RoHS MBR3045PT / MBR3060PT Series RoHS SEMICONDUCTOR Nell Semiconductors Dual Common-Cathode Schottky Rectifier, Available 30A (15A x 2), 45V / 60V RoHS* COMPLIANT FEATURES 150°C T J operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness, long term reliability and overvoltage protection Compliant to RoHS Designed and qualified according to JEDEC-JESD47 Solder bath temperature 260°C maximum, 40 s per JESD 22B-106 (for TO-247AB package) 1 2 3 TO-247AB CASE PIN 2 DESCRIPTION PIN 1 The MBR3045PT Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150°C junction temperature. PIN 3 APPLICATIONS Switching mode power supplies DC to DC converters Freewheeling diodes Reverse battery protection. MECHANICAL DATA PRODUCT SUMMARY Case: TO-247AB (TO-3P) Molding compound meets UL 94 V-O flammability rating Terminals: Mat tin plated leads, solderable per J-STD-002 and JESD 22-B102 Polarity: As marked Mounting Torque: 10 in-lbs maximum l F(AV) 15A x 2 VR 45V / 60V V F at l F 0.57V / 0.65V l RM max . 60 / 100 mA at 125°C T J max. 150°C Diode variation Dual dice, Common cathode E AS 10 mJ MAJOR RATINGS AND CHARACTERISTICS SYMBOL l F(AV) VALUE CHARACTERISTICS MBR3045PT Rectangular waveform 15 x 2 V RRM l FSM I RRM MBR3060PT 45 t p = 5 μs sine Peak repetitive reverse surge current per Note (1) 2.0 µs pulse width, < f = 1.0 kHz www.nellsemi.com A 60 1020 diode (1) Page 1 of 5 2.0 UNIT V A 1.0 A RoHS MBR3045PT / MBR3060PT Series RoHS SEMICONDUCTOR Nell Semiconductors VOLTAGE RATINGS VALUE SYMBOL PARAMETER MBR3045PT MBR3060PT VR 45 60 V RWM 45 60 V DC 45 60 Maximum DC reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage UNIT V ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Maximum average forward current per device per diode Peak repetitive forward current per leg Non-repetitive peak surge current VALUE TEST CONDITIONS UNIT 30 l F(AV) T C = 105°C, rated V R A 15 l FRM l FSM Rated V R , square wave, 20KHz, T C = 105C° 30 Following any rated load 5 μs sine or 3 μs rect.pulse condition and with rated V RRM applied A 1020 A Surge applied at rated load condition half wave single phase 60 Hz 200 Non-repetitive avalanche energy E AS T J = 25°C, l AS = 2.0A, L = 5mH Repetitive avalanche current l AR Current decaying linearly to zero in 1 μs Frequency limited by T J maximum V A = 1.5 x V R typical 10 mJ 2 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL I F = 15A I F = 30A Maximum forward voltage drop VALUE TEST CONDITIONS UNIT MBR3045PT MBR3060PT 0.65 0.72 0.8 0.90 0.57 0.65 0.7 0.78 1.0 5.0 60 100 650 450 T J = 25°C V FM (1) V I F = 15A T J = 125°C I F = 30A Maximum instantaneous reverse current l RM (1) T J = 25°C Rated DC voltage T J = 125°C Maximum junction capacitance CT V R = 5 V DC (test signal range 100 kHz to 1 MHZ) 25°C Typical series inductance LS Measured from top of terminal to mounting plane Maximum voltage rate of change dV/dt Rated V R Note (1) Pulse width < 300 µs, duty cycle < 2% www.nellsemi.com Page 2 of 5 mA pF 8 nH 10000 V/µs SEMICONDUCTOR RoHS MBR3045PT / MBR3060PT Series RoHS Nell Semiconductors THERMAL - MECHANICAL SPECIFICATIONS SYMBOL PARAMETER VALUE TEST CONDITIONS MBR3045PT UNIT MBR3060PT Maximum junction temperature range TJ -65 to 150 Maximum storage temperature range T stg -65 to 175 °C Maximum thermal resistance, junction to case R thJC DC operation R thCS Mounting surface, smooth and greased 1.4 1.4 °C/W Typical thermal resistance, case to heatsink 0.4 0.4 6.2 6.2 g 0.22 0.22 oz. minimum 6 (5) 6 (5) maximum 12 (10) 12 (10) kgf . cm (lbf . in) Approximate weight Mounting torque Ordering Information Table Device code www.nellsemi.com MBR 30 45 PT 1 2 3 4 1 - Schottky MBR series 2 - Current rating (30 = 30A, 15A x 2) 3 - Voltage ratings, 45 =45V, 60=60V 4 - Circuit configuration, Center tap common cathode, TO-247AB series package. Page 3 of 5 RoHS MBR3045PT / MBR3060PT Series RoHS SEMICONDUCTOR Nell Semiconductors RATINGS AND CHARACTERISTICS CURVES (T A = 25°C unless otherwise noted) Fig.1 Forward current derating curve Fig.2 Maximum non-repetitive peak forward surge current per diode 30 300 18 12 6 50 100 200 150 100 50 150 10 1 100 Case temperature(°C) Number of cycles at 60 Hz Fig.3 Typical instantaneous forward characteristics per diode Fig.4 Typical reverse characteristics per diode 100 T J = 150°C 10 1 T J = 25°C 0.1 MBR3045PT MBR3060PT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10 MBR3045PT MBR3060PT 1 T J = 125°C 0.1 T J = 75°C 0.01 T J = 25°C 0.001 0 1.0 20 40 60 80 100 lnstantaneous forward voltage (V) Percent of rated peak reverse voltage (%) Fig.5 Typical junction capacitance per diode Fig.6 Typical transient thermal lmpedance per diode 10000 Junction capacitance (pf) T J = T J Max. 8.3 ms Single Half Sine-wave 250 0 0 lnstantaneous reverse current (mA) 0 lnstantaneous forward current (A) Peak forward surge current (A) 24 T J = 25°C f = 1.0 MHZ V sig = 50 mVp-p 1000 MBR3045PT MBR3060PT 100 0.1 1 10 100 Transient thermal impedance (°C/W) Average forward current(A) Resistive or lnductive load Reverse voltage (V) www.nellsemi.com 100 10 1 0.1 0.01 0.1 1 10 Pulse duration, t (s) Page 4 of 5 100 SEMICONDUCTOR RoHS MBR3045PT / MBR3060PT Series RoHS Nell Semiconductors TO-247AB 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 3.55 (0.138) 3.81 (0.150) 1 4.50 (0.177)Max 2 Anode 5.38 (0.212) 6.20 (0.244) 16.15 (0.242) 3 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) (TYP.) 2.13 (0.084) 19.81 (0.780) 20.32 (0.800) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) (TYP.) 5.45 (0.215) 5.45 (0.215) 2.21 (0.087) 2.59 (0.102) CASE PIN 2 All dimensions in millimeters (inches) www.nellsemi.com Page 5 of 5 PIN 1 PIN 3