TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE JDV4P08U Unit in mm ○ VCO FOR UHF BAND RADIO RATING UNIT 10 V 125 ℃ −55 〜 125 ℃ 2 3 +0.1 0.2−0.05 4 0~0.1 SYMBOL VR Tj Tstg +0.05 0.95−0.15 MAXIMUM RATINGS(Ta = 25℃) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range 1 0.15±0. 05 Ultra Low Series Resistance : rs = 0.30Ω (Typ.) 0.7 ● 2.0±0.2 Small Package 1.3±0.1 2.1 ±0.1 1.25 ±0.1 ● 1.ANODE 1 2.ANODE 2 3.CATHODE 2 4.CATHODE 1 USQ JEDEC EIAJ TOSHIBA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION Reverse Voltage VR IR = 1 μA Reverse Current IR VR = 10 V Capacitance C1V VR = 1 V , f = 1 MHz Capacitance C4V VR = 4 V , f = 1 MHz Capacitance Ratio C1V/ C4V − Series Resistance rs VR = 1 V , f = 470 MHz Marking 4 ・ 1 3 TV 2 MIN. 10 − 17.3 5.3 2.8 − 1‑2U1A TYP. − − 18.3 6.1 3.0 0.3 MAX. − 3 19.3 6.6 − 0.5 UNIT V nA pF pF − Ω