
SW
Input
Synchronous Write: This signal writes only those bytes that have been
selected using the byte write SBx pins. If only byte write signals SBx
are being used, tie this pin low.
4U
TCK
Input
Boundary Scan Pin, Test Clock: If boundary scan is not used, TCK
must be tied to VDD or VSS.
Boundary Scan Pin, Test Data In.
3U
TDI
Input
5U
TDO
Output
2U
TMS
Input
Boundary Scan Pin, Test Mode Select.
6U
TRST
Input
Boundary Scan Pin, Asynchronous Test Reset: If boundary scan is not
used, TRST must be tied to VSS.
7T
ZZ
Input
Sleep Mode: This active high asynchronous signal places the RAM into
the lowest power mode. The ZZ pin disables the RAMs internal clock
when placed in this mode. When ZZ is negated, the RAM remains in
low power mode until it is commanded to READ or WRITE. Data
integrity is maintained upon returning to normal operation.
4C, 2J, 4J, 6J, 4R
VDD
VDDQ
VSS
Supply
Core Power Supply.
Supply
I/O Power Supply.
Supply
Ground.
NC
—
1A, 7A, 1F, 7F, 1J, 7J, 1M, 7M, 1U, 7U
3D, 5D, 3E, 5E, 3F, 5F, 5G, 3H, 5H, 3K,
5K, 3L, 3M, 5M, 3N, 5N, 3P, 5P
1B, 7B, 1C, 7C, 2D, 4D, 7D, 1E, 6E, 2F,
1G, 6G, 2H, 7H, 3J, 5J, 1K, 6K, 2L, 4L,
7L, 6M, 2N, 7N, 1P, 6P, 1R, 5R,
7R, 1T, 4T
MCM63P837•MCM63P919
8
Boundary Scan Pin, Test Data Out.
No Connection: There is no connection to the chip.
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MOTOROLA FAST SRAM
Freescale Semiconductor, Inc.
TRUTH TABLE (See Notes 1 Through 5)
Address
Used
SE1
SE2
SE3
ADSP
ADSC
ADV
G3
DQx
Write 2, 4
Deselect
None
1
X
X
X
0
X
X
High–Z
X
Deselect
None
0
X
1
0
X
X
X
High–Z
X
Deselect
None
0
0
X
0
X
X
X
High–Z
X
Deselect
None
X
X
1
1
0
X
X
High–Z
X
Deselect
None
X
0
X
1
0
X
X
High–Z
X
Begin Read
External
0
1
0
0
X
X
X
High–Z
X
Begin Read
Freescale Semiconductor, Inc...
Next Cycle
External
0
1
0
1
0
X
X
High–Z
READ
Continue Read
Next
X
X
X
1
1
0
1
High–Z
READ
Continue Read
Next
X
X
X
1
1
0
0
DQ
READ
Continue Read
Next
1
X
X
X
1
0
1
High–Z
READ
Continue Read
Next
1
X
X
X
1
0
0
DQ
READ
Suspend Read
Current
X
X
X
1
1
1
1
High–Z
READ
Suspend Read
Current
X
X
X
1
1
1
0
DQ
READ
Suspend Read
Current
1
X
X
X
1
1
1
High–Z
READ
Suspend Read
Current
1
X
X
X
1
1
0
DQ
READ
Begin Write
External
0
1
0
1
0
X
X
High–Z
WRITE
Continue Write
Next
X
X
X
1
1
0
X
High–Z
WRITE
Continue Write
Next
1
X
X
X
1
0
X
High–Z
WRITE
Suspend Write
Current
X
X
X
1
1
1
X
High–Z
WRITE
Suspend Write
Current
1
X
X
X
1
1
X
High–Z
WRITE
NOTES:
1. X = don’t care. 1 = logic high. 0 = logic low.
2. Write is defined as either 1) any SBx and SW low or 2) SGW is low.
3. G is an asynchronous signal and is not sampled by the clock K. G drives the bus immediately (tGLQX) following G going low.
4. On write cycles that follow read cycles, G must be negated prior to the start of the write cycle to ensure proper write data setup times. G must
also remain negated at the completion of the write cycle to ensure proper write data hold times.
ASYNCHRONOUS TRUTH TABLE
Operation
ZZ
G
I/O Status
Read
L
L
Data Out (DQx)
Read
L
H
High–Z
Write
L
X
High–Z
Deselected
L
X
High–Z
Sleep
H
X
High–Z
4th Address (Internal)
LINEAR BURST ADDRESS TABLE (LBO = VSS)
1st Address (External)
2nd Address (Internal)
3rd Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X10
X . . . X11
X . . . X00
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X00
X . . . X01
X . . . X10
4th Address (Internal)
INTERLEAVED BURST ADDRESS TABLE (LBO = VDD)
1st Address (External)
2nd Address (Internal)
3rd Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X00
X . . . X11
X . . . X10
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X10
X . . . X01
X . . . X00
MOTOROLA FAST SRAM
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MCM63P837•MCM63P919
9
Freescale Semiconductor, Inc.
WRITE TRUTH TABLE
SGW
SW
SBa
SBb
SBc
(See Note 1)
SBd
(See Note 1)
Read
H
H
X
X
X
X
Read
H
L
H
H
H
H
Write Byte a
H
L
L
H
H
H
Write Byte b
H
L
H
L
H
H
Write Byte c (See Note 1)
H
L
H
H
L
H
Write Byte d (See Note 1)
H
L
H
H
H
L
Write All Bytes
H
L
L
L
L
L
Write All Bytes
L
X
X
X
X
X
Cycle Type
NOTE:
1. Valid only for MCM63P837.
Freescale Semiconductor, Inc...
ABSOLUTE MAXIMUM RATINGS (See Note 1)
Rating
Power Supply Voltage
Symbol
Value
Unit
Notes
VDD
VSS – 0.5 to 4.6
V
VDDQ
VSS – 0.5 to VDD
V
2
Vin, Vout
VSS – 0.5 to
VDD + 0.5
V
2
Input Voltage (Three–State I/O)
VIT
VSS – 0.5 to
VDDQ + 0.5
V
2
Output Current (per I/O)
Iout
±20
mA
Package Power Dissipation
PD
1.6
W
Tbias
–10 to 85
°C
Tstg
–55 to 125
°C
I/O Supply Voltage
Input Voltage Relative to VSS for
Any Pin Except VDD
Temperature Under Bias
Storage Temperature
This device contains circuitry to protect the
inputs against damage due to high static voltages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maximum rated voltages to this high–impedance
circuit.
3
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. This is a steady–state DC parameter that is in effect after the power supply has
achieved its nominal operating level. Power sequencing is not necessary.
3. Power dissipation capability is dependent upon package characteristics and use
environment. See Package Thermal Characteristics.
MCM63P837•MCM63P919
10
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Freescale Semiconductor, Inc.
PACKAGE THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Notes
RθJA
40
25
°C/W
1, 2
Junction to Board (Bottom)
RθJB
17
°C/W
3
Junction to Case (Top)
RθJC
9
°C/W
4
RθJA
38
22
°C/W
1, 2
Junction to Board (Bottom)
RθJB
14
°C/W
3
Junction to Case (Top)
RθJC
5
°C/W
4
TQFP
Junction to Ambient (@ 200 lfm)
Single–Layer Board
Four–Layer Board
PBGA
Freescale Semiconductor, Inc...
Junction to Ambient (@ 200 lfm)
Single–Layer Board
Four–Layer Board
NOTES:
1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient
temperature, air flow, board population, and board thermal resistance.
2. Per SEMI G38–87.
3. Indicates the average thermal resistance between the die and the printed circuit board.
4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1).
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V ±5%, TA = 0 to 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS AND DC CHARACTERISTICS (Voltages Referenced to VSS = 0 V)
Symbol
Min
Typ
Max
Unit
VDD
3.135
3.3
3.465
V
I/O Supply Voltage
VDDQ
2.375
2.5
2.9
V
Input Low Voltage
VIL
–0.3*
—
0.7
V
Input High Voltage
VIH
1.7
—
VDD + 0.3**
V
Input High Voltage I/O Pins
VIH2
1.7
—
VDDQ + 0.3**
V
Output Low Voltage (IOL = 2 mA)
VOL
—
—
0.7
V
Output High Voltage (IOH = –2 mA)
VOH
1.7
—
—
V
VDD
3.135
3.3
3.465
V
VDDQ
3.135
3.3
VDD
V
Input Low Voltage
VIL
–0.5*
—
0.8
V
Input High Voltage
VIH
2
—
VDD + 0.5**
V
Input High Voltage I/O Pins
VIH2
2
—
VDDQ + 0.5**
V
Output Low Voltage (IOL = 8 mA)
VOL
—
—
0.4
V
Output High Voltage (IOH = –4 mA)
VOH
2.4
—
—
V
Parameter
2.5 V I/O SUPPLY
Supply Voltage
3.3 V I/O SUPPLY
Supply Voltage
I/O Supply Voltage
* Undershoot: VIL ≤ –1.5 V for t < 20% tKHKH.
** Overshoot: VIH/VIH2 ≤ VDD/VDDQ + 1.0 V (not to exceed 4.6 V) for t < 20% tKHKH.
MOTOROLA FAST SRAM
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MCM63P837•MCM63P919
11
Freescale Semiconductor, Inc.
SUPPLY CURRENTS
Symbol
Min
Typ
Max
Unit
Notes
Input Leakage Current (0 V ≤ Vin ≤ VDD)
Parameter
Ilkg(I)
—
—
±1
µA
1
Output Leakage Current (0 V ≤ Vin ≤ VDDQ)
Ilkg(O)
—
—
±1
µA
IDDA
—
—
TBD
mA
2, 3, 4
CMOS Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, All Inputs Static at CMOS Levels)
ISB2
—
—
TBD
mA
5, 6
Sleep Mode Supply Current (Device Deselected, Freq = Max,
VDD = Max, All Other Inputs Static at CMOS Levels,
ZZ ≥ VDD – 0.2 V)
IZZ
—
—
TBD
mA
1, 5, 6
TTL Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, All Inputs Static at TTL Levels)
ISB3
—
—
TBD
mA
5, 7
Clock Running (Device Deselected,
Freq = Max, VDD = Max, All Inputs
Toggling at CMOS Levels)
MCM63P837/919–225
MCM63P837/919–200
MCM63P837/919–166
ISB4
—
—
TBD
mA
5, 6
Static Clock Running (Device
Deselected, Freq = Max, VDD = Max,
All Inputs Static at TTL Levels)
MCM63P837/919–225
MCM63P837/919–200
MCM63P837/919–166
ISB5
—
—
TBD
mA
5, 7
Freescale Semiconductor, Inc...
AC Supply Current (Device Selected,
All Outputs Open, Freq = Max)
Includes VDD Only
MCM63P837/919–225
MCM63P837/919–200
MCM63P837/919–166
NOTES:
1. LBO and ZZ pins have an internal pull–up and pull–down, and will exhibit leakage currents of ±5 µA.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. All addresses transition simultaneously low (LSB) then high (MSB).
4. Data states are all zero.
5. Device is deselected as defined by the Truth Table.
6. CMOS levels for I/Os are VIT ≤ VSS + 0.2 V or ≥ VDDQ – 0.2 V. CMOS levels for other inputs are Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V.
7. TTL levels for I/Os are VIT ≤ VIL or ≥ VIH2. TTL levels for other inputs are Vin ≤ VIL or ≥ VIH.
CAPACITANCE (f = 1.0 MHz, TA = 0 to 70°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Min
Typ
Max
Unit
Input Capacitance
Cin
—
2
4
pF
Input/Output Capacitance
CI/O
—
3
5
pF
MCM63P837•MCM63P919
12
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Freescale Semiconductor, Inc.
AC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V ±5%, TA = 0 to 70°C, Unless Otherwise Noted)
Input Timing Measurement Reference Level . . . . . . . . . . . . . . . 1.5 V
Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 3.0 V
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . 2.5 V/ns (20% to 80%)
Output Timing Reference Level . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 V
Output Load . . . . . . . . . . . . . . See Figure 1 Unless Otherwise Noted
READ/WRITE CYCLE TIMING (See Notes 1 and 2)
MCM63P837–225
MCM63P919–225
Freescale Semiconductor, Inc...
Parameter
P
MCM63P837–200
MCM63P919–200
MCM63P837–166
MCM63P919–166
Symbol
S b l
Min
Max
Min
Max
Min
Max
Unit
U i
Notes
N
Cycle Time
tKHKH
4.4
—
5
—
6
—
ns
Clock High Pulse Width
tKHKL
1.7
—
2
—
2.4
—
ns
3
Clock Low Pulse Width
tKLKH
1.7
—
2
—
2.4
—
ns
3
Clock Access Time
tKHQV
—
2.6
—
3
—
3.5
ns
Output Enable to Output Valid
tGLQV
—
2.3
—
3
—
3
ns
Clock High to Output Active
tKHQX1
1
—
1
—
1
—
ns
4, 5
Clock High to Output Change
tKHQX2
1
—
1
—
1
—
ns
4
Output Enable to Output Active
tGLQX
0
—
0
—
0
—
ns
4, 5
Output Disable to Q High–Z
tGHQZ
—
2.3
—
3
—
3
ns
4, 5
Clock High to Q High–Z
tKHQZ
1
3
1
3
1
3
ns
4, 5
Sleep Mode Standby
tZZS
—
2
—
2
—
2
cycles
Sleep Mode Recovery
tZZREC
—
2
—
2
—
2
cycles
tZZQZ
—
15
—
15
—
15
ns
Sleep Mode to Q High–Z
Setup Times:
Address
ADSP, ADSC, ADV
Data In
Write
Chip Enable
tADKH
tADSKH
tDVKH
tWVKH
tEVKH
1
—
1
—
1.5
—
ns
Hold Times:
Address
ADSP, ADSC, ADV
Data In
Write
Chip Enable
tKHAX
tKHADSX
tKHDX
tKHWX
tKHEX
0.2
—
0.2
—
0.5
—
ns
NOTES:
1. Write is defined as either any SBx and SW low or SGW is low. Chip Enable is defined as SE1 low, SE2 high, and SE3 low whenever ADSP
or ADSC is asserted.
2. All read and write cycle timings are referenced from K or G.
3. In order to reduce test correlation issues and to reduce the effects of application specific input edge rate variations on correlation between
data sheet parameters and actual system performance, FSRAM AC parametric specifications are always specified at VDDQ/2. In some
design exercises, it is desirable to evaluate timing using other reference levels. Since the maximum test input edge rate is known and is
given in the AC Test Conditions section of the data sheet as 1 V/ns, one can easily interpolate timing values to other reference levels.
4. This parameter is sampled and not 100% tested.
5. Measured at ±200 mV from steady state.
OUTPUT
Z0 = 50 Ω
RL = 50 Ω
1.5 V
Figure 1. AC Test Load
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13
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CLOCK ACCESS TIME DELAY (ns)
5
OUTPUT
CL
4
3
TBD
2
1
0
0
20
40
60
80
100
LUMPED CAPACITANCE, CL (pF)
Freescale Semiconductor, Inc...
Figure 2. Lumped Capacitive Load and Typical Derating Curve
OUTPUT LOAD
OUTPUT
BUFFER
TEST POINT
UNLOADED RISE AND FALL TIME MEASUREMENT
INPUT
WAVEFORM
OUTPUT
WAVEFORM
2.4
2.4
0.6
0.6
2.4
2.4
0.6
tr
0.6
tf
NOTES:
1. Input waveform has a slew rate of 1 V/ns.
2. Rise time is measured from 0.6 to 2.4 V unloaded.
3. Fall time is measured from 2.4 to 0.6 V unloaded.
Figure 3. Unloaded Rise and Fall Time Characterization
MCM63P837•MCM63P919
14
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Q(n)
B
SINGLE READ
tKHQX1
A
Q(A)
Q(B)
tKHQX2
t KHQV
tKHKL
NOTE: E low = SE2 high and SE3 low.
W low = SGW low and/or SW and SBx low.
DESELECTED
tKHQZ
DQx
G
W
E
SE1
ADV
ADSC
ADSP
SA
K
tKHKH
Q(B+2)
BURST READ
Q(B+1)
tGHQZ
Q(B+3)
BURST WRAPS AROUND
tKLKH
Q(B)
ADSP, SA
SE2, SE3
IGNORED
READ/WRITE CYCLES
D(C)
C
D(C+2)
BURST WRITE
D(C+1)
Freescale Semiconductor, Inc...
D(C+3)
tGLQX
D
SINGLE READ
Q(D)
t KHQV
Freescale Semiconductor, Inc.
MCM63P837•MCM63P919
15
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16
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A
DESELECT
DQ Q (A)
G
W
E
SE1
ADV
ADSC
ADSP
SA
K
SINGLE
READ
B
D
SINGLE DESELECT SINGLE
READ
READ
Q (A)
C
SINGLE
READ
Q (C)
E
Q (D)
Q (E)
Q(E+2)
BURST READ
Q(E+1)
READ CYCLES
Q(E+3)
Q (E)
Freescale Semiconductor, Inc...
F
Q (F)
Q(F+2)
BURST READ
Q(F+1)
DESELECT
Q(F+3)
Freescale Semiconductor, Inc.
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DQ
G
W
E
SE1
ADV
ADSC
ADSP
SA
K
DESELECT
A
SINGLE
WRITE
D (A)
SINGLE
WRITE
D (B)
B
DESELECT
C
SINGLE
WRITE
D (C)
D (D)
D
SINGLE
WRITE
E
D (E)
D (E+2)
BURST WRITE
D (E+1)
WRITE CYCLES
D (E+3)
D (F)
F
DESELECT
Freescale Semiconductor, Inc...
D (F+2)
D (F+3)
BURST WRITE
D (F+1)
DESELECT
Freescale Semiconductor, Inc.
MCM63P837•MCM63P919
17
tZZREC
NO READS OR
WRITES ALLOWED
MCM63P837•MCM63P919
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IDD
ZZ
DQ
G
W
E
ADV
ADDR
ADS
K
NORMAL OPERATION
tZZS
tZZQZ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
NOTE: ADS low = ADSC low or ADSP low.
ADS high = both ADSC, ADSP high.
E low = SE1 low, SE2 high, SE3 low.
IZZ (max) specifications will not be met if inputs toggle.
I ZZ
IN SLEEP MODE
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
NO NEW READS OR
WRITES ALLOWED
SLEEP MODE TIMING
Freescale Semiconductor, Inc...
NORMAL OPERATION
Freescale Semiconductor, Inc.
MOTOROLA FAST SRAM
Freescale Semiconductor, Inc.
APPLICATION INFORMATION
Freescale Semiconductor, Inc...
SLEEP MODE
A sleep mode feature, the ZZ pin, has been implemented
on the MCM63P837 and MCM63P919. It allows the system
designer to place the RAM in the lowest possible power
condition by asserting ZZ. The sleep mode timing diagram
shows the different modes of operation: Normal Operation,
No READ/WRITE Allowed, and Sleep Mode. Each mode has
its own set of constraints and conditions that are allowed.
Normal Operation: All inputs must meet setup and hold
times prior to sleep and t ZZREC nanoseconds after recovering from sleep. Clock (K) must also meet cycle, high,
and low times during these periods. Two cycles prior to
sleep, initiation of either a read or write operation is not
allowed.
No READ/WRITE: During the period of time just prior to
sleep and during recovery from sleep, the assertion of either
ADSC, ADSP, or any write signal is not allowed. If a write
operation occurs during these periods, the memory array
may be corrupted. Validity of data out from the RAM can not
be guaranteed immediately after ZZ is asserted (prior to
being in sleep).
Sleep Mode: The RAM automatically deselects itself. The
RAM disconnects its internal clock buffer. The external clock
may continue to run without impacting the RAMs sleep
current (IZZ). All inputs are allowed to toggle — the RAM will
not be selected and perform any reads or writes. However, if
inputs toggle, the IZZ (max) specification will not be met.
Note: It is invalid to go from stop clock mode directly into
sleep mode.
NON–BURST SYNCHRONOUS OPERATION
Although this BurstRAM has been designed for PowerPC–
and other high end MPU–based systems, these SRAMs can
be used in other high speed L2 cache or memory applications that do not require the burst address feature. Most L2
caches designed with a synchronous interface can make use
of the MCM63P837 and MCM63P919. The burst counter
feature of the BurstRAM can be disabled, and the SRAM can
be configured to act upon a continuous stream of addresses.
See Figure 4.
CONTROL PIN TIE VALUES EXAMPLE (H ≥ VIH, L ≤ VIL)
Non–Burst
ADSP
ADSC
ADV
SE1
SE2
LBO
Sync Non–Burst,
Pipelined SRAM
H
L
H
L
H
X
NOTE: Although X is specified in the table as a don’t care, the pin
must be tied either high or low.
K
ADDR
A
B
C
D
E
F
G
H
SE3
W
G
DQ
Q(A)
Q(B)
Q(C)
Q(D)
D(E)
D(F)
READS
D(G)
D(H)
WRITES
Figure 4. Example Configuration as Non–Burst Synchronous SRAM
MOTOROLA FAST SRAM
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SERIAL BOUNDARY SCAN TEST ACCESS PORT OPERATION
OVERVIEW
The serial boundary scan test access port (TAP) on this
RAM is designed to operate in a manner consistent with
IEEE Standard 1149.1–1990 (commonly referred to as
JTAG), but does not implement all of the functions required
for IEEE 1149.1 compliance. Certain functions have been
modified or eliminated because their implementation places
extra delays in the RAMs critical speed path. Nevertheless,
the RAM supports the standard TAP controller architecture
(the TAP controller is the state machine that controls the
TAPs operation) and can be expected to function in a manner
that does not conflict with the operation of devices with IEEE
Standard 1149.1 compliant TAPs. The TAP operates using a
3.3 V tolerant logic level signaling.
DISABLING THE TEST ACCESS PORT
It is possible to use this device without utilizing the TAP. To
disable the TAP controller without interfering with normal
operation of the device, TRST should be tied low and TCK,
TDI, and TMS should be pulled through a resistor to 3.3 V.
TDO should be left unconnected.
TAP DC OPERATING CHARACTERISTICS
Freescale Semiconductor, Inc...
(TA = 0 to 70°C, Unless Otherwise Noted)
Parameter
Symbol
Min
Max
Unit
Input Logic Low
VIL1
–0.5
0.8
V
Input Logic High
VIH1
2
3.6
V
Ilkg
—
±10
µA
1
Output Logic Low
VOL1
—
0.4
V
2
Output Logic High
VOH1
2.4
—
V
Input Leakage Current
Notes
NOTES:
1. 0 V ≤ Vin ≤ VDDQ for all logic input pins.
2. For VOL = 0.4 V, 14 mA ≤ IOL ≤ 28 mA.
MCM63P837•MCM63P919
20
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Freescale Semiconductor, Inc.
TAP AC OPERATING CONDITIONS AND CHARACTERISTICS
(TA = 0 to 70°C, Unless Otherwise Noted)
AC TEST CONDITIONS
Parameter
Value
Unit
1.5
V
0 to 3.0
V
1
V/ns
Output Timing Reference Level
1.5
V
Output Load (See Figure 1 Unless Otherwise Noted)
—
—
Input Timing Reference Level
Input Pulse Levels
Input Rise/Fall Time (20% to 80%)
TAP CONTROLLER TIMING
Parameter
Symbol
Min
Max
Unit
tTHTH
60
—
ns
TCK Clock High Time
tTH
25
—
ns
TCK Clock Low Time
tTL
25
—
ns
Freescale Semiconductor, Inc...
TCK Cycle Time
TDO Access Time
tTLQV
1
10
ns
TRST Pulse Width
tTSRT
40
—
ns
Notes
Setup Times
Capture
TDI
TMS
tCS
tDVTH
tMVTH
5
5
5
—
ns
1
Hold Times
Capture
TDI
TMS
tCH
tTHDX
tTHMX
13
14
14
—
ns
1
NOTE:
1. tCS and tCH define the minimum pauses in RAM I/O transitions to assure accurate pad data capture.
TAP CONTROLLER TIMING DIAGRAM
tTHTH
tTLTH
TEST CLOCK
(TCK)
tTHTL
tTHMX
tMVTH
TEST MODE SELECT
(TMS)
tTHDX
tDVTH
TEST DATA IN
(TDI)
tTLQV
TEST DATA OUT
(TDO)
MOTOROLA FAST SRAM
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Freescale Semiconductor, Inc...
MCM63P837 BOUNDARY SCAN ORDER
Bit No.
Signal Name
Bump ID
Bit No.
Signal Name
Bump ID
1
SA
TBD
36
SE3
TBD
2
SA
TBD
37
SBa
TBD
3
SA
TBD
38
SBb
TBD
4
SA
TBD
39
SBc
TBD
5
SA
TBD
40
SBd
TBD
6
SA
TBD
41
SE2
TBD
7
SA
TBD
42
SE1
TBD
8
DQa
TBD
43
SA
TBD
9
DQa
TBD
44
SA
TBD
10
DQa
TBD
45
DQc
TBD
11
DQa
TBD
46
DQC
TBD
12
DQa
TBD
47
DQc
TBD
13
DQa
TBD
48
DQc
TBD
14
DQa
TBD
49
DQc
TBD
15
DQa
TBD
50
DQc
TBD
16
DQa
TBD
51
DQc
TBD
17
ZZ
TBD
52
DQc
TBD
18
DQb
TBD
53
DQc
TBD
19
DQb
TBD
54
VDD
TBD
20
DQb
TBD
55
DQd
TBD
21
DQb
TBD
56
DQd
TBD
22
DQb
TBD
57
DQd
TBD
23
DQb
TBD
58
DQd
TBD
24
DQb
TBD
59
DQd
TBD
25
DQb
TBD
60
DQd
TBD
26
DQb
TBD
61
DQd
TBD
27
SA
TBD
62
DQd
TBD
28
SA
TBD
63
DQd
TBD
29
ADV
TBD
64
LBO
TBD
30
ADSP
TBD
65
SA
TBD
31
ADSC
TBD
66
SA
TBD
32
G
TBD
67
SA
TBD
33
SW
TBD
68
SA
TBD
34
SGW
TBD
69
SA1
TBD
35
K
TBD
70
SA0
TBD
MCM63P837•MCM63P919
22
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Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
MCM63P919 BOUNDARY SCAN ORDER
Bit No.
Signal Name
Bump ID
Bit No.
Signal Name
Bump ID
1
SA
TBD
26
SGW
TBD
2
SA
TBD
27
K
TBD
3
SA
TBD
28
SE3
TBD
4
SA
TBD
29
SBa
TBD
5
SA
TBD
30
SBb
TBD
31
SE2
TBD
32
SE1
TBD
33
SA
TBD
34
SA
TBD
35
DQb
TBD
36
DQb
TBD
37
DQb
TBD
38
VDD
TBD
39
DQb
TBD
40
DQb
TBD
41
DQb
TBD
42
DQb
TBD
43
DQb
TBD
6
SA
TBD
7
SA
TBD
8
DQa
TBD
9
DQa
TBD
10
DQa
TBD
11
DQa
TBD
12
ZZ
TBD
13
DQa
TBD
14
DQa
TBD
15
DQa
TBD
16
DQa
TBD
17
DQa
TBD
18
SA
TBD
44
DQb
TBD
19
SA
TBD
45
LBO
TBD
20
SA
TBD
46
SA
TBD
21
ADV
TBD
47
SA
TBD
22
ADSP
TBD
48
SA
TBD
23
ADSC
TBD
49
SA
TBD
24
G
TBD
50
SA1
TBD
25
SW
TBD
51
SA0
TBD
MOTOROLA FAST SRAM
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TEST ACCESS PORT PINS
TCK — TEST CLOCK (INPUT)
Clocks all TAP events. All inputs are captured on the rising
edge of TCK and all outputs propagate from the falling edge
of TCK.
TMS — TEST MODE SELECT (INPUT)
The TMS input is sampled on the rising edge of TCK. This
is the command input for the TAP controller state machine.
An undriven TMS input will not produce the same result as a
logic 1 input level (not IEEE 1149.1 compliant).
Freescale Semiconductor, Inc...
TDI — TEST DATA IN (INPUT)
The TDI input is sampled on the rising edge of TCK. This is
the input side of the serial registers placed between TDI and
TDO. The register placed between TDI and TDO is determined by the state of the TAP controller state machine and
the instruction that is currently loaded in the TAP instruction
register (see Figure 7). An undriven TDI pin will not produce
the same result as a logic 1 input level (not IEEE 1149.1 compliant).
TDO — TEST DATA OUT (OUTPUT)
Output that is active depending on the state of the TAP
state machine (see Figure 7). Output changes in response to
the falling edge of TCK. This is the output side of the serial
registers placed between TDI and TDO.
TRST — TAP RESET
The TRST is an asynchronous input that resets the TAP
controller and preloads the instruction register with the
IDCODE command. This type of reset does not affect the
operation of the system logic. The reset affects test logic
only.
TEST ACCESS PORT REGISTERS
OVERVIEW
The various TAP registers are selected (one at a time) via
the sequences of 1s and 0s input to the TMS pin as the TCK
is strobed. Each of the TAPs registers are serial shift registers that capture serial input data on the rising edge of TCK
and push serial data out on subsequent falling edge of TCK.
When a register is selected it is “placed” between the TDI
and TDO pins.
The boundary scan register is identical in length to the
number of active input and I/O connections on the RAM (not
counting the TAP pins). This also includes a number of place
holder locations (always set to a logic 0) reserved for density
upgrade address pins. There are a total of 69 bits in the case
of the x36 device and 50 bits in the case of the x18 device.
The boundary scan register, under the control of the TAP
controller, is loaded with the contents of the RAMs I/O ring
when the controller is in capture–DR state and then is placed
between the TDI and TDO pins when the controller is moved
to shift–DR state.
The Bump/Bit Scan Order table describes which device
bump connects to each boundary scan register location. The
first column defines the bit’s position in the boundary scan
register. The shift register bit nearest TDO (i.e., first to be
shifted out) is defined as bit 1. The second column is the
name of the input or I/O at the bump and the third column is
the bump number.
IDENTIFICATION (ID) REGISTER
The ID register is a 32–bit register that is loaded with a
device and vendor specific 32–bit code when the controller is
put in capture–DR state with the IDCODE command loaded
in the instruction register. The code is loaded from a 32–bit
on–chip ROM. It describes various attributes of the RAM as
indicated below. The register is then placed between the TDI
and TDO pins when the controller is moved into shift–DR
state. Bit 0 in the register is the LSB and the first to reach
TDO when shifting begins.
ID Register Presence Indicator
Bit No.
0
Value
1
Motorola JEDEC ID Code (Compressed Format, per
IEEE Standard 1149.1–1990
Bit No.
11
10
9
8
7
6
5
4
3
2
1
Value
0
0
0
0
0
0
0
1
1
1
0
Reserved For Future Use
Bit No.
17
16
15
14
13
12
Value
x
x
x
x
x
x
Device Width
INSTRUCTION REGISTER
The instruction register holds the instructions that are
executed by the TAP controller when it is moved into the run
test/idle or the various data register states. The instructions
are 3 bits long. The register can be loaded when it is placed
between the TDI and TDO pins. The parallel outputs of the
instruction register are automatically preloaded with the IDCODE instruction when TRST is asserted or whenever the
controller is placed in the test–logic–reset state. The two
least significant bits of the serial instruction register are
loaded with a binary “or” pattern in the capture–IR state.
BYPASS REGISTER
The bypass register is a single bit register that can be
placed between TDI and TDO. It allows serial test data to be
passed through the RAMs TAP to another device in the scan
chain with as little delay as possible.
MCM63P837•MCM63P919
24
BOUNDARY SCAN REGISTER
Bit No.
22
21
20
19
18
256K x 36
0
0
1
0
0
512K x 18
0
0
0
1
1
Bit No.
27
26
25
24
23
256K x 36
0
0
1
1
0
512K x 18
0
0
1
1
1
Device Depth
Revision Number
Bit No.
31
30
29
28
Value
0
0
0
1
Figure 5. ID Register Bit Meanings
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TAP CONTROLLER INSTRUCTION SET
Freescale Semiconductor, Inc...
OVERVIEW
There are two classes of instructions defined in the IEEE
Standard 1149.1–1990; the standard (public) instructions
and device specific (private) instructions. Some public
instructions, are mandatory for IEEE 1149.1 compliance.
Optional public instructions must be implemented in prescribed ways.
Although the TAP controller in this device follows the IEEE
1149.1 conventions, it is not IEEE 1149.1 compliant because
some of the mandatory instructions are not fully implemented. The TAP on this device may be used to monitor all
input and I/O pads, but can not be used to load address,
data, or control signals into the RAM or to preload the I/O
buffers. In other words, the device will not perform IEEE
1149.1 EXTEST, INTEST, or the preload portion of the
SAMPLE/PRELOAD command.
When the TAP controller is placed in capture–IR state, the
two least significant bits of the instruction register are loaded
with 01. When the controller is moved to the shift–IR state
the instruction register is placed between TDI and TDO. In
this state the desired instruction is serially loaded through the
TDI input (while the previous contents are shifted out at
TDO). For all instructions, the TAP executes newly loaded
instructions only when the controller is moved to update–IR
state. The TAP instruction sets for this device are listed in the
following tables.
STANDARD (PUBLIC) INSTRUCTIONS
BYPASS
The BYPASS instruction is loaded in the instruction register when the bypass register is placed between TDI and
TDO. This occurs when the TAP controller is moved to the
shift–DR state. This allows the board level scan path to be
shortened to facilitate testing of other devices in the scan
path.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is an IEEE 1149.1 mandatory public
instruction. When the SAMPLE/PRELOAD instruction is
loaded in the Instruction register, moving the TAP controller
out of the capture–DR state loads the data in the RAMs input
and I/O buffers into the boundary scan register. Because the
RAM clock(s) are independent from the TAP clock (TCK), it is
MOTOROLA FAST SRAM
possible for the TAP to attempt to capture the I/O ring contents while the input buffers are in transition (i.e., in a metastable state). Although allowing the TAP to sample metastable
inputs will not harm the device, repeatable results can not be
expected. RAM input signals must be stabilized for long
enough to meet the TAPs input data capture setup plus hold
time (tCS plus tCH). The RAMs clock inputs need not be
paused for any other TAP operation except capturing the I/O
ring contents into the boundary scan register.
Moving the controller to shift–DR state then places the
boundary scan register between the TDI and TDO pins.
Because the PRELOAD portion of the command is not
implemented in this device, moving the controller to the update–DR state with the SAMPLE/PRELOAD instruction
loaded in the instruction register has the same effect as the
pause–DR command. This functionality is not IEEE 1149.1
compliant.
EXTEST
EXTEST is an IEEE 1149.1 mandatory public instruction. It
is to be executed whenever the instruction register, whatever
length it may be in the device, is loaded with all logic 0s. EXTEST is not implemented in this device.
IDCODE
The IDCODE instruction causes the ID ROM to be loaded
into the ID register when the controller is in capture–DR
mode and places the ID register between the TDI and TDO
pins in shift–DR mode. The IDCODE instruction is the default
instruction loaded in at TRST assertion and any time the controller is placed in the test–logic–reset state.
THE DEVICE SPECIFIC (PUBLIC) INSTRUCTION
SAMPLE–Z
If the HIGH–Z instruction is loaded in the instruction register, all DQ pins are forced to an inactive drive state (High–Z)
and the bypass register is connected between TDI and TDO
when the TAP controller is moved to the shift–DR state.
THE DEVICE SPECIFIC (PRIVATE) INSTRUCTION
NO OP
Do not use these instructions; they are reserved for future
use.
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STANDARD AND DEVICE SPECIFIC (PUBLIC) INSTRUCTION CODES
Instruction
Code*
Description
IDCODE
001**
Preloads ID register and places it between TDI and TDO. Does not affect RAM operation.
HIGH–Z
010
Captures I/O ring contents. Places the bypass register between TDI and TDO. Forces all DQ pins
to High–Z. NOT IEEE 1149.1 COMPLIANT.
BYPASS
011
Places bypass register between TDI and TDO. Does not affect RAM operation. NOT IEEE 1149.1
COMPLIANT.
SAMPLE/PRELOAD
100
Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Does not
affect RAM operation.
Does not implement IEEE 1149.1 Preload function. NOT IEEE 1149.1 COMPLIANT.
* Instruction codes expressed in binary, MSB on left, LSB on right.
** Default instruction automatically loaded when TRST asserted or in test–logic–reset state.
STANDARD (PRIVATE) INSTRUCTION CODES
Freescale Semiconductor, Inc...
Instruction
Code*
Description
NO OP
000
Do not use these instructions; they are reserved for future use.
NO OP
101
Do not use these instructions; they are reserved for future use.
NO OP
110
Do not use these instructions; they are reserved for future use.
NO OP
111
Do not use these instructions; they are reserved for future use.
* Instruction codes expressed in binary, MSB on left, LSB on right.
1
TEST–LOGIC
RESET
0
0
RUN–TEST/
IDLE
1
SELECT
DR–SCAN
SELECT
IR–SCAN
1
0
1
1
0
1
CAPTURE–DR
CAPTURE–IR
0
0
SHIFT–IR
SHIFT–DR
0
0
1
1
1
1
EXIT1–DR
EXIT1–IR
0
0
PAUSE–DR
PAUSE–IR
0
1
0
1
EXIT2–DR
0
EXIT2–IR
1
1
UPDATE–DR
1
0
0
UPDATE–IR
1
0
NOTE: The value adjacent to each state transition represents the signal present at TMS at the rising edge of TCK.
Figure 6. TAP Controller State Diagram
MCM63P837•MCM63P919
26
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ORDERING INFORMATION
(Order by Full Part Number)
MCM
63P837
63P919
XX
X
X
Motorola Memory Prefix
Blank = Trays, R = Tape and Reel
Part Number
Speed (225 = 225 MHz, 200 = 200 MHz,
166 = 166 MHz)
Package (TQ = TQFP, ZP = PBGA)
MCM63P837TQ200
MCM63P837TQ200R
MCM63P837ZP200
MCM63P837ZP200R
MCM63P837TQ166
MCM63P837TQ166R
MCM63P837ZP166
MCM63P837ZP166R
MCM63P919TQ225
MCM63P919TQ225R
MCM63P919ZP225
MCM63P919ZP225R
MCM63P919TQ200
MCM63P919TQ200R
MCM63P919ZP200
MCM63P919ZP200R
MCM63P919TQ166
MCM63P919TQ166R
MCM63P919ZP166
MCM63P919ZP166R
Freescale Semiconductor, Inc...
Full Part Numbers — MCM63P837TQ225
MCM63P837TQ225R
MCM63P837ZP225
MCM63P837ZP225R
MOTOROLA FAST SRAM
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PACKAGE DIMENSIONS
TQ PACKAGE
TQFP
CASE 983A–01
e
4X
0.20 (0.008) H A–B D
2X 30 TIPS
e/2
0.20 (0.008) C A–B D
–D–
80
51
B
50
81
–A–
–X–
X=A, B, OR D
B
E/2
–B–
VIEW Y
E1 E
BASE
METAL
PLATING
Freescale Semiconductor, Inc...
c
31
100
1
30
D1/2
0.13 (0.005)
0.20 (0.008) C A–B D
A
2
0.10 (0.004) C
–H–
–C–
3
SEATING
PLANE
VIEW AB
S
S
0.25 (0.010)
R2
A2
L2
L
L1
GAGE PLANE
VIEW AB
MCM63P837•MCM63P919
28
C A–B
S
D
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DATUM PLANE –H– IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DATUMS –A–, –B– AND –D– TO BE DETERMINED
AT DATUM PLANE –H–.
5. DIMENSIONS D AND E TO BE DETERMINED AT
SEATING PLANE –C–.
6. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS 0.25
(0.010) PER SIDE. DIMENSIONS D1 AND B1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE –H–.
7. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. DAMBAR PROTRUSION SHALL
NOT CAUSE THE b DIMENSION TO EXCEED 0.45
(0.018).
1
R1
M
SECTION B–B
2X 20 TIPS
A1
c1
b
D/2
D1
D
0.05 (0.002)
ÉÉÉÉ
ÇÇÇÇ
ÇÇÇÇ
ÉÉÉÉ
b1
E1/2
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DIM
A
A1
A2
b
b1
c
c1
D
D1
E
E1
e
L
L1
L2
S
R1
R2
1
2
3
MILLIMETERS
MIN
MAX
–––
1.60
0.05
0.15
1.35
1.45
0.22
0.38
0.22
0.33
0.09
0.20
0.09
0.16
22.00 BSC
20.00 BSC
16.00 BSC
14.00 BSC
0.65 BSC
0.45
0.75
1.00 REF
0.50 REF
0.20
–––
0.08
–––
0.08
0.20
0
7
0
–––
11 13 11 13 INCHES
MIN
MAX
–––
0.063
0.002
0.006
0.053
0.057
0.009
0.015
0.009
0.013
0.004
0.008
0.004
0.006
0.866 BSC
0.787 BSC
0.630 BSC
0.551 BSC
0.026 BSC
0.018
0.030
0.039 REF
0.020 REF
0.008
–––
0.003
–––
0.003
0.008
0
7
0
–––
11 13 11 13 MOTOROLA FAST SRAM
Freescale Semiconductor, Inc.
ZP PACKAGE
PBGA
CASE 999–02
0.20
4X
119X
E
C
B
D
Freescale Semiconductor, Inc...
E2
e
6X
M
A B C
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
D1
16X
M
0.15
7 6 5 4 3 2 1
D2
b
0.3
DIM
A
A1
A2
A3
D
D1
D2
E
E1
E2
b
e
e
E1
TOP VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. ALL DIMENSIONS IN MILLIMETERS.
3. DIMENSION b IS THE MAXIMUM SOLDER BALL
DIAMETER MEASURED PARALLEL TO DATUM A.
4. DATUM A, THE SEATING PLANE, IS DEFINED BY
THE SPHERICAL CROWNS OF THE SOLDER
BALLS.
BOTTOM VIEW
MILLIMETERS
MIN
MAX
–––
2.40
0.50
0.70
1.30
1.70
0.80
1.00
22.00 BSC
20.32 BSC
19.40
19.60
14.00 BSC
7.62 BSC
11.90
12.10
0.60
0.90
1.27 BSC
0.25 A
A3
0.35 A
0.20 A
A
A2
A1
SIDE VIEW
SEATING
PLANE
A
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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Mfax is a trademark of Motorola, Inc.
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MCM63P837/D
MCM63P837•MCM63P919
29
Freescale Semiconductor, Inc...
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com