NTSAF545 Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance High Surge Capability These are Pb−Free and Halide−Free Devices www.onsemi.com TRENCH SCHOTTKY RECTIFIER 5.0 AMPERE 45 VOLTS Typical Applications • Switching Power Supplies including Tablet Adapters, and Flat Panel • • • • Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation SMA−FL CASE 403AA STYLE 6 MARKING DIAGRAM Mechanical Characteristics: • • • • • • • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements Weight: 95 mg (Approximately) Cathode Polarity Band AYWW 5ARG G 5AR = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NTSAF545T3G Package Shipping† SMA−FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 1 1 Publication Order Number: NTSAF545/D NTSAF545 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 90°C) Symbol Value Unit VRRM VRWM VR 45 V IO A 5.0 Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TL = 72°C IFRM 10 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature (Note 1) TJ −65 to +150 °C A 100 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 25 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 90 °C/W Typ Max Unit 0.485 0.41 0.6 0.55 3.5 2.5 9.5 9 2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Rating Symbol Instantaneous Forward Voltage (Note 3) (IF = 5 A, TJ = 25°C) (IF = 5 A, TJ = 125°C) VF Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR V mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NTSAF545 TYPICAL CHARACTERISTICS 10 iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 150°C TA = 125°C 1 TA = 25°C TA = −55°C 0.1 IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 0.3 0.2 0.4 0.5 TA = 125°C 1 TA = 25°C TA = −55°C 0.1 0.7 0.6 0.1 0.2 0.4 0.3 0.5 0.7 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E−01 1.E+00 1.E−02 1.E−01 TA = 150°C TA = 150°C 1.E−02 1.E−03 TA = 125°C TA = 125°C 1.E−03 1.E−04 1.E−04 1.E−05 1.E−05 TA = 25°C 1.E−06 TA = 25°C 1.E−06 1.E−07 1.E−07 10 15 20 25 35 30 40 45 10 15 20 25 30 35 40 45 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics TJ = 25°C 100 10 0.1 5 VR, INSTANTANEOUS REVERSE VOLTAGE (V) IF(AV), AVERAGE FORWARD CURRENT (A) 5 1000 C, JUNCTION CAPACITANCE (pF) TA = 150°C 10 IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 1 10 12 11 10 9 8 7 DC Square Wave 6 5 4 3 2 1 0 RqJC = 26.9°C/W 0 20 40 60 80 100 120 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating per Device www.onsemi.com 3 140 NTSAF545 TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 10 IPK/IAV = 20 IPK/IAV = 10 8 6 IPK/IAV = 5 4 Square Wave 2 DC 0 0 1 3 2 4 IF(AV), AVERAGE FORWARD CURRENT (A) R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) Figure 7. Forward Power Dissipation 100 50% Duty Cycle 20% 10 10% 5% 1 2% 1% Assumes 25°C ambient and soldered to a 600 mm2 − oz copper pad on PCB 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 100 1000 t, PULSE TIME (S) R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) Figure 8. Typical Thermal Characteristics 10 1 50% Duty Cycle 20% 0.1 10% 5% 2% 1% 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (S) Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case www.onsemi.com 4 NTSAF545 PACKAGE DIMENSIONS SMA−FL CASE 403AA ISSUE O E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. DIM A b c D E E1 L D TOP VIEW A MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 RECOMMENDED SOLDER FOOTPRINT* c C SIDE VIEW SEATING PLANE 5.56 1.76 2X b 1.30 2X L BOTTOM VIEW DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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