MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) Preferred Device Complementary Silicon Plastic Power Transistors These devices are designed for use as high−frequency drivers in audio amplifiers. http://onsemi.com Features • DC Current Gain Specified to 4.0 Amperes • • • • 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS hFE = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc Collector−Emitter Sustaining Voltage − VCEO(sus) = 120 Vdc (Min); MJE15028, MJE15029 = 150 Vdc (Min); MJE15030, MJE15031 High Current Gain − Bandwidth Product fT = 30 MHz (Min) @ IC = 500 mAdc TO−220AB Compact Package Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage MJE15028, MJE15029 MJE15030, MJE15031 VCEO Collector−Base Voltage MJE15028, MJE15029 MJE15030, MJE15031 VCB Emitter−Base Voltage VEB 5.0 Vdc IC Adc ICM 8.0 16 Base Current IB 2.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25°C PD 50 0.40 W W/_C Total Device Dissipation @ TC = 25_C Derate above 25°C PD 2.0 0.016 W W/_C TJ, Tstg −65 to +150 _C Collector Current − Continuous − Peak Operating and Storage Junction Temperature Range Value TO−220AB CASE 221A−09 STYLE 1 Unit Vdc 120 150 1 2 3 Vdc 120 150 MARKING DIAGRAM MJE150xxG AY WW THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristics RqJC 2.5 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MJE150xx = Device Code x = 28, 29, 30, or 31 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 4 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MJE15028/D MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 120 150 − − − − 0.1 0.1 − − 10 10 − 10 40 40 40 20 − − − − Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) VCEO(sus) Vdc MJE15028, MJE15029 MJE15030, MJE15031 Collector Cutoff Current (VCE = 120 Vdc, IB = 0) (VCE = 150 Vdc, IB = 0) MJE15028, MJE15029 MJE15030, MJE15031 ICEO Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 150 Vdc, IE = 0) MJE15028, MJE15029 MJE15030, MJE15031 mAdc mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.1 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) (IC = 3.0 Adc, VCE = 2.0 Vdc) (IC = 4.0 Adc, VCE = 2.0 Vdc) hFE DC Current Gain Linearity (VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A) (NPN to PNP) hFE − Typ 2 3 Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − 0.5 Vdc Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) − 1.0 Vdc fT 30 − MHz DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz) PD, POWER DISSIPATION (WATTS) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT = ⎪hfe⎪• ftest. TA TC 3.0 60 2.0 40 TC 1.0 20 0 0 TA 0 20 40 60 80 100 120 T, TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 140 160 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.02 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 P(pk) ZqJC(t) = r(t) RqJC RqJC = 1.56°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) ZqJC(t) 0.05 0.07 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k IC, COLLECTOR CURRENT (AMP) Figure 2. Thermal Response 20 16 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. The data of Figures 3 and 4 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 2. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 ms 5ms dc 1.0 BONDING WIRE LIMITED THERMALLY LIMITED SECOND BREAKDOWN LIMITED @ TC = 25°C 0.1 0.02 2.0 MJE15028 MJE15029 MJE15030 MJE15031 5.0 10 50 20 120 150 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 3. Forward Bias Safe Operating Area 1000 IC, COLLECTOR CURRENT (AMP) 8.0 Cib (NPN) Cib (PNP) C, CAPACITANCE (pF) 500 5.0 IC/IB = 10 TC = 25°C 3.0 VBE(off) = 9 V 2.0 0 0 100 Cob (PNP) 50 30 5V 3V 1.0 200 Cob (NPN) 20 1.5 V 0V 100 110 120 130 140 150 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 10 1.5 3.0 5.0 7.0 10 30 50 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances Figure 4. Reverse−Bias Switching Safe Operating Area http://onsemi.com 3 100 150 fT, CURRENT GAIN−BANDWIDTH PRODUCT (MHz) MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) hfe , SMALL SIGNAL CURRENT GAIN 100 50 30 VCE = 10 V IC = 0.5 A TC = 25°C 20 PNP NPN 10 5.0 0.5 1.0 0.7 3.0 2.0 f, FREQUENCY (MHz) 5.0 7.0 10 100 90 (PNP) (NPN) 60 50 20 10 0 0.1 NPN — MJE15028 MJE15030 1K VCE = 2.0 V VCE = 2 V 500 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 500 TJ = 150°C TJ = 25°C TJ = −55°C 30 20 10 0.1 10 PNP — MJE15029 MJE15031 1K 100 70 50 5.0 Figure 7. Current Gain−Bandwidth Product Figure 6. Small−Signal Current Gain 200 150 0.5 2.0 1.0 IC, COLLECTOR CURRENT (AMP) 0.2 TJ = 150°C 200 TJ = 25°C 100 TJ = −55°C 50 20 0.2 0.5 1.0 2.0 5.0 10 0.1 10 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 5.0 10 Figure 8. DC Current Gain NPN PNP TJ = 25°C 1.8 TJ = 25°C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 2.0 V 1.4 1.0 VBE(sat) @ IC/IB = 10 0.8 VBE(on) @ VCE = 2.0 V 0.4 VCE(sat) = IC/IB = 20 0.2 0.1 VCE(sat) = IC/IB = 20 IC/IB = 10 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 0 0.1 10 Figure 9. “On” Voltage http://onsemi.com 4 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) IC/IB = 10 5.0 10 MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) 1.0 0.5 3.0 td (NPN, PNP) tr (PNP) 0.2 0.1 0.05 ts (PNP) 1.0 tf (PNP) tr (NPN) 0.02 0.01 0.1 2.0 0.5 0.03 VCC = 80 V IC/IB = 10, IB1 = IB2 ts (NPN) TJ = 25°C 5.0 t, TIME (s) μ t, TIME (s) μ 10 VCC = 80 V IC/IB = 10 TJ = 25°C 0.2 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 0.1 0.1 10 tf (NPN) 0.2 0.3 0.5 2.0 IC, COLLECTOR CURRENT (AMP) Figure 11. Turn−Off Times Figure 10. Turn−On Times ORDERING INFORMATION Device MJE15028 MJE15028G MJE15029 MJE15029G MJE15030 MJE15030G MJE15031 MJE15031G Package Shipping TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail TO−220 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail http://onsemi.com 5 5.0 10 MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP) PACKAGE DIMENSIONS TO−220AB CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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