MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54531P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54531P and M54531FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT FEATURES Á High breakdown voltage (BV CEO ≥ 40V) Á High-current driving (Ic(max) = 400mA) Á With clamping diodes Á Driving available with PMOS IC output Á Wide input voltage range (V I = –40 to +40V) Á Wide operating temperature range (Ta = –20 to +75°C) IN1→ 1 16 →O1 IN2→ 2 15 →O2 IN3→ 3 14 →O3 IN4→ 4 13 →O4 OUTPUT IN5→ 5 12 →O5 IN6→ 6 11 →O6 IN7→ 7 10 →O7 GND 9 →COM COMMON 8 16P4(P) Package type 16P2N-A(FP) CIRCUIT DIAGRAM COM APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces OUTPUT 20K INPUT 20K 2K FUNCTION The M54531P and M54531FP each have seven circuits consisting of NPN Darlington transistors. A serial circuit including a diode and resistance of 20kΩ is provided between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 400mA maximum. Collector-emitter supply voltage is 40V maximum. The M54531FP is enclosed in a molded small flat package, enabling space-saving design. ABSOLUTE MAXIMUM RATINGS Symbol VCEO IC VI IF VR Pd Topr Tstg GND The seven circuits share the COM and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω (Unless otherwise noted, Ta = –20 ~ +75 °C) Parameter Collector-emitter voltage Collector current Conditions Output, H Current per circuit output, L Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25°C, when mounted on board Ratings –0.5 ~ +40 Unit V 400 mA –40 ~ +40 400 V mA 40 1.47(P)/1.00(FP) V W –20 ~ +75 –55 ~ +125 °C °C Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54531P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE RECOMMENDED OPERATING CONDITIONS Symbol (Unless otherwise noted, Ta = –20 ~ +75°C) Limits Parameter VO Output voltage IC Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) Duty Cycle P : no more than 8% FP : no more than 6% Duty Cycle P : no more than 30% FP : no more than 25% IC ≤ 400mA “H” input voltage IC ≤ 200mA VIH VIL “L” input voltage ELECTRICAL CHARACTERISTICS typ — max 40 0 — 400 0 — 200 9 — 6 — — Unit V mA 0 35 V 1 V (Unless otherwise noted, Ta = –20 ~ +75°C) Symbol Parameter V (BR) CEO Collector-emitter breakdown voltage VCE (sat) Collector-emitter saturation voltage II Input current IIR VF IR h FE min 0 Test conditions Limits typ+ — max — — — 1.3 1.0 2.4 1.6 min 40 ICEO = 100µA VI = 9V, I C = 400mA VI = 6V, I C = 200mA VI = 18V Unit V V — 1.1 1.8 Input reverse current VI = 35V VI = –35V — — 2.0 — 3.8 –20 Clamping diode forward voltage IF = 400mA Clamping diode reverse current DC amplification factor VR = 40V VCE = 4V, IC = 300mA, Ta = 25°C — — 1.4 — 2.4 100 V µA 1000 3500 — — mA µA + : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C) Symbol ton toff Parameter Turn-on time Turn-off time Limits Test conditions min CL = 15pF (note 1) NOTE 1 TEST CIRCUIT Unit typ max — 30 — ns — 680 — ns TIMING DIAGRAM INPUT VO 50% Measured device 50% INPUT RL OPEN OUTPUT PG OUTPUT 50Ω CL 50% ton 50% toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VP = 9VP-P (2) Input-output conditions : RL = 25Ω, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54531P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 400 VI = 6V Collector current Ic (mA) Power dissipation Pd (W) 2.0 M54531P 1.5 M54531FP 1.0 0.5 300 200 100 Ta = 25°C Ta = 75°C Ta = –20°C 0 0 25 50 75 0 100 1.6 Duty-Cycle-Collector Characteristics (M54531P) 500 ➀ ➁ 300 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 0 20 40 60 80 ➂ ➃ ➄ ➅ ➆ Collector current Ic (mA) Collector current Ic (mA) 1.2 Duty-Cycle-Collector Characteristics (M54531P) 400 ➀ 300 ➁ 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 75°C 100 0 100 0 20 40 60 80 Duty cycle (%) Duty cycle (%) Duty-Cycle-Collector Characteristics (M54531FP) Duty-Cycle-Collector Characteristics (M54531FP) ➂ ➃ ➄ ➅ ➆ 100 500 ➀ 400 300 ➁ 200 •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 25°C 100 0 20 40 60 Duty cycle (%) 80 ➂ ➃ ➄ ➅ ➆ 100 Collector current Ic (mA) 500 Collector current Ic (mA) 0.8 Output saturation voltage VCE (sat) (V) 400 0 0.4 Ambient temperature Ta (°C) 500 0 0 400 300 ➀ 200 ➁ ➂ ➃ ➄ ➅ ➆ •The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. 100 0 0 20 40 60 •Ta = 75°C 80 100 Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54531P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DC Amplification Factor Collector Current Characteristics Grounded Emitter Transfer Characteristics 104 400 DC amplification factor hFE Ta = 75°C 5 3 VCE = 4V Ta = 25°C Ta = –20°C 2 103 7 5 3 Collector current Ic (mA) VCE = 4V 7 300 200 Ta = –20°C Ta = 75°C 100 Ta = 25°C 2 102 1 10 2 3 5 7 102 2 0 5 7 103 3 0 Collector current Ic (mA) 2 3 4 Input voltage VI (V) Clamping Diode Characteristics Input Characteristics 400 1.5 Ta = –20°C 1.0 Ta = 25°C Ta = 75°C 0.5 Forward bias current IF (mA) 2.0 Input current II (mA) 1 300 200 100 Ta = 25°C Ta = 75°C Ta = –20°C 0 0 5 10 15 Input voltage VI (V) 20 25 0 0 0.5 1.0 1.5 2.0 Forward bias voltage VF (V) Aug. 1999