IRF IRG4PC60FPBF Insulated gate bipolar transistor Datasheet

PD - 95566A
IRG4PC60FPbF
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency.
Industry standard TO-247AC package.
Lead-Free
VCES = 600V
VCE(on) typ. = 1.50V
G
@VGE = 15V, IC = 60A
E
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed for best performance when used with
IR Hexfred & IR Fred companion diodes.
TO-247AC
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
600
90
60
360
360
± 20
200
520
210
-55 to + 150
V
A
V
mJ
W
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.

0.24

6 (0.21)
0.24

Units
°C/W
g (oz)
1
12/04/09
IRG4PC60FPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600
Emitter-to-Collector Breakdown Voltage 16

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.13

1.5
VCE(ON)
Collector-to-Emitter Saturation Voltage

1.7

1.5
VGE(th)
Gate Threshold Voltage
3.0

∆V GE(th)/∆TJ Temperature Coeff. of Threshold Voltage

-11
gfe
Forward Transconductance
36
69

ICES
Zero Gate Voltage Collector Current

IGES
Gate-to-Emitter Leakage Current

V(BR)CES
V(BR)ECS
Max. Units
Conditions

V
VGE = 0V, IC = 250µA

V
VGE = 0V, IC = 1.0A

V/°C VGE = 0V, IC = 1.0mA
VGE = 15V
1.8
IC = 60A

IC = 90A
See Fig.2, 5
V

IC = 60A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
mV/°C VCE = VGE, IC = 250µA

S
VCE = 100V, IC = 60A
250
VGE = 0V, VCE = 600V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.

Typ.
290
40
100
42
66
310
170
0.30
4.6
4.9
39
66
470
300
8.8
13
6050
360
66
Max. Units
Conditions
340
IC = 40A
47
nC
VCC = 400V
See Fig. 8
130
VGE = 15V

TJ = 25°C
ns
360
IC = 60A, VCC = 480V
220
VGE = 15V, RG = 5.0Ω

Energy losses include "tail"

mJ
See Fig. 10, 11, 13, 14
6.3

TJ = 150°C,

IC = 60A, VCC = 480V
ns

VGE = 15V, RG = 5.0Ω

Energy losses include "tail"

mJ
See Fig. 13, 14

nH
Measured 5mm from package

VGE = 0V

pF
VCC = 30V
See Fig. 7

= 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = TBD µH,
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
RG = 5.0Ω. (See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC60FPbF
160
Triangular wave:
Square wave:
60% of rated
voltage
Load Current ( A )
120
Clamp voltage:
80% of rated
Ideal diodes
80
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 73W
40
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
1000
T J = 150°C
100
10
1
T J = 25°C
0.1
VGE = 15V
20µs PULSE WIDTH
0.01
0.0
1.0
2.0
3.0
4.0
5.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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IC, Collector-to-Emitter Current (A)
IC, Collector t-to-Emitter Current (A)
1000
100
T J = 150°C
10
1
TJ = 25°C
0.1
VCC = 10V
5µs PULSE WIDTH
0.01
4
5
6
7
8
9
10
11
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4PC60FPbF
3.0
100
Maximum DC Collector Current (A)
90
VCE , Collector-to Emitter Voltage (V)
V GE = 15V
80
70
60
50
40
30
20
10
VGE = 15V
80µs PULSE WIDTH
IC = 120A
2.0
IC = 60A
IC = 30A
1.0
0
25
50
75
100
125
150
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
T C, Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z
) thJC
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
0.001
0.00001
0.0001
0.001
0.01
1. Duty factor D =
t1 / t 2
2. Peak T J = P DM
x Z thJC
+TC
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC60FPbF
100000
VGE , Gate-to-Emitter Voltage (V)
1000
Coes
100
Cres
10
5
10
100
200
300
400
0
500
0
50
100
150
200
250
300
QG, Total Gate Charge (nC)
VCE (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
8.00
VCC = 480V
VGE = 15V
TJ = 25°C
RG = 5.0 Ω
VGE = 15V
Total Switching Losses (mJ)
Total Switching Losses (mJ)
= 40A
15
Cies
0
V CC = 400V
IC
Coes = Cce + Cgc
10000
Capacitance (pF)
20
VGE = 0V,
f = 1 MHZ
Cies = Cge + Cgc, Cce SHORTED
Cres = Cce
I C = 60A
7.00
6.00
5.00
VCC = 480V
IC = 120A
10
IC = 60A
IC = 30A
1
4.00
0
10
20
30
40
R G, Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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50
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4PC60FPbF
1000
RG = 5.0Ω
TJ = 150°C
VGE = 15V
IC, Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
30.0
VCC = 480V
20.0
10.0
0.0
100
SAFE OPERATING AREA
10
1
30
50
70
90
110
IC, Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
VGE = 20V
T J = 125°
130
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4PC60FPbF
L
D.U.T.
VC *
50V
RL =
0 - 480V
1000V
c
480V
4 X IC@ 25°C
480µF
960V
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Current Test Circuit
Load Test Circuit
IC
L
Driver*
D.U.T.
VC
Test Circuit
50V
1000V
c
Fig. 14a - Switching Loss
d
e
* Driver same type
as D.U.T., VC = 480V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
I C 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
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7
IRG4PC60FPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
(;$03/( 7+,6,6$1,5)3(
:,7+$66(0%/<
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,17+($66(0%/</,1(+
Note: "P" in assembly line
position indicates "Lead-Free"
,17(51$7,21$/
5(&7,),(5
/2*2
3$57180%(5
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$66(0%/<
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/09
8
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