Mitsubishi M54531P 7-unit 400ma darlington transistor array with clamp diode Datasheet

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54531P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54531P and M54531FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
PIN CONFIGURATION







INPUT 







FEATURES
Á High breakdown voltage (BV CEO ≥ 40V)
Á High-current driving (Ic(max) = 400mA)
Á With clamping diodes
Á Driving available with PMOS IC output
Á Wide input voltage range (V I = –40 to +40V)
Á Wide operating temperature range (Ta = –20 to +75°C)
IN1→ 1
16 →O1 
IN2→ 2
15 →O2 

IN3→ 3
14 →O3 
IN4→ 4
13 →O4  OUTPUT
IN5→ 5
12 →O5 
IN6→ 6
11 →O6 
IN7→ 7
10 →O7 
GND
9 →COM COMMON







8
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
COM
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
OUTPUT
20K
INPUT
20K
2K
FUNCTION
The M54531P and M54531FP each have seven circuits consisting of NPN Darlington transistors. A serial circuit including a diode and resistance of 20kΩ is provided between input transistor bases and input pins. A spike-killer clamping
diode is provided between each output pin (collector) and
COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
The M54531FP is enclosed in a molded small flat package,
enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
GND
The seven circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Parameter
Collector-emitter voltage
Collector current
Conditions
Output, H
Current per circuit output, L
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +40
Unit
V
400
mA
–40 ~ +40
400
V
mA
40
1.47(P)/1.00(FP)
V
W
–20 ~ +75
–55 ~ +125
°C
°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54531P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol
(Unless otherwise noted, Ta = –20 ~ +75°C)
Limits
Parameter
VO
Output voltage
IC
Collector current
(Current per 1 circuit when 7 circuits
are coming on simultaneously)
Duty Cycle
P : no more than 8%
FP : no more than 6%
Duty Cycle
P : no more than 30%
FP : no more than 25%
IC ≤ 400mA
“H” input voltage
IC ≤ 200mA
VIH
VIL
“L” input voltage
ELECTRICAL CHARACTERISTICS
typ
—
max
40
0
—
400
0
—
200
9
—
6
—
—
Unit
V
mA
0
35
V
1
V
(Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
V (BR) CEO
Collector-emitter breakdown voltage
VCE (sat)
Collector-emitter saturation voltage
II
Input current
IIR
VF
IR
h FE
min
0
Test conditions
Limits
typ+
—
max
—
—
—
1.3
1.0
2.4
1.6
min
40
ICEO = 100µA
VI = 9V, I C = 400mA
VI = 6V, I C = 200mA
VI = 18V
Unit
V
V
—
1.1
1.8
Input reverse current
VI = 35V
VI = –35V
—
—
2.0
—
3.8
–20
Clamping diode forward voltage
IF = 400mA
Clamping diode reverse current
DC amplification factor
VR = 40V
VCE = 4V, IC = 300mA, Ta = 25°C
—
—
1.4
—
2.4
100
V
µA
1000
3500
—
—
mA
µA
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
ton
toff
Parameter
Turn-on time
Turn-off time
Limits
Test conditions
min
CL = 15pF (note 1)
NOTE 1 TEST CIRCUIT
Unit
typ
max
—
30
—
ns
—
680
—
ns
TIMING DIAGRAM
INPUT
VO
50%
Measured device
50%
INPUT
RL
OPEN
OUTPUT
PG
OUTPUT
50Ω
CL
50%
ton
50%
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VP = 9VP-P
(2) Input-output conditions : RL = 25Ω, VO = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54531P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
Thermal Derating Factor Characteristics
400
VI = 6V
Collector current Ic (mA)
Power dissipation Pd (W)
2.0
M54531P
1.5
M54531FP
1.0
0.5
300
200
100
Ta = 25°C
Ta = 75°C
Ta = –20°C
0
0
25
50
75
0
100
1.6
Duty-Cycle-Collector Characteristics
(M54531P)
500
➀
➁
300
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
100
0
20
40
60
80
➂
➃
➄
➅
➆
Collector current Ic (mA)
Collector current Ic (mA)
1.2
Duty-Cycle-Collector Characteristics
(M54531P)
400
➀
300
➁
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
100
0
100
0
20
40
60
80
Duty cycle (%)
Duty cycle (%)
Duty-Cycle-Collector Characteristics
(M54531FP)
Duty-Cycle-Collector Characteristics
(M54531FP)
➂
➃
➄
➅
➆
100
500
➀
400
300
➁
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
100
0
20
40
60
Duty cycle (%)
80
➂
➃
➄
➅
➆
100
Collector current Ic (mA)
500
Collector current Ic (mA)
0.8
Output saturation voltage VCE (sat) (V)
400
0
0.4
Ambient temperature Ta (°C)
500
0
0
400
300
➀
200
➁
➂
➃
➄
➅
➆
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
100
0
0
20
40
60
•Ta = 75°C
80
100
Duty cycle (%)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54531P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DC Amplification Factor
Collector Current Characteristics
Grounded Emitter Transfer Characteristics
104
400
DC amplification factor hFE
Ta = 75°C
5
3
VCE = 4V
Ta = 25°C
Ta = –20°C
2
103
7
5
3
Collector current Ic (mA)
VCE = 4V
7
300
200
Ta = –20°C
Ta = 75°C
100
Ta = 25°C
2
102 1
10
2
3
5 7 102
2
0
5 7 103
3
0
Collector current Ic (mA)
2
3
4
Input voltage VI (V)
Clamping Diode Characteristics
Input Characteristics
400
1.5
Ta = –20°C
1.0
Ta = 25°C
Ta = 75°C
0.5
Forward bias current IF (mA)
2.0
Input current II (mA)
1
300
200
100
Ta = 25°C
Ta = 75°C
Ta = –20°C
0
0
5
10
15
Input voltage VI (V)
20
25
0
0
0.5
1.0
1.5
2.0
Forward bias voltage VF (V)
Aug. 1999
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