MITSUBISHI Nch POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 +0.3 0 –0 (1.5) FS50VS-3 1 B 5 0.5 q w e wr ¡10V DRIVE ¡VDSS ................................................................................ 150V ¡rDS (ON) (MAX) .............................................................. 31mΩ ¡ID ......................................................................................... 50A ¡Integrated Fast Recovery Diode (TYP.) ........... 130ns 2.6 ± 0.4 4.5 0.8 q GATE w DRAIN e SOURCE r DRAIN q e TO-220S APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Ratings Unit VDSS Drain-source voltage VGS = 0V 150 V VGSS ID Gate-source voltage Drain current VDS = 0V ±20 50 V A IDM IDA Drain current (Pulsed) Avalanche drain current (Pulsed) 200 50 A A IS ISM Source current Source current (Pulsed) 50 200 A A PD T ch Maximum power dissipation Channel temperature 125 –55 ~ +150 W °C –55 ~ +150 °C g T stg — Parameter Conditions L = 100µH Storage temperature Weight Typical value 1.2 Feb.1999 MITSUBISHI Nch POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS IGSS Drain-source breakdown voltage Gate-source leakage current IDSS VGS (th) Drain-source leakage current Gate-source threshold voltage rDS (ON) Drain-source on-state resistance VDS (ON) y fs Drain-source on-state voltage Forward transfer admittance Ciss Coss Input capacitance Output capacitance Crss td (on) Reverse transfer capacitance Turn-on delay time tr td (off) Rise time Turn-off delay time tf Fall time VSD Rth (ch-c) Source-drain voltage Thermal resistance trr Reverse recovery time Limits Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 150V, V GS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V Unit Min. Typ. Max. 150 — — — — ±0.1 V µA — 2.0 — 3.0 0.1 4.0 mA V — 24 31 mΩ ID = 25A, VDS = 10V — — 0.600 55 0.775 — V S VDS = 10V, VGS = 0V, f = 1MHz — — 6540 860 — — pF pF — — 360 95 — — pF ns — — 155 380 — — ns ns — 180 — ns — — 1.0 — 1.5 1.0 — 130 — V °C/W ns ID = 25A, VGS = 10V VDD = 80V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = –100A/µs PERFORMANCE CURVES DRAIN CURRENT ID (A) 160 120 80 40 0 0 50 100 150 102 7 5 3 2 tw = 10ms 100ms 101 7 5 3 2 1ms 10ms 100 DC 7 TC = 25°C 5 Single Pulse 3 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 CASE TEMPERATURE TC (°C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V 8V 100 TC = 25°C Pulse Test 40 5V PD = 125W 20 TC = 25°C Pulse Test 6V 6V 80 60 10V 7V 50 7V DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 VGS = 20V DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 40 5V 30 20 10 4V 0 0 1.0 2.0 3.0 4.0 5.0 DRAIN-SOURCE VOLTAGE VDS (V) 0 0 0.4 0.8 1.2 1.6 2.0 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40 2.0 1.6 80A 1.2 50A 0.8 0.4 0 20A TC = 25°C Pulse Test 0 4 8 12 16 TC = 25°C VDS = 10V Pulse Test FORWARD TRANSFER ADMITTANCE yfs (S) 20 0 4 8 12 16 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 102 VDS = 10V 7 Pulse Test 5 4 3 2 TC = 25°C 75°C 125°C 101 7 5 4 3 100 0 10 20 2 3 4 5 7 101 2 3 4 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) Ciss Coss Crss 102 7 Tch = 25°C 5 f = 1MHZ 3 VGS = 0V 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 8 2 2 103 7 5 3 2 20V 16 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 40 7 5 3 2 VGS = 10V TRANSFER CHARACTERISTICS (TYPICAL) 60 104 24 DRAIN CURRENT ID (A) 80 0 32 0 20 TC = 25°C Pulse Test GATE-SOURCE VOLTAGE VGS (V) 100 DRAIN CURRENT ID (A) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (mΩ) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) ID = 100A 103 7 5 4 3 2 102 7 5 4 3 td(off) tf tr td(on) Tch = 25°C VDD = 80V VGS = 10V RGEN = RGS = 50Ω 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FS50VS-3 HIGH-SPEED SWITCHING USE 20 SOURCE CURRENT IS (A) VDS = 50V 12 80V 100V 8 4 0 40 80 120 160 75°C 25°C 40 20 0 0.4 0.8 1.2 1.6 2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 2 100 7 5 4 3 2 –50 0 50 100 VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 150 CHANNEL TEMPERATURE Tch (°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 TC = 125°C 60 0 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 4 3 10–1 VGS = 0V Pulse Test 80 200 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) 100 Tch = 25°C ID = 50A 16 0 DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 D = 1.0 100 7 0.5 5 3 0.2 2 0.1 PDM 10–1 7 5 3 2 tw 0.05 0.02 0.01 Single Pulse T D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999