Toshiba JDV4P08U Toshiba variable capacitance diode silicon epitaxial planar type Datasheet

TOSHIBA VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR TYPE
JDV4P08U
Unit in mm
○ VCO FOR UHF BAND RADIO
RATING
UNIT
10
V
125
℃
−55 〜 125
℃
2
3
+0.1
0.2−0.05
4
0~0.1
SYMBOL
VR
Tj
Tstg
+0.05
0.95−0.15
MAXIMUM RATINGS(Ta = 25℃)
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
1
0.15±0. 05
Ultra Low Series Resistance : rs = 0.30Ω (Typ.)
0.7
●
2.0±0.2
Small Package
1.3±0.1
2.1 ±0.1
1.25 ±0.1
●
1.ANODE 1
2.ANODE 2
3.CATHODE 2
4.CATHODE 1
USQ
JEDEC
EIAJ
TOSHIBA
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Voltage
VR
IR =
1 μA
Reverse Current
IR
VR = 10 V
Capacitance
C1V
VR = 1 V , f =
1 MHz
Capacitance
C4V
VR = 4 V , f =
1 MHz
Capacitance Ratio
C1V/ C4V
−
Series Resistance
rs
VR = 1 V , f = 470 MHz
Marking
4
・
1
3
TV
2
MIN.
10
−
17.3
5.3
2.8
−
1‑2U1A
TYP.
−
−
18.3
6.1
3.0
0.3
MAX.
−
3
19.3
6.6
−
0.5
UNIT
V
nA
pF
pF
−
Ω
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