IDT IDT71V124SA12TY 3.3v cmos static ram 1 meg (128k x 8-bit) center power & ground pinout Datasheet

3.3V CMOS Static RAM
1 Meg (128K x 8-Bit)
Center Power &
Ground Pinout
Features
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IDT71V124SA
Description
128K x 8 advanced high-speed CMOS static RAM
JEDEC revolutionary pinout (center power/GND) for
reduced noise
Equal access and cycle times
– Commercial: 10/12/15/20ns
– Industrial: 12/15/20ns
One Chip Select plus one Output Enable pin
Inputs and outputs are LVTTL-compatible
Single 3.3V supply
Low power consumption via chip deselect
Available in a 32-pin 300- and 400-mil Plastic SOJ, and
32-pin Type II TSOP packages.
The IDT71V124 is a 1,048,576-bit high-speed static RAM organized
as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability
CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for highspeed memory needs. The JEDEC center power/GND pinout reduces
noise generation and improves system performance.
The IDT71V124 has an output enable pin which operates as fast as
5ns, with address access times as fast as 9ns available. All bidirectional inputs and outputs of the IDT71V124 are LVTTL-compatible and
operation is from a single 3.3V supply. Fully static asynchronous
circuitry is used; no clocks or refreshes are required for operation.
Functional Block Diagram
A0
•
•
•
ADDRESS
•
•
•
1,048,576-BIT
MEMORY ARRAY
DECODER
A16
8
8
I/O0 - I/O7
I/O CONTROL
.
8
WE
OE
CS
CONTROL
LOGIC
3873 drw 01
AUGUST 2000
1
©2000- Integrated Device Technology, Inc.
DSC-3873/05
IDT71V124SA, 3.3V CMOS Static RAM
1 Meg (128K x 8-Bit) Center Power & Ground Pinout
Commercial and Industrial Temperature Ranges
Pin Configuration
Absolute Maximum Ratings(1)
Symbol
A0
A1
A2
A3
CS
I/O0
I/O1
VDD
GND
I/O2
I/O3
WE
A4
A5
A6
A7
A16
A15
A14
A13
OE
I/O7
I/O6
GND
VDD
I/O5
I/O4
A12
A11
A10
A9
A8
1
32
2
31
3
30
4
29
5
28
6 SO32-2 27
7 SO32-3 26
8 SO32-4 25
9
24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
Rating
Value
Unit
VDD
Supply Voltage Relative
to GND
-0.5 to +4.6
V
VIN, VOUT
Terminal Voltage Relative
to GND
-0.5 to VDD+0.5
V
Commercial
Operating Temperature
-0 to +70
o
C
-55 to +125
o
C
-55 to +125
o
C
TA
.
TBIAS
TSTG
Industrial
Operating Temperature
-40 to +85
Temperature Under Bias
Storage Temperature
PT
Power Dissipation
1.25
W
IOUT
DC Output Current
50
mA
3873 drw 02
3873 tbl 02
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliabilty.
SOJ and TSOP
Top View
Truth Table(1)
CS
OE
WE
I/O
L
L
H
DATAOUT
Read Data
L
X
L
DATAIN
Write Data
L
H
H
High-Z
Output Disabled
H
X
X
High-Z
Deselected – Standby
Recommended Operating Temperature and Supply Voltage
Function
Grade
Temperature
GND
VDD
Commercial
0°C to +70°C
0V
See Below
Industrial
-40°C to +85°C
0V
See Below
3873 tb l 02a
3873 tbl 01
NOTE:
1. H = VIH, L = VIL, X = Don't care.
Recommended DC Operating
Conditions
Symbol
Capacitance
(TA = +25°C, f = 1.0MHz, SOJ package)
Symbol
CIN
CI/O
Parameter(1)
Input Capacitance
I/O Capacitance
3.6
V
Supply Voltage
3.0
3.3
3.6
V
0
0
0
VIN = 3dV
6
pF
VSS
3873 tbl 03
Unit
3.3
VDD(2)
NOTE:
1. This parameter is guaranteed by device characterization, but is not production tested.
Max.
3.15
Unit
pF
Typ.
Supply Voltage
Max.
7
Min.
VDD(1)
Conditions
VOUT = 3dV
Parameter
Ground
VIH
Input High Voltage
2.0
____
VIL
Input Low Voltage
–0.5(1)
____
VDD+0.3
0.8
NOTES:
1. For 71V124SA10 only.
2. For all speed grades except 71V124SA10.
3. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.
4. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.
DC Electrical Characteristics
V
(3)
V
V
3873 tbl 04
(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
5
µA
|ILI|
Input Leakage Current
VDD = Max., VIN = GND to VDD
___
|ILO|
Output Leakage Current
VDD = Max.,CS = VIH, VOUT = GND to VDD
___
5
µA
VOL
Output Low Voltage
IOL = 8mA, V DD = Min.
___
0.4
V
2.4
___
V
VOH
Output High Voltage
IOH = –4mA, V DD = Min.
3873 tbl 05
2
IDT71V124SA, 3.3V CMOS Static RAM
1 Meg (128K x 8-Bit) Center Power & Ground Pinout
Commercial and Industrial Temperature Ranges
DC Electrical Characteristics(1, 2)
(VDD = Min. to Max., V LC = 0.2V, VHC = VDD – 0.2V)
71V124SA10
Symbol
Parameter
71V124SA12
71V124SA15
71V124SA20
Com'l Only
Com'l
Ind
Com'l
Ind
Com'l
Ind
Unit
ICC
Dynamic Operating Current
CS < VLC, Outputs Open, VDD = Max., f = fMAX(3)
145
130
140
100
120
95
115
mA
ISB
Dynamic Standby Power Supply Current
CS > VHC, Outputs Open, VDD = Max., f = fMAX(3)
45
40
40
35
40
30
35
mA
ISB1
Full Standby Power Supply Current (static)
CS > VHC, Outputs Open, VDD = Max., f = 0(3)
10
10
10
10
10
10
10
mA
3873 tbl 06
NOTES:
1. All values are maximum guaranteed values.
2. All inputs switch between 0.2V (Low) and VDD–0.2V (High).
3. fMAX = 1/t RC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing.
AC Test Conditions
GND to 3.0V
Input Pulse Levels
Input Rise/Fall Times
3ns
Input Timing Reference Levels
1.5V
1.5V
Output Reference Levels
See Figure 1 and 2
AC Test Load
3873 tbl 07
3.3V
320Ω
+1.5V
DATAOUT
50Ω
I/O
5pF*
Z0 = 50Ω
350Ω
30pF
3873 drw 03
.
3873 drw 04
Figure 1. AC Test Load
*Including jig and scope capacitance.
Figure 2. AC Test Load
(for t CLZ, t OLZ, tCHZ, tOHZ , tOW, and tWHZ)
3
6.42
IDT71V124SA, 3.3V CMOS Static RAM
1 Meg (128K x 8-Bit) Center Power & Ground Pinout
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)
71V124SA10(1)
71V124SA12
71V124SA15
71V124SA20
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Read Cycle Time
10
____
12
____
15
____
20
____
ns
tAA
Address Access Time
____
10
____
12
____
15
____
20
ns
tACS
Chip Select Access Time
____
10
____
12
____
15
____
20
ns
tCLZ(2)
Chip Select to Output in Low-Z
4
____
4
____
4
____
4
____
ns
0
Symbol
Parameter
READ CYCLE
tRC
(2)
tCHZ
tOE
Chip Deselect to Output in High-Z
Output Enable to Output Valid
(2)
5
0
6
0
7
0
8
ns
____
5
____
6
____
7
____
8
ns
0
____
0
____
0
____
ns
tOLZ
Output Enable to Output in Low-Z
0
____
tOHZ(2)
Output Disable to Output in High-Z
0
5
0
5
0
5
0
7
ns
tOH
Output Hold from Address Change
4
____
4
____
4
____
4
____
ns
10
____
12
____
15
____
20
____
ns
8
____
10
____
12
____
ns
WRITE CYCLE
tWC
Write Cycle Time
tAW
Address Valid to End-of-Write
7
____
tCW
Chip Select to End-of-Write
7
____
8
____
10
____
12
____
ns
tAS
Address Set-up Time
0
____
0
____
0
____
0
____
ns
7
____
8
____
10
____
12
____
ns
0
____
0
____
0
____
0
____
ns
6
____
7
____
9
____
ns
tWP
Write Pulse Width
tWR
Write Recovery Time
tDW
Data Valid to End-of-Write
5
____
tDH
Data Hold Time
0
____
0
____
0
____
0
____
ns
tOW(2)
Output Active from End-of-Write
3
____
3
____
3
____
4
____
ns
Write Enable to Output in High-Z
0
5
0
5
0
5
0
8
ns
(2)
tWHZ
NOTES:
1. 0°C to +70°C temperature range only.
2. This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested.
4
3873 tbl 08
IDT71V124SA, 3.3V CMOS Static RAM
1 Meg (128K x 8-Bit) Center Power & Ground Pinout
Commercial and Industrial Temperature Ranges
Timing Waveform of Read Cycle No. 1(1)
tRC
ADDRESS
tAA
OE
tOE
tOLZ (5)
CS
tACS(3)
tCLZ
tOHZ (5)
(5)
tCHZ (5)
HIGH IMPEDANCE
DATAOUT
.
DATAOUT VALID
3873 drw 05
Timing Waveform of Read Cycle No. 2(1, 2, 4)
tRC
ADDRESS
tAA
tOH
DATAOUT
tOH
PREVIOUS DATAOUT VALID
DATAOUT VALID
3873 drw 06
NOTES:
1. WE is HIGH for Read Cycle.
2. Device is continuously selected, CS is LOW.
3. Address must be valid prior to or coincident with the later of CS transition LOW; otherwise tAA is the limiting parameter.
4. OE is LOW.
5. Transition is measured ±200mV from steady state.
5
6.42
.
IDT71V124SA, 3.3V CMOS Static RAM
1 Meg (128K x 8-Bit) Center Power & Ground Pinout
Commercial and Industrial Temperature Ranges
Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,4)
tWC
ADDRESS
tAW
CS
tWP (2)
tAS
tWR
WE
tCHZ (5)
tOW (5)
tWHZ (5)
HIGH IMPEDANCE
(3)
DATAOUT
(3)
tDW
DATAIN
tDH
.
DATAIN VALID
3873 drw 07
Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1, 4)
tWC
ADDRESS
tAW
CS
tAS
(3)
tWR
tCW
WE
tDW
DATAIN
tDH
DATAIN VALID
3873 drw 08
.
NOTES:
1. A write occurs during the overlap of a LOW CS and a LOW WE.
2. OE is continuously HIGH. During a WE controlled write cycle with OE LOW, tWP must be greater than or equal to tWHZ + tDW to allow the I/O drivers to turn off and data to be
placed on the bus for the required tDW . If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is the specified t WP.
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high impedance state. CS must be active during the tCW write period.
5. Transition is measured ±200mV from steady state.
6
IDT71V124SA, 3.3V CMOS Static RAM
1 Meg (128K x 8-Bit) Center Power & Ground Pinout
Commercial and Industrial Temperature Ranges
Ordering Information
IDT 71V124
Device
Type
SA
XX
X
X
Power
Speed
Package
Process/
Temperature
Range
Blank
I
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
TY
Y
PH
300-mil SOJ (SO32-2)
400-mil SOJ (SO32-3)
TSOP Type II (SO32-4)
10*
12
15
20
Speed in nanoseconds
.
3873 drw 09
* Commercial temperature range only.
** 400-mil SOJ (SO32-3) package only offered in
10ns and 12ns speed grades
7
6.42
IDT71V124SA, 3.3V CMOS Static RAM
1 Meg (128K x 8-Bit), Center Power & Ground Pinout
Commercial and Industrial Temperature Ranges
Datasheet Document History
11/22/99
08/30/00
Pg. 1–4, 7
Pg. 2
Pg. 6
Pg. 8
Pg. 3
Pg. 4
Updated to new format
Added Industrial Temperature range offerings
Added Recommended Operating Temperature and Supply Voltage table
Revised footnotes on Write Cycle No. 1 diagram
Added Datasheet Document History
Tighten ICC and ISB
Tighten AC Characteristics tOHZ, tOW and tWHZ
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8
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