Spec. No. : C602M3 Issued Date : 2017.11.06 Revised Date : Page No. : 1/7 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1616AN3 BVCEO IC 60V 3A Features • High breakdown voltage, BVCEO≥ 60V • Large continuous collector current capability • Low collector saturation voltage • Pb-free lead plating and halogen-free package Symbol Outline BTD1616AN3 SOT-23 C E B：Base C：Collector E：Emitter B Ordering Information Device BTD1616AN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 :3000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name BTD1616AN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C602M3 Issued Date : 2017.11.06 Revised Date : Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current Symbol VCBO VCEO VEBO IC ICP IB Power Dissipation PD RθJA Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Range Tj ; Tstg Limits 120 60 7 3 5 0.5 310 (Note 1) 500 (Note 2) 403 (Note 1) 250 (Note 2) -55~+150 Unit V V V A A A mW mW °C/W °C/W °C Note: 1.Device mounted on FR-4 PCB with minimum pad 2.Device mounted on FR-4 PCB with area of 4.5”×5”, mounting pad 0.02 in² of 2 oz copper Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VCE(sat) *VCE(sat) *VBE(sat) *VBE(sat) *VBE(on) *hFE 1 *hFE 2 *hFE 3 *hFE 4 fT Cob ton tstg tf Min. 120 60 7 150 180 100 50 100 - Typ. 98 131 90 150 11 40 500 120 Max. 100 100 150 200 250 300 1 1.2 1 390 18 - Unit V V V nA nA mV mV mV mV V V V MHz pF ns Test Conditions IC=100μA IC=1mA IE=50μA VCB=120V VEB=7V IC=1A, IB=50mA IC=1A, IB=20mA IC=1A, IB=100mA IC=2A, IB=200mA IC=1A, IB=50mA IC=1A, IB=100mA VCE=2V, IC=1A VCE=2V, IC=100mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=2V, IC=2A VCE=2V, IC=100mA, f=100MHz VCB=10V, IE=0A,f=1MHz VCC=30V, IC=1A, IB1=-IB2=33mA, RL=30Ω *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% BTD1616AN3 CYStek Product Specification Spec. No. : C602M3 Issued Date : 2017.11.06 Revised Date : Page No. : 3/7 CYStech Electronics Corp. Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 2000 700 Collector Current---IC(mA) 1600 IB=6mA 1400 1200 IB=4mA 1000 800 600 IB=2mA 400 IB=2.5mA 600 Collector Current---IC(A) IB=10mA IB=8mA 1800 IB=2mA 500 400 IB=1.5mA 300 IB=1mA 200 IB=500uA 100 200 IB=0 IB=0 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 Emitter Grounded Output Characteristics 1000 IB=500uA VCE=5V IB=400uA 100 80 IB=300uA 60 IB=200uA Current Gain---HFE Collector Current---IC(mA) 6 Current Gain vs Collector Current 140 120 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 40 VCE=2V 100 VCE=1V IB=100uA 20 IB=0 0 10 0 1 2 3 4 5 6 1 Collector-to-Emitter Voltage---VCE(V) 10000 Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 1000 VCE(SAT) Saturation Voltage---(mV) Saturation Voltage---(mV) 10 100 1000 Collector Current---IC(mA) 1000 IC=100IB IC=50IB 100 VBE(SAT)@IC=50IB IC=20IB 10 100 1 BTD1616AN3 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C602M3 Issued Date : 2017.11.06 Revised Date : Page No. : 4/7 Typical Characteristic Curves(Cont.) Power Derating Curves On Voltage vs Collector Current 1000 On Voltage---(mV) Power Dissipation---PD(mW) 500 VCE=2V See Note 2 on page 1 400 See Note 1 on page 1 300 200 100 0 100 1 10 100 1000 Collector Current---IC(mA) 0 10000 Cutoff Frequency vs Collector Current 50 100 150 Ambient Temperature---TA(℃) 200 Capacitance Characteristics 1000 1000 Capacitance---(pF) Cutoff Frequency---FT(MHZ) f=1MHz FT@VCE=5V 100 Cib 100 10 Cob 1 10 1 10 100 Collector Current --- IC(mA) 1000 0.1 1 10 Reverse-biased Voltage---(V) 100 Recommended soldering footprint BTD1616AN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C602M3 Issued Date : 2017.11.06 Revised Date : Page No. : 5/7 Reel Dimension Carrier Tape Dimension BTD1616AN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C602M3 Issued Date : 2017.11.06 Revised Date : Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD1616AN3 CYStek Product Specification Spec. No. : C602M3 Issued Date : 2017.11.06 Revised Date : Page No. : 7/7 CYStech Electronics Corp. SOT-23 Dimension Marking: Product Code DG Date Code: Year+Month Year: 5→2015, 6→2016 ‧‧‧, etc. Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0453 0.0118 0.0197 0.0669 0.0787 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.15 0.30 0.50 1.70 2.00 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0197 0.0283 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0236 Millimeters Min. Max. 0.08 0.20 0.50 0.72 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.60 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1616AN3 CYStek Product Specification