Infineon IPP200N25N3G Optimostm3 power-transistor Datasheet

IPB200N25N3 G
IPP200N25N3 G
IPI200N25N3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
VDS
250
V
RDS(on),max
20
mW
ID
64
A
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPB200N25N3 G
IPP200N25N3 G
IPI200N25N3 G
Package
PG-TO263-3
PG-TO220-3
PG-TO262-3
Marking
200N25N
200N25N
200N25N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
64
T C=100 °C
46
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
256
Avalanche energy, single pulse
E AS
I D=47 A, R GS=25 W
320
mJ
Reverse diode dv /dt
dv /dt
10
kV/µs
Gate source voltage
V GS
±20
V
Power dissipation
P tot
300
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
1)
2)
55/175/56
J-STD20 and JESD22
See figure 3
Rev. 2.4
page 1
2011-07-14
IPB200N25N3 G
IPP200N25N3 G
IPI200N25N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
0.5
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
250
-
-
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=270 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=200 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=200 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=64 A
-
17.5
20
mW
Gate resistance
RG
-
2.4
-
W
Transconductance
g fs
61
122
-
S
|V DS|>2|I D|R DS(on)max,
I D=64 A
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.4
page 2
2011-07-14
IPB200N25N3 G
IPP200N25N3 G
IPI200N25N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
5340
7100
-
297
395
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
4
-
Turn-on delay time
t d(on)
-
18
-
Rise time
tr
-
20
-
Turn-off delay time
t d(off)
-
45
-
Fall time
tf
-
12
-
Gate to source charge
Q gs
-
22
-
Gate to drain charge
Q gd
-
7
-
Switching charge
Q sw
-
13
-
Gate charge total
Qg
-
64
86
Gate plateau voltage
V plateau
-
4.2
-
Output charge
Q oss
-
135
179
nC
-
-
64
A
-
-
256
-
1
1.2
V
-
170
-
ns
-
780
-
nC
V GS=0 V, V DS=100 V,
f =1 MHz
V DD=100 V,
V GS=10 V, I D=25 A,
R G=1.6 W
pF
ns
Gate Charge Characteristics4)
V DD=100 V, I D=25 A,
V GS=0 to 10 V
V DD=100 V, V GS=0 V
nC
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
4)
T C=25 °C
V GS=0 V, I F=64 A,
T j=25 °C
V R=100 V, I F=25 A,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev. 2.4
page 3
2011-07-14
IPB200N25N3 G
IPP200N25N3 G
IPI200N25N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
320
70
280
60
240
50
40
ID [A]
Ptot [W]
200
160
30
120
20
80
10
40
0
0
0
50
100
150
200
0
50
TC [°C]
100
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
100
1 µs
10 µs
102
100 µs
ZthJC [K/W]
0.5
ID [A]
1 ms
101
10 ms
10-1
0.2
0.1
DC
0.05
100
0.02
0.01
single pulse
10-1
10-2
10-1
100
101
102
103
VDS [V]
Rev. 2.4
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2011-07-14
IPB200N25N3 G
IPP200N25N3 G
IPI200N25N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
150
30
10 V
7V
125
25
4.5 V
5V
5V
20
RDS(on) [mW]
ID [A]
100
75
4.5 V
50
7V
10 V
15
10
25
5
0
0
0
1
2
3
4
5
0
20
40
60
VDS [V]
80
100
120
140
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
140
180
160
120
140
100
120
ID [A]
gfs [S]
80
60
100
80
60
40
40
175 °C
20
20
25 °C
0
0
0
2
4
6
8
VGS [V]
Rev. 2.4
0
25
50
75
100
125
ID [A]
page 5
2011-07-14
IPB200N25N3 G
IPP200N25N3 G
IPI200N25N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=64 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
70
4
3.5
60
2700 µA
3
50
270 µA
40
30
VGS(th) [V]
RDS(on) [mW]
2.5
98%
2
1.5
typ
20
1
10
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
Ciss
103
Coss
175 °C
IF [A]
C [pF]
102
102
25°C, 98%
175°C, 98%
101
25 °C
Crss
101
100
0
40
80
120
160
VDS [V]
Rev. 2.4
0
0.5
1
1.5
2
VSD [V]
page 6
2011-07-14
IPB200N25N3 G
IPP200N25N3 G
IPI200N25N3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=25 A pulsed
parameter: T j(start)
parameter: V DD
100
10
8
200 V
25 °C
VGS [V]
IAS [A]
10
125 V
6
100 °C
125 °C
50 V
4
2
1
0
1
10
100
1000
0
20
tAV [µs]
40
60
80
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
290
V GS
Qg
280
VBR(DSS) [V]
270
260
250
V gs(th)
240
Q g(th)
230
Q sw
Q gs
220
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev. 2.4
page 7
2011-07-14
IPB200N25N3 G
IPP200N25N3 G
IPI200N25N3 G
PG-TO220-3: Outline
Rev. 2.4
page 8
2011-07-14
IPB200N25N3 G
IPP200N25N3 G
IPI200N25N3 G
PG-TO263-3: Outline
Rev. 2.4
page 9
2011-07-14
IPB200N25N3 G
IPP200N25N3 G
IPI200N25N3 G
PG-TO262-3: Outline
Rev. 2.4
page 10
2011-07-14
IPB200N25N3 G
IPP200N25N3 G
IPI200N25N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please
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on the types in question, please contact the nearest Infineon Technologies Office.
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Rev. 2.4
page 11
2011-07-14
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