IRF IRHM7054 Simple drive requirement Datasheet

PD - 90887G
IRHM7054
JANSR2N7394
60V, N-CHANNEL
REF: MIL-PRF-19500/603
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
®
™
RAD-Hard HEXFET TECHNOLOGY
Product Summary
Part Number
IRHM7054
IRHM3054
IRHM4054
IRHM8054
Radiation Level
100K Rads (Si)
300K Rads (Si)
500K Rads (Si)
1000K Rads (Si)
RDS(on)
0.027Ω
0.027Ω
0.027Ω
0.040Ω
ID
35A*
35A*
35A*
35A*
QPL Part Number
JANSR2N7394
JANSF2N7394
JANSG2N7394
JANSH2N7394
TO-254AA
International Rectifier’s RAD-HardTM HEXFET® technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ T C = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
35*
30
140
150
1.2
±20
500
35
15
3.5
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063 in.(1.6mm) from case for 10s)
9.3 (Typical)
C
g
*Current is limited by package
For footnotes refer to the last page
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1
05/15/06
IRHM7054, JANSR2N7394
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Drain-to-Source Breakdown Voltage
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
60
—
—
V
—
0.053
—
—
—
2.0
12
—
—
—
—
—
—
—
—
0.027
Ω
0.030
4.0
V
—
S( )
25
µA
250
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
200
60
75
27
100
75
75
—
V/°C
Ω
Parameter
BVDSS
nA
nC
ns
nH
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 30A Ã
VGS = 12V, ID = 35A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 30A Ã
VDS= 48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 35A
VDS = 30V
VDD =30V, ID = 35A
VGS =12V, RG = 2.35Ω
Measured from Drain lead (6mm /0.25in from
package) to Source lead (6mm /0.25in. from
Package) with Source wires internally
bonded from Source Pin to Drain Pad
C iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4100
2000
560
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
35*
140
1.4
280
2.2
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 35A, VGS = 0V Ã
Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs
VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max Units
—
—
—
— 0.83
—
48
0.21 —
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation
Characteristics
Pre-Irradiation
IRHM7054, JANSR2N7394
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 500K Rads(Si)1 1000K Rads (Si)2 Units
Min
Max
Min Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (TO-254AA)
Diode Forward Voltage Ã
Test Conditions
60
2.0
—
—
—
—
—
4.0
100
-100
25
0.027
60
1.25
—
—
—
—
—
4.5
100
-100
50
0.04
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
V GS = 20V
VGS = -20 V
VDS= 48V, VGS = 0V
VGS = 12V, ID = 30A
—
0.027
—
0.04
Ω
VGS = 12V, ID = 30A
—
1.4
1.4
V
VGS = 0V, IS = 35A
—
V
nA
1. Part numbers IRHM7054 (JANSR2N7394), IRHM3054 (JANSF2N7394), IRHM4054 (JANSG2N7394)
2. Part number IRHM8054 (JANSH2N7394)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
LET
(MeV/(mg/cm2))
36.8
59.9
Energy
(MeV)
305
345
Range
(µm)
39
32.8
VDS (V)
@VGS=0V @VGS=-5V @VGS=-10V
60
60
45
40
35
30
@VGS=-15V
40
25
@VGS=-20V
30
20
70
60
VDS
50
40
BR
I
30
20
10
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM7054, JANSR2N7394
1000
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
100
5.0V
20µs PULSE WIDTH
TJ = 25 °C
5.0V
10
1
10
10
100
1
VDS , Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
100
TJ = 150 ° C
V DS = 25V
20µs PULSE WIDTH
6
7
8
9
10
11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
100
Fig 2. Typical Output Characteristics
1000
5
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
20µs PULSE WIDTH
TJ = 150 °C
12
ID = 50A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
8000
IRHM7054, JANSR2N7394
6000
Ciss
4000
Coss
2000
Crss
0
1
10
ID = 35A
VDS = 48V
VDS = 30V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
VDS , Drain-to-Source Voltage (V)
80
120
160
200
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 25 ° C
100
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
40
TJ = 150 ° C
10
1
0.4
100
100us
1ms
10
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
V GS = 0 V
1.0
1.6
2.2
2.8
3.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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4.0
1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHM7054, JANSR2N7394
Pre-Irradiation
LIMITED BY PACKAGE
V GS
ID , Drain Current (A)
D.U.T.
RG
40
+
- VDD
VGS
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS
10
0
RD
VDS
50
90%
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
0.001
0.00001
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHM7054, JANSR2N7394
L
D.U.T
RG
IAS
VGS
20V
DRIVER
+
- VDD
0.01Ω
tp
TOP
1000
15V
VDS
EAS , Single Pulse Avalanche Energy (mJ)
1200
Fig 12a. Unclamped Inductive Test Circuit
A
BOTTOM
800
600
400
200
0
25
V(BR)DSS
ID
16A
22A
35A
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHM7054, JANSR2N7394
Pre-Irradiation
Foot Notes:
À Repetitive Rating; Pulse width limited by
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 0.9mH
Peak IL = 35A, VGS =12V
 I SD ≤ 35A, di/dt ≤ 150A/µs,
VDD ≤ 60V, TJ ≤ 150°C
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
48 volt VDS applied and V GS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-254AA
0.12 [.005]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
C
2
3
>@
>@
3X
3.81 [.150]
2X
>@
0$;
1.14 [.045]
0.89 [.035]
0.36 [.014]
3.81 [.150]
B A
127(6
1.
2.
3.
4.
B
13.84 [.545]
13.59 [.535]
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
CONTROLLING DIMENSION: INCH.
CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2006
8
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