MUN5211T1 Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−70/SOT−323 package which is designed for low power surface mount applications. http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTORS PIN 3 COLLECTOR (OUTPUT) Features • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC−70/SOT−323 package can be soldered using wave or reflow. The modified gull−winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Pb−Free Packages are Available PIN 1 BASE (INPUT) R1 R2 3 1 PIN 2 EMITTER (GROUND) SC−70/SOT−323 CASE 419 STYLE 3 2 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Base Voltage VCBO 50 Vdc Collector−Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current 8x M G G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Symbol Max Unit PD 202 (Note 1) 310 (Note 2) 1.6 (Note 1) 2.5 (Note 2) mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 618 (Note 1) 403 (Note 2) °C/W Thermal Resistance, Junction−to−Lead RqJL 280 (Note 1) 332 (Note 2) °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 inch Pad. 8x = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 7 1 Publication Order Number: MUN5211T1/D MUN5211T1 Series DEVICE MARKING AND RESISTOR VALUES Package Marking R1 (K) R2 (K) Shipping † MUN5211T1 SC−70/SOT−323 8A 10 10 3000 / Tape & Reel MUN5211T1G SC−70/SOT−323 (Pb−Free) 8A 10 10 3000 / Tape & Reel MUN5212T1 SC−70/SOT−323 8B 22 22 3000 / Tape & Reel MUN5212T1G SC−70/SOT−323 (Pb−Free) 8B 22 22 3000 / Tape & Reel MUN5213T1 SC−70/SOT−323 8C 47 47 3000 / Tape & Reel MUN5213T1G SC−70/SOT−323 (Pb−Free) 8C 47 47 3000 / Tape & Reel MUN5214T1 SC−70/SOT−323 8D 10 47 3000 / Tape & Reel MUN5214T1G SC−70/SOT−323 (Pb−Free) 8D 10 47 3000 / Tape & Reel MUN5215T1 (Note 3) SC−70/SOT−323 8E 10 ∞ 3000 / Tape & Reel MUN5215T1G (Note 3) SC−70/SOT−323 (Pb−Free) 8E 10 ∞ 3000 / Tape & Reel MUN5216T1 (Note 3) SC−70/SOT−323 8F 4.7 ∞ 3000 / Tape & Reel MUN5216T1G (Note 3) SC−70/SOT−323 (Pb−Free) 8F 4.7 ∞ 3000 / Tape & Reel MUN5230T1 (Note 3) SC−70/SOT−323 8G 1.0 1.0 3000 / Tape & Reel MUN5230T1G (Note 3) SC−70/SOT−323 (Pb−Free) 8G 1.0 1.0 3000 / Tape & Reel MUN5231T1 (Note 3) SC−70/SOT−323 8H 2.2 2.2 3000 / Tape & Reel MUN5231T1G (Note 3) SC−70/SOT−323 (Pb−Free) 8H 2.2 2.2 3000 / Tape & Reel MUN5232T1 (Note 3) SC−70/SOT−323 8J 4.7 4.7 3000 / Tape & Reel MUN5232T1G (Note 3) SC−70/SOT−323 (Pb−Free) 8J 4.7 4.7 3000 / Tape & Reel MUN5233T1 (Note 3) SC−70/SOT−323 8K 4.7 47 3000 / Tape & Reel MUN5233T1G (Note 3) SC−70/SOT−323 (Pb−Free) 8K 4.7 47 3000 / Tape & Reel MUN5234T1 (Note 3) SC−70/SOT−323 8L 22 47 3000 / Tape & Reel MUN5234T1G (Note 3) SC−70/SOT−323 (Pb−Free) 8L 22 47 3000 / Tape & Reel MUN5235T1 (Note 3) SC−70/SOT−323 8M 2.2 47 3000 / Tape & Reel MUN5235T1G (Note 3) SC−70/SOT−323 (Pb−Free) 8M 2.2 47 3000 / Tape & Reel MUN5236T1 (Note 3) SC−70/SOT−323 8N 100 100 3000 / Tape & Reel MUN5236T1G (Note 3) SC−70/SOT−323 (Pb−Free) 8N 100 100 3000 / Tape & Reel MUN5237T1 (Note 3) SC−70/SOT−323 8P 47 22 3000 / Tape & Reel MUN5237T1G (Note 3) SC−70/SOT−323 (Pb−Free) 8P 47 22 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN5211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 − − − − − − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Characteristic OFF CHARACTERISTICS Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5236T1 MUN5237T1 ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5236T1 MUN5237T1 Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5230T1/MUN5231T1 (IC = 10 mA, IB = 1 mA) MUN5215T1/MUN5216T1/ MUN5232T1/MUN5233T1/MUN5234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, (VCC = 5.0 V, (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) VB = 5.5 V, RL = 1.0 kW) VB = 4.0 V, RL = 1.0 kW) VOL MUN5211T1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5213T1 MUN5236T1 MUN5237T1 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 Vdc Vdc MUN5211T1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit VOH 4.9 − − Vdc 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 0.8 0.17 − 0.8 0.055 0.38 0.038 1.7 1.0 0.21 − 1.0 0.1 0.47 0.047 2.1 1.2 0.25 − 1.2 0.185 0.56 0.056 2.6 ON CHARACTERISTICS (Note 5) (Continued) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) MUN5230T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MUN5215T1 MUN5216T1 MUN5233T1 Input Resistor R1 MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5236T1 MUN5237T1 Resistor Ratio kW R1/R2 MUN5211T1/MUN5212T1/MUN5213T1/ MUN5236T1 MUN5214T1 MUN5215T1/MUN5216T1 MUN5230T1/MUN5231T1/MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5237T1 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 −50 RqJA = 403°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 4 150 MUN5211T1 Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5211T1 TA=−25°C 25°C 0.1 75°C 0 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 0.01 0.001 VCE = 10 V 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 25°C 75°C f = 1 MHz IE = 0 V TA = 25°C TA=−25°C 10 1 0.1 0.01 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob, CAPACITANCE (pF) 4 3 100 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current http://onsemi.com 5 50 10 MUN5211T1 Series 1000 1 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5212T1 IC/IB = 10 25°C TA=−25°C 0.1 75°C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 10 50 VCE = 10 V 1 10 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 2 1 75°C 25°C TA=−25°C 10 1 0.1 0.01 VO = 5 V 0 0 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 9. Output Capacitance 2 0 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 3 100 IC, COLLECTOR CURRENT (mA) 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 6 MUN5211T1 Series 10 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5213T1 1 25°C TA=−25°C 75°C 0.1 0.01 0 TA=75°C 25°C −25°C 100 10 50 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V 10 IC, COLLECTOR CURRENT (mA) 1 Figure 12. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 TA=−25°C 10 1 0.1 0.01 0.2 0 25°C 75°C 0.6 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 Figure 14. Output Capacitance VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) Figure 13. DC Current Gain f = 1 MHz IE = 0 V TA = 25°C 0.8 100 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 MUN5211T1 Series 1 300 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MUN5214T1 TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25°C 200 −25°C 150 100 50 0 80 TA=75°C VCE = 10 250 1 2 4 6 Figure 17. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25°C 3 TA=75°C IC, COLLECTOR CURRENT (mA) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 25°C −25°C 10 VO = 5 V 1 50 Figure 19. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 18. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 10 MUN5211T1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 23. Open Collector Inverter: Inverts the Input Signal Figure 24. Inexpensive, Unregulated Current Source http://onsemi.com 9 MUN5211T1 Series PACKAGE DIMENSIONS SC−70/SOT−323 CASE 419−04 ISSUE M D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 2 b e A 0.05 (0.002) c A2 MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR L A1 DIM A A1 A2 b c D E e e1 L HE SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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