Kexin BSS81B Npn silicon switching transistor Datasheet

Transistors
IC
SMD Type
NPN Silicon Switching Transistors
BSS79,BSS81
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Low collector-emitter saturation voltage.
1
0.55
High DC current gain: 0.1mA to 500 mA.
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
BSS79
BSS81
Unit
Collector-emitter voltage
Parameter
VCEO
40
35
V
Collector-base voltage
VCBO
Emitter-base voltage
75
V
VEBO
6
V
Collector current
IC
800
mA
Peak collector current
ICM
1
A
mA
IB
100
Peak base current
IBM
200
mA
Total power dissipation,TS = 77
Ptot
330
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
Junction - soldering point
RthJS
Base current
220
K/W
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1
Transistors
IC
SMD Type
BSS79,BSS81
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector-emitter breakdown voltage
BSS79
Testconditons
V(BR)CEO IC = 10 mA, IB = 0
BSS81
Min
Typ
40
Unit
V
35
Collector-base breakdown voltage
V(BR)CBO IC = 10 ìA, IE = 0
75
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10 ìA, IC = 0
6
V
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
BSS79/81B
VCB = 60 V, IE = 0
10
nA
VCB = 60 V, IE = 0 , TA = 150
10
ìA
VEB = 3 V, IC = 0
10
nA
IC = 100ìA, VCE = 10 V
35
BSS79/81B
25
BSS79/81B
DC current gain *
BSS79/81C
IC = 1 mA, VCE = 10 V
50
hFE
BSS79/81B
IC = 10 mA, VCE = 10 V
35
75
40
120
BSS79/81C
100
300
BSS79/81B
25
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
BSS79/82C
Collector-emitter saturation voltage *
Base-emitter saturation voltage
20
BSS79/81C
BSS79/81C
40
VCE(sat)
*
VBE(sat)
IC = 150 mA, IB = 15 mA
0.3
IC = 500 mA, IB = 50 mA
1.3
IC = 150 mA, IB = 15 mA
1.2
IC = 500 mA, IB = 50 mA
Transition frequency
fT
Collector-base capacitance
Ccb
IC = 20 mA, VCE = 20 V, f = 100 MHz
VCB = 10 V, f = 1 MHz
V
2.0
250
MHz
6
pF
Delay time
td
VCC = 30 V, IC = 150 mA, IB1 = 15
mA,VBE(off) = 0.5 V
10
ns
Rise time
tr
VCC = 30 V, IC = 150 mA, IB1 = 15
mA,VBE(off) = 0.5 V
25
ns
tstg
VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA
250
ns
tf
VCC = 30 V, IC = 150 mA, IB1=IB2 = 15mA
60
ns
Storage time
Fall time
* Pulse test: t
300ìs, D = 2%.
hFE Classification
BSS79
TYPE
Rank
B
C
Marking
CEs
CFs
BSS81
TYPE
2
Max
Rank
B
C
Marking
CDs
CGs
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