NCE Power NCE30H21 Nce n-channel enhancement mode power mosfet Datasheet

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NCE30H21
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NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE30H21 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =30V,ID =210A
RDS(ON) < 2.5mΩ @ VGS=10V (Typ:1mΩ)
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
●
Power switching application
●
Hard Switched and High Frequency Circuits
●
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE30H21
NCE30H21
TO-220
-
-
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
Unit
30
V
±20
V
ID
210
A
ID (100℃)
100
A
Pulsed Drain Current
IDM
1000
A
Maximum Power Dissipation
PD
230
W
1.5
W/℃
EAS
1800
mJ
TJ,TSTG
-55 To 175
℃
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
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Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
0.65
Min
Typ
℃/W
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
30
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
3
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=40A
1
2.5
mΩ
gFS
VDS=24V,ID=40A
On Characteristics (Note 3)
Forward Transconductance
2
160
S
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=25V,VGS=0V,
F=1.0MHz
8200
PF
3000
PF
280
PF
18
nS
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=15V,ID=40A
120
nS
td(off)
VGS=10V,RGEN=1.8Ω
50
nS
25
nS
210
nC
64
nC
40
nC
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=24V,ID=40A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=40A
Diode Forward Current (Note 2)
IS
Reverse Recovery Time
trr
TJ = 25°C, IF = 40A
Reverse Recovery Charge
Qrr
di/dt = 100A/μs(Note3)
Forward Turn-On Time
ton
0.85
1.2
V
40
A
80
120
nS
180
250
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=15V,VG=10V,L=1mH,Rg=25Ω
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NCE30H21
Test circuit
1)EAS test Circuits
2)Gate charge test Circuit:
3)Switch Time Test Circuit:
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ID- Drain Current (A)
Normalized On-Resistance
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-JunctionTemperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
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Figure 6 Source- Drain Diode Forward
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Normalized BVdss
C Capacitance (pF)
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TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 9
BVDSS vs Junction Temperature
ID- Drain Current (A)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Safe Operation Area
Figure 10
VGS(th) vs Junction Temperatur
r(t),Normalized Effective
Transient Thermal Impedance
Figure 8
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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TO-220-3L Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
4.470
4.670
0.176
0.184
A1
2.520
2.820
0.099
0.111
b
0.710
0.910
0.028
0.036
b1
1.170
1.370
0.046
0.054
c
0.330
0.650
0.013
0.026
c1
1.200
1.400
0.047
0.055
D
10.010
10.350
0.394
0.407
E
8.500
8.900
0.335
0.350
E1
12.060
12.460
0.475
0.491
2.540(TYP.)
e
0.100(TYP.)
e1
4.980
5.180
0.196
0.204
F
2.590
2.890
0.102
0.114
H
8.440 REF.
0.332 REF.
h
0.000
0.300
0.000
0.012
L
13.400
13.800
0.528
0.543
L1
3.560
3.960
0.140
0.156
V
6.360 REF.
0.250 REF.
I
6.300 REF.
0.248 REF.
Φ
3.735
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NCE30H21
ATTENTION:
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
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