AT-42000 Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Data Sheet Description Features Avago’s AT-42000 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. • High Output Power: This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50W up to 1 GHz , makes this device easy to use as a low noise amplifier. The AT-42000 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz • High Gain-Bandwidth Product: 9.0 GHz Typical fT Chip Outline The recommended assembly procedure is gold-eutectic die attach at 400oC and either wedge or ball bonding using 0.7 mil gold wire. See APPLICATIONS section, “Chip Use”. CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by ESD. AT-42000 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Absolute Maximum [1] 1.5 20 12 80 600 200 -65 to 200 Units V V V mA mW °C °C Part Number Ordering Information Part Number Devices Per Tray AT-42000-GP4 100 Thermal Resistanc e [2,4] : θ jc = 70°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface = 25°C. 3. Derate at 14.3 mW/°C for TMounting Surface > 158°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section ÒThermal ResistanceÓ for more information. Electrical Specifications, T A = 25 °C Symbol Parameters and Test Conditions [1] Units Typ. Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz f = 4.0 GHz dB 11.5 5.5 P1 dB f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz dBm G1 dB Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain; V CE = 8 V, IC = 35 mA 21.0 20.5 15.0 10.0 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA dB GA Gain @ NFO; V CE = 8 V, IC = 10 mA f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz fT Gain Bandwidth Product: VCE = 8 V, IC = 35 mA hFE I CBO I EBO CCB Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; V CB = 8 V Emitter Cutoff Current; V EB = 1 V Collector Base Capacitance[2] : VCB = 8 V, f = 1 MHz Notes: 1. RF performance is determined by packaging and testing 10 devices per wafer. 2. For this test, the emitter is grounded. Min. |S21E| 2 dB 1.9 3.0 14.0 10.5 dB GHz Ñ mA mA pF Max. 9.0 30 150 0.23 270 0.2 2.0 AT-42000 Typical Performance, T A = 25 °C 24 4.0 GHz P1dB 16 1.0 GHz 6V 16 4V P1dB 12 16 2.0 GHz 16 G1dB 4 0 10 4.0 GHz 20 30 40 14 G1dB 12 10 50 0 10 IC (mA) 12 40 0 50 10 V 11 6V 10 4V 9 8 35 21 18 MSG 25 20 MAG 15 |S21E|2 20 30 10 20 40 IC (mA) Figure 4. Insertion Power Gain vs. Collector Current and Voltage. f = 2.0 GHz. 50 0 30 40 GA 15 12 4 9 3 NFO 3 0.1 0.3 0.5 50 6 5 10 0 Figure 3. Insertion Power Gain vs. Collector Current and Frequency. V CE = 8 V. 24 10 0 4.0 GHz IC (mA) 40 30 GAIN (dB) |S21E|2 GAIN (dB) 30 4 Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. 13 20 8 IC (mA) Figure 1. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. V CE = 8 V. 7 10 V 6V 4V GAIN (dB) 8 G1 dB (dB) G1 dB (dB) 12 2.0 GHz 12 1.0 FREQUENCY (GHz) Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. V CE = 8 V, I C = 35 mA. 3.0 6.0 0 0.5 1.0 2.0 2 1 0 3.0 4.0 5.0 FREQUENCY (GHz) Figure 6. Noise Figure and Associated Gain vs. Frequency. V CE = 8 V, I C = 10 mA. NFO (dB) 20 20 10 V 20 |S21E|2 GAIN (dB) 2.0 GHz P1 dB (dBm) P1 dB (dBm) 24 AT-42000 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, I C = 10 mA Freq. S 11 S 21 GHz Mag. Ang. dB Mag. Ang. 0.1 .70 -50 28.0 25.19 155 0.5 .67 -136 20.9 11.04 108 1.0 .66 -166 15.7 6.08 90 1.5 .66 -173 12.1 4.02 86 2.0 .66 179 9.8 3.09 82 2.5 .67 170 7.8 2.46 74 3.0 .67 165 6.3 2.08 68 3.5 .70 157 5.1 1.80 61 4.0 .70 151 3.9 1.56 57 4.5 .71 145 2.9 1.40 51 5.0 .73 138 1.9 1.24 41 5.5 .74 132 1.2 1.15 36 6.0 .76 129 0.2 1.02 32 dB -37.7 -30.5 -28.9 -28.2 -27.5 -26.0 -24.7 -23.4 -21.8 -20.7 -19.3 -17.2 -16.3 S 12 Mag. .013 .030 .036 .039 .042 .050 .058 .068 .081 .092 .109 .138 .154 Ang. 71 43 47 52 57 66 72 77 82 86 87 88 87 Mag. .92 .57 .50 .48 .47 .47 .47 .47 .48 .50 .51 .51 .53 dB -40.9 -34.4 -30.5 -27.7 -25.4 -23.6 -22.1 -20.6 -19.7 -18.3 -17.5 -16.5 -15.7 S 12 Mag. .009 .019 .030 .041 .054 .066 .079 .093 .104 .121 .133 .149 .164 Ang. 65 58 70 76 79 82 82 84 86 86 85 86 85 Mag. .79 .42 .38 .38 .38 .38 .38 .39 .40 .41 .42 .41 .44 S 22 Ang. -14 -27 -24 -23 -23 -23 -26 -28 -30 -34 -38 -50 -56 AT-42000 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, I C = 35 mA Freq. S 11 S 21 GHz Mag. Ang. dB Mag. Ang. 0.1 .49 -96 33.0 44.61 143 0.5 .62 -163 22.8 13.87 98 1.0 .63 179 17.2 7.25 86 1.5 .63 171 13.5 4.74 78 2.0 .65 163 11.2 3.62 72 2.5 .65 159 9.3 2.90 67 3.0 .68 154 7.8 2.44 60 3.5 .67 148 6.5 2.12 57 4.0 .69 144 5.3 1.83 51 4.5 .70 139 4.4 1.65 47 5.0 .70 137 3.3 1.46 43 5.5 .72 131 2.7 1.36 38 6.0 .74 128 1.7 1.22 34 A model for this device is available in the DEVICE MODELS section. AT-42000 Noise Parameters: Freq. GHz NF O dB 0.1 0.5 1.0 2.0 4.0 1.0 1.1 1.5 1.9 3.0 VCE = 8 V, IC = 10 mA Mag .04 .05 .09 .23 .47 Gopt Ang 13 69 127 171 -154 R N /50 0.13 0.13 0.12 0.11 0.14 S 22 Ang. -24 -26 -22 -23 -25 -27 -29 -32 -34 -40 -44 -48 -55 AT-42000 Chip Dimensions 30 µ m 1.18 mil DIA Base Pad 90 µ m 3.54 mil 305 µ m 12 mil Emitter Pad 305 µ m 12 mil Note: Die thickness is 5 to 6 mil. For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2008 Avago Technologies Limited. All rights reserved. Obsoletes 5965-8909E AV02-1002EN - January 16, 2008