CYStech Electronics Corp. Spec. No. : C976J3 Issued Date : 2014.09.15 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTA55N20J3 BVDSS 200V ID@VGS=10V VGS=10V, ID=11A 25A 52mΩ VGS=4.5V, ID=5A 52mΩ RDSON(TYP) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package Equivalent Circuit Outline TO-252(DPAK) MTA55N20J3 G：Gate S：Source G D：Drain D S Ordering Information Device MTA55N20J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTA55N20J3 CYStek Product Specification Spec. No. : C976J3 Issued Date : 2014.09.15 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=1.6mH, ID=20A, RG=25Ω Repetitive Avalanche Energy@ L=0.1mH (Note 2) Total Power Dissipation @TC=25℃ Total Power Dissipation @TA=25℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol Limits VDS VGS ID ID IDM IAS EAS EAR 200 ±20 25 17.7 60 20 320 4.6 107 1.14 -55~+175 Pd Tj, Tstg Unit V A mJ W °C *2. Duty cycle ≤ 1% Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 1.4 110 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) *1 GFS *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 MTA55N20J3 Min. Typ. Max. Unit Test Conditions 200 0.5 - 0.8 52 52 40 1.5 ±100 1 25 62 70 - V V nA S VGS=0V, ID=250μA VDS =VGS, ID=250μA VGS=±20V, VDS=0V VDS =200V, VGS =0V VDS =160V, VGS =0V, TJ=125°C VGS =10V, ID=11A VGS =4.5V, ID=5A VDS =15V, ID=11A - 100 8.6 18.4 16.8 51 528 309 - nC VDS=160V, ID=20A, VGS=10V ns VDS=100V, ID=20A, VGS=10V, RG=25Ω μA mΩ CYStek Product Specification CYStech Electronics Corp. Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 4260 207 172 1.2 - - 0.82 93 399 25 60 1.3 - Spec. No. : C976J3 Issued Date : 2014.09.15 Revised Date : Page No. : 3/9 pF VGS=0V, VDS=25V, f=1MHz Ω f=1MHz A V ns nC IF=20A, VGS=0V IF=20A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTA55N20J3 CYStek Product Specification Spec. No. : C976J3 Issued Date : 2014.09.15 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 80 10V,9V,8V,7V,6V,5V,4V,3V,2.5 70 BVDSS, Normalized Drain-Source Breakdown Voltage 1.2 ID, Drain Current (A) 60 VGS=2V 50 1 40 0.8 30 20 0.6 10 VGS=1.5V ID=250μA, VGS=0V 0.4 0 0 4 8 12 16 VDS, Drain-Source Voltage(V) -75 -50 -25 20 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1000 VGS=1.5V VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1.2 100 VGS=2V VGS=2.5V VGS=3V VGS=4.5V VGS=10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 200 3.2 ID=11A 2.8 160 VGS=10V, ID=11A 2.4 R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 120 2 1.6 80 1.2 0.8 40 RDS(ON) @Tj=25°C : 52mΩ typ. 0.4 0 0 MTA55N20J3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C976J3 Issued Date : 2014.09.15 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=160V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 1 VDS=15V 0.1 Ta=25°C Pulsed VDS=100V 8 6 4 2 ID=20A 0 0.01 0.001 0.01 0.1 1 ID, Drain Current(A) 0 10 20 40 60 80 100 Qg, Total Gate Charge(nC) 120 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 30 100 1ms 10 10ms 100ms 1s 1 DC TC=25°C, Tj=175°C VGS=10V, θJC=1.4°C/W Single Pulse 0.1 ID, Maximum Drain Current(A) 100μs RDSON Limited ID, Drain Current(A) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 25 20 15 10 5 VGS=10V, RθJC=1.4°C/W 0 0.01 0.1 \ MTA55N20J3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C976J3 Issued Date : 2014.09.15 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Power Derating Curve Typical Transfer Characteristics 120 60 ID, Drain Current(A) PD, Power Dissipation(W) VDS=15V 50 40 30 20 100 80 60 40 10 20 0 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 0 25 50 75 100 125 150 TC, Case Temperature(℃) 175 200 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.1 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=1.4°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTA55N20J3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C976J3 Issued Date : 2014.09.15 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTA55N20J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C976J3 Issued Date : 2014.09.15 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTA55N20J3 CYStek Product Specification Spec. No. : C976J3 Issued Date : 2014.09.15 Revised Date : Page No. : 9/9 CYStech Electronics Corp. TO-252 Dimension Marking: 4 A55 N20 Device Name Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTA55N20J3 CYStek Product Specification