GDSSF2305 D DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES Schematic diagram ● VDS = -20V,ID = -3A RDS(ON) < 114mΩ @ VGS=-2.5V RDS(ON) < 89mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 2305 SSF2305 SOT23 - ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Tape width Quantity - - Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V ID(25℃) -3 A ID(70℃) -1.8 A IDM -10 A PD 1.25 W TJ,TSTG -55 To 150 ℃ RθJA 100 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) Suzhou Goodark Electronics Co., Ltd Version 1.0 GDSSF2305 ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 V Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 V Drain-Source On-State Resistance RDS(ON) ON CHARACTERISTICS (Note 3) Forward Transconductance gFS -0.5 VGS=-4.5V, ID=-3A 62 89 VGS=-2.5V, ID=-2A 88 114 VDS=-5V,ID=-3A 7 S 1160 PF 210 PF PF mΩ DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=-10V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 125 Turn-on Delay Time td(on) 13.6 27.2 nS Turn-on Rise Time tr 8.6 17.2 nS 73.6 147.2 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) VDD=-10V,ID=-3A VGS=-4.5V,RGEN=3Ω Turn-Off Fall Time tf 34.6 69.2 nS Total Gate Charge Qg 9.6 12.7 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-10V,ID=-3A,VGS=-4.5V 1.1 nC 2.6 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1A -1.2 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. Suzhou Goodark Electronics Co., Ltd Version 1.0 V GDSSF2305 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Figure 2:Switching Waveforms PD Power(W) -ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation -ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 4 Drain Current -Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS Suzhou Goodark Electronics Co., Ltd -ID- Drain Current (A) Figure 6 Drain-Source On-Resistance Version 1.0 -ID- Drain Current (A) Normalized On-Resistance GDSSF2305 TJ-Junction Temperature(℃) Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) -Vgs Gate-Source Voltage (V) -Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds -Is- Reverse Drain Current (A) -Vgs Gate-Source Voltage (V) -Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 11 Gate Charge Suzhou Goodark Electronics Co., Ltd -Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward Version 1.0 -ID- Drain Current (A) GDSSF2305 Vds Drain-Source Voltage (V) R(t),Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance Suzhou Goodark Electronics Co., Ltd Version 1.0 GDSSF2305 SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Suzhou Goodark Electronics Co., Ltd Version 1.0