HUR2x30-40 Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes Dimensions SOT-227(ISOTOP) VRSM V 400 HUR2x30-40 Symbol Dim. VRRM V 400 Test Conditions Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 Maximum Ratings Unit IFRMS IFAVM TC=105oC; rectangular, d=0.5 100 30 A IFSM TVJ=45oC; tp=10ms (50Hz), sine tbd A tbd mJ tbd A EAS IAR o TVJ=25 C; non-repetitive; IAS=tbdA; L=tbduH VA=1.5.VR typ.; f=10kHz; repetitive -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot VISOL Weight P1 C TC=25oC 100 W 50/60Hz, RMS _ IISOL<1mA 2500 V~ 1.1-1.5/9-13 1.1-1.5/9-13 Nm/lb.in. 30 g mounting torque (M4) terminal connection torque (M4) Md o typical ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com HUR2x30-40 Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 0.25 1 mA VF IF=30A; TVJ=125oC TVJ=25oC 1.15 1.45 V RthJC RthCH 0.1 IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC trr VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C FEATURES * International standard package miniBLOC * Isolation voltage 2500 V~ * 2 independent FRED in 1 package * Glass passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * RoHS compliant P2 K/W 30 o IRM 1.15 APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ns 6.8 ADVANTAGES A * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com HUR2x30-40 Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes 70 A 60 1600 50 TVJ= 100°C VR = 200V nC IRM 1200 IF 50 Qr TVJ=150°C TVJ=100°C TVJ= 25°C 40 30 20 10 10 0.5 1.0 1.5 V 2.0 VF Fig. 1 Forward current IF versus VF 2.0 0 100 Fig. 2 Reverse recovery charge Qr versus -diF/dt 400 600 A/us 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt TVJ= 100°C IF = 30A VFR IF= 60A IF= 30A IF= 15A 70 IRM 200 V trr 80 1.0 0 15 TVJ= 100°C VR = 200V ns Kf 0 A/us 1000 -diF/dt 90 1.5 IF= 60A IF= 30A IF= 15A 20 400 0 0.0 40 30 IF= 60A IF= 30A IF= 15A 800 TVJ= 100°C VR = 200V A tfr 10 ıus tfr 0.4 VFR 5 0.5 0.6 0.2 60 Qr 0.0 0 40 80 120 °C 160 50 0 TVJ 200 400 600 800 1000 A/us 0 0 200 400 -diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF/dt 0.0 600 A/us 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: 1 K/W i 1 2 3 4 0.1 ZthJC 0.01 Rthi (K/W) ti (s) 0.436 0.482 0.117 0.115 0.0055 0.0092 0.0007 0.0418 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case P3 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com