Sirectifier HUR2X30-40 Soft recovery behaviour high-performance ultra fast recovery epitaxial diode Datasheet

HUR2x30-40
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
Dimensions SOT-227(ISOTOP)
VRSM
V
400
HUR2x30-40
Symbol
Dim.
VRRM
V
400
Test Conditions
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
37.80
30.30
38.20
1.186
1.489
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
V
W
3.30
0.780
4.57
0.830
0.130
19.81
0.180
21.08
Maximum Ratings
Unit
IFRMS
IFAVM
TC=105oC; rectangular, d=0.5
100
30
A
IFSM
TVJ=45oC; tp=10ms (50Hz), sine
tbd
A
tbd
mJ
tbd
A
EAS
IAR
o
TVJ=25 C; non-repetitive; IAS=tbdA; L=tbduH
VA=1.5.VR typ.; f=10kHz; repetitive
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
VISOL
Weight
P1
C
TC=25oC
100
W
50/60Hz, RMS
_
IISOL<1mA
2500
V~
1.1-1.5/9-13
1.1-1.5/9-13
Nm/lb.in.
30
g
mounting torque (M4)
terminal connection torque (M4)
Md
o
typical
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
HUR2x30-40
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=150oC; VR=VRRM
0.25
1
mA
VF
IF=30A; TVJ=125oC
TVJ=25oC
1.15
1.45
V
RthJC
RthCH
0.1
IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC
trr
VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C
FEATURES
* International standard package
miniBLOC
* Isolation voltage 2500 V~
* 2 independent FRED in 1
package
* Glass passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* RoHS compliant
P2
K/W
30
o
IRM
1.15
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
ns
6.8
ADVANTAGES
A
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
HUR2x30-40
Soft Recovery Behaviour High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diodes
70
A
60
1600
50
TVJ= 100°C
VR = 200V
nC
IRM
1200
IF 50
Qr
TVJ=150°C
TVJ=100°C
TVJ= 25°C
40
30
20
10
10
0.5
1.0
1.5 V 2.0
VF
Fig. 1 Forward current IF versus VF
2.0
0
100
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
400
600 A/us
800 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
TVJ= 100°C
IF = 30A
VFR
IF= 60A
IF= 30A
IF= 15A
70
IRM
200
V
trr 80
1.0
0
15
TVJ= 100°C
VR = 200V
ns
Kf
0
A/us 1000
-diF/dt
90
1.5
IF= 60A
IF= 30A
IF= 15A
20
400
0
0.0
40
30
IF= 60A
IF= 30A
IF= 15A
800
TVJ= 100°C
VR = 200V
A
tfr
10
ıus
tfr
0.4
VFR
5
0.5
0.6
0.2
60
Qr
0.0
0
40
80
120 °C 160
50
0
TVJ
200
400
600
800 1000
A/us
0
0
200
400
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
0.0
600 A/us
800 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
1
K/W
i
1
2
3
4
0.1
ZthJC
0.01
Rthi (K/W)
ti (s)
0.436
0.482
0.117
0.115
0.0055
0.0092
0.0007
0.0418
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
t
s
1
Fig. 7 Transient thermal resistance junction to case
P3
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
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