Plastic-Encapsulate Transistors FEATURES CXT5551 (NPN) • Switching and amplification in high voltage Applications such as telephony • Low current(max. 600mA) • High voltage(max.180v) Marking: 5551 Maximum Ratings (Ta=25 Parameter unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 600 mA Collector Power dissipation PC 500 mW 1. BASE 2. COLLECTO Junction Temperature TJ Storage Temperature Tstg ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter Symbol SOT-89 3. EMITTER 150 -55to +150 unless otherwise specified) Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μ A,IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE=10 μ A,IC=0 6 V Collector cut-off current ICBO VCB=120V,IE=0 50 nA Emitter cut-off current IEBO VEB=4V,IC=0 50 nA hFE(1) VCE=5V,IC=1mA 80 hFE(2) VCE=5V,IC=10mA 80 hFE(3) VCE=5V,IC=50mA 30 VCE(sat) IC=10mA,IB=1mA 0.15 V VCE(sat) IC=50mA,IB=5mA 0.2 V VBE(sat) IC=10mA,IB=1mA 1 V VBE(sat) IC=50mA,IB=5mA 1 V DC current gain 300 Collector-emitter saturation voltage Base-emitter voltage Transition frequency fT VCE=10V,IC=10mA,f=100MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6 pF Noise figure NF VCE=5V,Ic=0.2mA, 8 dB 100 MHz f=10Hzto15.7KHZ,Rs=10Ω GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P1 Plastic-Encapsulate Transistors CXT5551 Typical Characteristics Static Characteristic 35 30 180uA (mA) VCE= 5V hFE 160uA 25 140uA 20 DC CURRENT GAIN IC COLLECTOR CURRENT hFE —— IC 300 COMMON EMITTER Ta=25℃ 200uA 120uA 100uA 15 80uA 60uA 10 Ta=100℃ 200 Ta=25℃ 100 40uA 5 IB=20uA 0 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 14 VCE 16 0 0.3 18 1 10 100 COLLECTOR CURRENT (V) IC VCEsat —— 1000 IC 500 (mA) IC β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) β=10 800 Ta=25℃ 600 Ta=100℃ 400 200 0.1 1 10 COLLECTOR CURRENT Cob / Cib 100 100 IC Ta=100℃ Ta=25℃ 10 0.1 300 VCB / VEB —— 10 fT 200 (MHz) Ta=25℃ —— 100 IC 300 (mA) IC 100 C TRANSITION FREQUENCY fT Cib (pF) 1 COLLECTOR CURRENT (mA) f=1MHz IE=0 / IC=0 CAPACITANCE 100 10 Cob 30 VCE=10V 1 1 20 10 REVERSE VOLTAGE Pc 0.6 COLLECTOR POWER DISSIPATION PC (W) Ta=25℃ 10 —— V (V) 1 30 10 COLLECTOR CURRENT IC (mA) Ta 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Page:P2-P2