ZSELEC FR3B 3.0a surface mount fast recovery diode Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
FR3A – FR3M
3.0A SURFACE MOUNT FAST RECOVERY DIODE
Features
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Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 1 0 0A Peak
SMB
B
Low Power Loss
Dim
Min
Max
Ultra-Fast Recovery Time
3.30
3.94
A
Plastic Case Material has UL Flammability
A
C
4.06
4.57
B
Classification Rating 94V-O
1.96
C
2.21
D
Mechanical Data
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J
Case: SMC/DO-214AB, Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: SMB Weight: 0.093 grams (approx.)
SMC Weight: 0.20 grams (approx.)
Lead Free: For RoHS / Lead Free Version
Maximum Ratings and Electrical Characteristics
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TL = 100°C
G
E
H
FR3A
SMC
Min
Max
5.59
6.22
6.60
7.11
2.75
3.18
D
0.15
0.31
0.15
0.31
E
5.00
5.59
7.75
8.13
G
0.10
0.20
0.10
0.20
H
0.76
1.52
0.76
1.52
J
2.00
2.62
2.00
2.62
All Dimensions in mm
@TA=25°C unless otherwise specified
FR3B
FR3D
FR3G
FR3J
FR3K
FR3M
Unit
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
VR(RMS)
35
70
140
280
420
560
800
V
IO
3.0
A
100
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
Forward Voltage
@IF = 3.0A
VFM
1.3
V
@TA = 25°C
@TA = 100°C
IRM
10
500
µA
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
trr
Typical Junction Capacitance (Note 2)
Cj
50
pF
RJL
30
°C/W
Tj, TSTG
-65 to +150
°C
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
150
250
500
nS
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
FR3A – FR3M
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Z ibo Seno Electronic Engineering Co., Ltd.
FR3A – FR3M
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
3.0
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
10
1.0
0.1
Tj = 25°C
IF Pulse Width: 300µs
0.01
175
0
Single Half-Sine-Wave
(JEDEC Method)
100
80
60
40
20
0
1
0.4
0.8
1.2
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
IR, INSTANTANEOUS REVERSE CURRENT (µA)
IFSM, PEAK FORWARD SURGE CURRENT (A)
TT, TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
1000
Tj = 125°C
100
10
Tj = 25°C
1.0
0.1
0
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Forward Surge Current Derating Curve
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 4 Typical Reverse Characteristics
trr
+0.5A
50Ω NI (Non-inductive)
10Ω NI
Device
Under
Test
(-)
0A
(+)
Pulse
Generator
(Note 2)
50V DC
Approx
(-)
1.0Ω
NI
Oscilloscope
(Note 1)
-0.25A
(+)
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 50/100 ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
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