Renesas NP82N10PUF Mos field effect transistor Datasheet

Preliminary Data Sheet
NP82N10PUF
R07DS0444EJ0100
Rev.1.00
Aug 26, 2011
MOS FIELD EFFECT TRANSISTOR
Description
The NP82N10PUF is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance
⎯ RDS(on) = 15 mΩ MAX. (VGS = 10 V, ID = 41 A)
• Low Ciss: Ciss = 2900 pF TYP. (VDS = 25 V, VGS = 0 V)
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP82N10PUF-E1-AY ∗1
NP82N10PUF-E2-AY ∗1
Lead Plating
Pure Sn (Tin)
Tape 800 p/reel
Packing
Taping (E1 type)
Taping (E2 type)
Package
TO-263 (MP-25ZP)
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
R07DS0444EJ0100 Rev.1.00
Aug 26, 2011
Page 1 of 7
NP82N10PUF
Chapter Title
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗2
Single Avalanche Energy ∗2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
100
±20
±82
±164
150
1.8
175
-55 to +175
34
117
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
1.00
83.3
°C/W
°C/W
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗
2. Tch(start) = 25°C, VDD = 50 V, RG = 25 Ω, L = 100 μH, VGS = 20 V → 0 V
R07DS0444EJ0100 Rev.1.00
Aug 26, 2011
Page 2 of 7
NP82N10PUF
Chapter Title
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance ∗1
Symbol
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)1
Drain to Source On-state
Resistance ∗1
MAX.
TYP.
1.7
30
2.5
60
12
13
2900
340
140
16
16
60
8
64
12
22
0.95
62
135
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ∗1
Reverse Recovery Time
Reverse Recovery Charge
MAX.
1
±100
3.3
Unit
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
15
22
4350
510
250
35
40
120
20
96
1.5
Test Conditions
VDS = 100 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μ A
VDS = 5.0 V, ID = 41 A
VGS = 10 V, ID = 41 A
VGS = 5.8 V, ID = 18 A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 50 V, ID = 41 A,
VGS = 10 V
RG = 0Ω
VDD = 80 V,
VGS = 10 V,
ID = 82 A
IF = 82 A, VGS = 0 V
IF = 82 A, VGS = 0 V,
di/dt = 100 A/μs
Note: ∗1. Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
VGS
RL
Wave Form
RG
PG.
VDD
VGS
0
VGS
10%
90%
VDD
VDS
90%
BVDSS
IAS
90%
VDS
VGS
0
VDS
10%
0
10%
Wave Form
VDS
ID
τ
VDD
Starting Tch
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
tr
ton
td(off)
tf
toff
TEST CIRCUIT 3 GATE CHARGE
PG.
D.U.T.
IG = 2 mA
RL
50 Ω
VDD
R07DS0444EJ0100 Rev.1.00
Aug 26, 2011
Page 3 of 7
NP82N10PUF
Chapter Title
DERATING FACTOR OF FORWARD BIAS
TOTAL POWER DISSIPATION vs.
SAFE OPERATING AREA
CASE TEMPERATURE
120
160
100
140
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
Typical Characteristics (TA = 25°C)
80
60
40
20
0
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
0
TC - Case Temperature - °C
25
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID - Drain Current - A
ID(Pulse) = 164 A
100
RDS(ON) Limited
(VGS = 10 V)
1 ms
10
1
PW = 100 µs
Power Dissipation Limited
Secondary Brakedown Limited
TC = 25°C
Single Pulse
10 ms
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
1000
Rth(ch-A) = 83.3°C/W
100
10
Rth(ch-C) = 1.00°C/W
1
0.1
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0444EJ0100 Rev.1.00
Aug 26, 2011
Page 4 of 7
NP82N10PUF
Chapter Title
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
1000
180
V GS = 10 V
Tch = −55°C
−25°C
25°C
75°C
100°C
125°C
150°C
175°C
100
140
ID - Drain Current - A
ID - Drain Current - A
160
5.8 V
120
100
80
60
40
20
10
1
0.1
VDS = 10 V
Pulsed
0.01
Pulsed
0
0.001
0
1
2
3
4
5
6
7
8
0
2
4
5
6
GATE TO SOURCE THRESHOLD VOLTAGE
FORWARD TRANSFER ADMITTANCE vs. DRAIN
vs. CHANNEL TEMPERATURE
CURRENT
4
100
V DS = V GS
ID = 250 μA
3
2
1
0
-100
-50
0
50
100
150
200
75°C
25°C
−25°C
−55°C
10
Tｃｈ = 175°C
150°C
125°C
100°C
VDS = 5 V
Pulsed
1
0.1
1
Tch - Channel Temperature - °C
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
GATE TO SOURCE VOLTAGE
45
40
35
30
25
VGS = 10 V
5.8 V
20
15
10
Pulsed
5
0
0.1
1
10
100
ID - Drain Current - A
R07DS0444EJ0100 Rev.1.00
Aug 26, 2011
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
3
VGS - Gate to Source Voltage - V
| yfs | - Forward Transfer Admittance - S
VGS(th) - Gate to Source Threshold Voltage - V
VDS - Drain to Source Voltage - V
1
40
35
30
25
20
15
10
ID = 18 A
41 A
82 A
5
Pulsed
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Page 5 of 7
NP82N10PUF
Chapter Title
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
35
Ciss, Coss, Crss - Capacitance - pF
30
25
V GS = 5.8 V
ID = 18 A
20
15
V GS = 10 V
ID = 41 A
10
5
Pulsed
0
-100
-50
0
50
100
150
1000
Coss
100
Crss
10
V GS = 0 V
f = 1 MHz
1
0.01
200
0.1
Tch - Channel Temperature - °C
1000
VDS - Drain to Source Voltage - V
td(on)
tr
tf
1
0.1
1
10
100
120
td(off)
10
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V DD = 50 V
V GS = 10 V
RG = 0 Ω
100
1
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
Ciss
12
VDD = 80 V
50 V
20 V
100
10
80
8
60
6
VGS
40
20
4
2
VDS
ID =82 A
0
100
0
0
10
20
30
40
50
60
70
ID - Drain Current - A
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
100
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
VGS = 10 V
0V
10
1
Pulsed
10
di/dt = 100A/µs
V GS = 0 V
1
0.1
0
0.2
0.4
0.6
0.8
1
VF(S-D) - Source to Drain Voltage - V
R07DS0444EJ0100 Rev.1.00
Aug 26, 2011
1.2
0.1
1
10
100
IF - Drain Current - A
Page 6 of 7
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
CHANNEL TEMPERATURE
NP82N10PUF
Chapter Title
Package Drawings (Unit: mm)
10.0 ±0.3
7.88 MIN.
4.45 ±0.2
1.3 ±0.2
0.5
9.15 ±0.3
8.0 TYP.
4
15.25 ±0.5
No plating
1.35 ±0.3
TO-263 (MP-25ZP) (Mass: 1.5 g TYP.)
0.025
to 0.25
.2
0 to 8
˚
0.25
1 2
3
2.5
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2.54 ±0.25
0.6 ±0
0.75 ±0.2
Equivalent Circuit
Drain
Body
Diode
Gate
Source
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static
electricity as much as possible, and quickly dissipate it once, when it has occurred.
R07DS0444EJ0100 Rev.1.00
Aug 26, 2011
Page 7 of 7
Revision History
NP82N10PUF Data Sheet
Rev.
Date
Page
1.00
Aug 26, 2011
−
Description
Summary
First Edition Issued
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