Doc No. TT4-EA-11769 Revision. 4 Product Standards Switching Diode DA3X101A0L DA3X101A0L Silicon epitaxial planar type Unit: mm For high speed switching circuits DA3J101A in Mini3 type package 2.9 0.4 0.16 3 Features 1.5 2.8 Small reverse current IR Short reverse recovery time trr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 1.1 Marking Symbol: 20 (0.95)(0.95) 1.9 Packaging 1. Cathode 2. NC 3. Anode Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25 C Parameter Symbol Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current Junction temperature Operating ambient temperature Storage temperature Note) *1 VR VRM IF IFM IFSM Tj Topr Tstg Mini3-G3-B SC-59A TO-236AA/SOT-23 Panasonic JEITA Code Rating Unit 80 80 100 225 500 150 -40 to +85 -55 to +150 V V mA mA mA °C °C °C Internal Connection 3 1 2 *1: t = 1 s Page 1 of 4 Established : 2009-11-06 Revised : 2013-06-12 Doc No. TT4-EA-11769 Revision. 4 Product Standards Switching Diode DA3X101A0L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Forward voltage Reverse voltage Reverse current Terminal capacitance Reverse recovery time Note) VF VR IR Ct *1 trr Conditions Min IF = 100 mA IR = 100 μA VR = 80 V VR = 0 V , f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.25 x IR Typ Max Unit 0.92 1.20 100 1.2 V V nA pF 3 ns 80 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *1: trr test circuit Input Pulse Bias Application Unit (N-50BU) tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω VR Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 μs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.25 × IR IF = 10 mA VR = 6 V Page 2 of 4 Established : 2009-11-06 Revised : 2013-06-12 Doc No. TT4-EA-11769 Revision. 4 Product Standards Switching Diode DA3X101A0L Technical Data ( reference ) IF - VF IR - VR 1.E-05 Ta = 125 °C 1.E-01 Reverse current IR (A) Forward current IF (A) 1.E+00 1.E-02 85 °C 1.E-03 25 °C 1.E-04 1.E-05 1.E-06 0.0 -40 °C IR value is not exceeding 100 pA at -40 °C 1.E-06 Ta = 125 °C 85 °C 1.E-07 1.E-08 25 °C 1.E-09 1.E-10 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) 0 20 40 60 80 Reverse voltage VR (V) Ct - VR Terminal capacitance Ct (pF) 1.2 Ta = 25 °C f = 1 MHz 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 30 40 Reverse voltage VR (V) Page 3 of 4 Established : 2009-11-06 Revised : 2013-06-12 Doc No. TT4-EA-11769 Revision. 4 Product Standards Switching Diode DA3X101A0L Mini3-G3-B Unit: mm +0.20 2.90-0.05 +0.10 0.16-0.06 +0.10 0.40-0.05 (5°) +0.2 2 1.9±0.1 0.4±0.2 (0.95) (0.95) (0.65) 1 2.8-0.3 +0.25 1.50-0.05 3 +0.3 1.1-0.1 +0.2 0 to 0.1 1.1-0.1 (10°) Land Pattern (Reference) (Unit: mm) 2.4 1.0 1.0 1.9 Page 4 of 4 Established : 2009-11-06 Revised : 2013-06-12 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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